Characterizations of Tb:Zn2SiO4 films on silicon wafer prepared by sol-gel dip-coating and solid-phase reaction

Terbium-doped Zn_2SiO_4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO_2. X-ray diffraction (XRD) and UV－Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn_2SiO_4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn_2SiO_4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.     

稳态平板法在热电器件热电转换效率测试中的应用

将稳态平板法测导热系数的实验应用于热电器件热电转换效率的测试,通过测量输入器件的传热速率和负载的输出电功获得热电器件的热电转换效率。研究发现,稳态平板法可以测量工作温度在室温到100℃范围内热电器件的热电转换效率。