碳酸镧分离富集DNA的研究

通过紫外-可见分光光度法测定了碳酸镧吸附前后溶液中的DNA含量,并计算了DNA的吸附率.通过X射线光电子能谱(XPS)与X射线衍射(XRD)分析了吸附DNA前后固相的变化.结果表明,碳酸镧对DNA有较强的吸附作用,且该过程对碳酸镧晶型未产生明显影响.通过对吸附条件的考察,发现DNA的吸附率随pH值升高而降低.最后通过磷酸二氢钾作为洗脱液将吸附的DNA回收,洗脱液中镧离子含量低于0.1×10~(-6)mol/L,对DNA的后期使用无污染.     

非晶Nb-Ni合金晶化过程中紫外光电子能谱研究

本文利用紫外光电子能谱和X射线衍射测量研究了非晶Nb_100-xNi_x(x=65,59.8,56.4)合金晶化过程中价带谱的变化。对NbNi₃价带谱中出现的双峰进行了讨论。 关键词：     

156Tm核的高自旋态实验研究

利用122.5MeV的¹⁹F束流, 通过¹⁴²Nd(¹⁹F,5n)¹⁵⁶Tm熔合蒸发反应布居了¹⁵⁶Tm核的高自旋态, 测量了γ-γ符合及DCO比值, 建立了一个有29条能级, 33条γ跃迁的能级纲图. 新增加了20条γ跃迁, 18条能级. 将能级自旋推高到(34^－).     

一种高性能数字显微图像分析系统

给出了基于Windows操作系统的24位真彩色通用的高性能显微图像检测与分析软件系统，它采用先进的图像处理和形态分析算法，能对各种显微图像进行处理、分析和检测；并具有友好的操作界面、性能稳定等特点，可为材料、冶金、医药、生物、化工等相关领域的用户提供便捷的显微图像分析及处理测量工具。     

171Ta高自旋态能级寿命测量

在中国原子能科学研究院的HI 13串列加速器上通过157Gd(19F,5n)171Ta重离子熔合蒸发反应布居了171Ta的高自旋态,以多普勒移动衰减法的峰形分析法分析了171Tah9/2质子1/2[541]转动带的6条能级的寿命,得到了这6条能级的平均寿命值. The high spin states of~(171)Ta have been populated via heavy ion fusion evaporation reaction~(157)Gd(~(19)F, 5n)~(171)Ta at the HI-13 tandem accelerator in China Institute of Atomic Energy. The lifetimes of the high spin states in~(171)Ta have been measured by using the Doppler Shift Attenuation Method (DSAM). Six levels of its h_(9/2) proton 1/2\ band have been analyzed and their lifetimes have been deduced from the experimental data.     

Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.     

浮栅ROM器件辐射效应机理分析

分析了浮栅ROM器件的辐射效应机理，合理地解释了实验中观察到的现象.指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因.浮栅ROM器件的中子、质子和⁶⁰Co γ辐射效应都是总剂量效应 . 关键词： FLASH ROM EEPROM 中子 质子 60Co γ')" href="#">⁶⁰Co γ 总剂量效应     

p型导电掺In的SnO2薄膜的制备及表征

采用溶胶-凝胶提拉法成功地制备了p型导电掺In的SnO2薄膜.x射线衍射测试结果表明，掺In的SnO2薄膜保持SnO2的金红石结构.吸收谱测试结果表明，掺In的SnO2禁带宽度为3.8eV.霍尔测量结果表明，空穴浓度与热处理温度有很大的关系，525℃为最佳热处 理的温度.铟锡原子比在0.05—0.20范围内，空穴的浓度与In的含量有直接的关系，并随In含量的增加而增加. 关键词： SnO2 溶胶-凝胶法 p型导电     

The compensability between the longitudinal andtransverse mismachining tolerance of gratingin the optical pick-up head

In this paper numeric analysis is made to the influence of the longitudinal mismachining tolerance (LMT) and the transverse mismachining tolerance (TMT) of the grating in the optical pick-up head (GOPH) of VCD, DVD, and CD-ROM on the transmissivity and the intensity ratio of the auxiliary light beam to the main read-write light beam (IRAM) by using the general expression of diffraction efficiency obtained from the scalar diffraction theory. On solving GOPH problem, the scalar diffraction theory and the vector diffraction theory are coincident, and the scalar diffraction theory is reliable. The result shows that LMT and TMT can compensate for the inverse effect of IRAM, however, at the expense of reducing transmissivity. As far as GOPH is concerned, the goodness that LMT and TMT can be effectively compensated for is very advantageous in manufacturing of the grating.     

p型导电掺In的SnO_2薄膜的制备及表征

采用溶胶 凝胶提拉法成功地制备了p型导电掺In的SnO2 薄膜 .x射线衍射测试结果表明 ,掺In的SnO2 薄膜保持SnO2 的金红石结构 .吸收谱测试结果表明 ,掺In的SnO2 禁带宽度为 3 8eV .霍尔测量结果表明 ,空穴浓度与热处理温度有很大的关系 ,5 2 5℃为最佳热处理的温度 .铟锡原子比在 0 0 5— 0 2 0范围内 ,空穴的浓度与In的含量有直接的关系 ,并随In含量的增加而增加