p型导电掺In的SnO2薄膜的制备及表征

采用溶胶-凝胶提拉法成功地制备了p型导电掺In的SnO2薄膜.x射线衍射测试结果表明，掺In的SnO2薄膜保持SnO2的金红石结构.吸收谱测试结果表明，掺In的SnO2禁带宽度为3.8eV.霍尔测量结果表明，空穴浓度与热处理温度有很大的关系，525℃为最佳热处 理的温度.铟锡原子比在0.05—0.20范围内，空穴的浓度与In的含量有直接的关系，并随In含量的增加而增加. 关键词： SnO2 溶胶-凝胶法 p型导电

Preparation and characterization of In-doped p-type SnO2 thin films by sol-gel dip-coating

In doped SnO2 thin films were prepared on quartz substrates by sol-gel dipcoating technique.X-ray diffraction results show that In doped SnO2 films a re of rutile structure.Ultraviolet-visible absorption results show that In_do ped SnO2 films have an optical band gap of about 3.8eV. Hall effect measur ement results show that the hole concentration and the mobility are dependent on both the processing temperature and the In/Sn atomic ratio. It is found that 5.25℃ is the optimum processing temperature to get the highest hole concentration . For an In/Sn atomic ratio between 0.05 and 0.20, hole concentration is almo st proportional to the In/Sn ratio.