核心素养视角下物理学史的价值体现——以“热力学第一定律”为例

把物理学史引入中学物理教学是培养学生物理学科核心素养的有效策略之一.热力学第一定律的发现涉及迈耶、焦耳、亥姆霍兹等相关历史人物,具有把物理学史融入到教学中的价值.分析教材内容呈现的局限性,展现较为完整的“热力学第一定律”的发展历史,并以此为例,结合课标的要求,分析其在培养学生学科核心素养的价值.     

圆柱壳大开孔问题——单圆孔的理论解

从Ｄｏｎｎｅｌｌ圆柱壳方程出发，利用复变函数与保角映射的方法，将圆柱壳展开面上的开孔边界线保角晨射成单位圆，并在映射平面上给出了逼近大开孔圆柱壳方程解答的完备函数逼近序列，进而利用边界条件和正交函数展开的方法得到了自由孔边应力集中系数的表达式，最后，对具有开孔率的圆柱壳在不同荷载条件下的自由孔口边界上的应力集中的系数进行了计算，此种方法，同时研究圆柱壳开非圆大孔和接管等问题提供了可能性。     

统计与概率的交汇综合

将抽样、频率分布直方图和茎叶图等统计知识与概率交汇综合命题，是考试热点，下面作一个归纳，供复习参考．     

曲线y=x~3的切线与曲线公共点的个数

曲线y=x3是我们比较熟悉的一种曲线,它的切线与曲线的公共点个数很有意思,除原点外,它在其他任一点处的切线都有两个公共点,其中一个公共点是切点,另一个公共点的横坐标是切点横坐标的-2倍,下面给出这个结论并给予证明.结论1除原点外,曲线y=f(x)=x3在     

基于法布里-珀罗标准具的532 nm多普勒测风激光雷达系统设计和分析

 设计了采用532 nm 种子注入稳频钇铝石榴石（YAG）激光器作为辐射源的基于四通道法布里-珀罗标准具的瑞利和米散射测风激光雷达系统。介绍了激光雷达的多普勒测量基本原理;给出了雷达系统的主要参数,重点对基于分子后向散射信号的外侧双通道标准具的带宽、自由谱间距、峰值间距等指标进行了详细设计与分析,确定了内侧双通道标准具参数;对全系统速度灵敏度、信噪比与探测距离的关系进行了理论模拟。结果表明,可以实现从边界层至对流层高低空一体化探测。     

Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.     

产能约束对闭环供应链回收渠道选择的影响

在制造商存在产能约束下,建立了再制造闭环供应链回收渠道决策的Stackelberg博弈模型,得出了三种回收渠道下的回收率、零售价以及制造商、零售商和供应链的利润,分析了制造商的生产能力对回收渠道决策的影响。研究表明:存在产能约束时,制造商回收渠道中的回收率总是最高的,这与无产能约束时零售商回收渠道中回收率最高的情况明显不同;同时,若废旧产品回收转移支付价格较低,制造商会选择自己回收,此时的零售价最低,制造商、零售商和供应链利润最高;若回收转移支付价格较高,制造商会选择零售商回收,此时的零售价最低,制造商和供应链利润最高。     

利用子域全息复杂度探测约化保真率性质

正20世纪70年代,贝肯斯坦与霍金发现黑洞熵正比于黑洞视界面积,这促使Susskind和t'Hooft提出了量子引力的一个一般性原理:一个引力系统的全部信息储存在其更低一维的表面,即全息原理。1997年,Maldacena从弦理论出发提出的反德西特