Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

Total ionizing dose responses of different transistor geometries after being irradiated by ~(60)Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator(PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor(nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect(RINCE).The analysis based on a charge sharing model and three-dimensional technology computer aided design(TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.     

一类三阶非线性分布时滞动力方程的振动结果

研究一类三阶非线性分布时滞动力方程的振动性,通过构造广义Riccati变换得到一类新的广义Riccati不等式,利用积分平均技巧等方法,建立了保证该方程一切解均振动或收敛于0的若干新的振动结果,推广和改进了近期文献的相关结论,并给出了若干例子。     

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.     

Research on the radiation hardened SOI devices with single-step Si ion implantation

Silicon-on-insulator(SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide.In this paper,an extra single-step Si ion implantation into buried oxide layer prior to the normal complementary metal–oxide–semiconductor transistor(CMOS) process is used to harden the SOI wafer.The top-Si quality of the hardened SOI wafer is confirmed to be good enough for device manufacturing through various characterization methods.The radiation experiments show that the total ionizing dose tolerance of the Si implanted SOI device is improved significantly.The metastable electron traps introduced by Si implantation is also investigated by electrical stress.The results show that these traps are very instable,and electrons will tunnel into or out of the metastable electron traps quickly after hot-electroninjection or hot-hole-injection.     

基于光纤的三维可调胶体光子晶体

用改进的垂直沉积法在光纤端面制备了高质量的SiO₂胶体光子晶体,经过烧结、固化构成胶体光子晶体-光纤结构. 用扫描电子显微镜确定了样品为面心立方密排结构,其密排面平行于光纤基底表面. 利用全光纤传感网络测试了该胶体光子晶体,反射峰中心位于845 nm处,与Bragg理论计算值符合很好. 将该样品浸入不同折射率的液体中,反射光谱的峰值位置随着液体折射率的改变而发生偏移,近似呈线性关系,实现了峰位可调. 对于不同浓度引起的液体折射率的变化,基于光纤的胶体光子晶体结构也能够很好地分辨出来. 关键词： 可调胶体光子晶体 2微球')" href="#">SiO₂微球 Bragg反射 光纤     

Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs

Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator(PDSOI)NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling(BBT) has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide(BOX) contributes a lot to the latchup effect.     

一类三阶非线性分布时滞动力方程的振动结果

研究一类三阶非线性分布时滞动力方程的振动性,通过构造广义Riccati变换得到一类新的广义Riccati不等式,利用积分平均技巧等方法,建立了保证该方程一切解均振动或收敛于0的若干新的振动结果,推广和改进了近期文献的相关结论,并给出了若干例子。