共查询到20条相似文献,搜索用时 171 毫秒
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采用溶胶-凝胶法在n型Si(100)衬底上沉积Li-N双掺杂ZnO薄膜,经X射线衍射和扫描电镜图片分析,所制备薄膜具有多晶纤锌矿结构和高的c轴择优取向.室温下霍尔效应测试结果显示Li-N双掺杂ZnO薄膜具有p型导电特性.在Li掺杂量为15.0at%,Li/N(摩尔比)为1∶1,700℃退火等优化条件下得到的最佳电学性能结果是:电阻率为0.34 Ω·cm,霍尔迁移率为16.43 cm2/V·s,载流子浓度为2.79×1019 cm-3关键词:
Li-N双掺
p型ZnO薄膜
溶胶-凝胶
性能 相似文献
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采用密度泛函理论研究了Ⅲ族元素掺杂对SnO2电子结构及电学性能的影响.态密度分析结果表明,以替代位存在的Ⅲ族杂质均使SnO2的费米能级明显向低能态方向移动,使得价带顶不完全填满,因此在SnO2中均充当受主作用.部分态密度分析结果表明,相对于掺Al的SnO2,Ⅲ族元素中的Ga及In对费米能级附近态密度贡献较大,其主要贡献来自Ga3d态或In4d态,这预示着在SnO2中掺Ga或In能实现更好的p型掺杂效果.电离能计算结果进一步表明,在Al,Ga及In三种元素中,替位In有最小的电离能(0.06 eV),这说明其在SnO2中能形成最浅的受主能级,因而在同等掺杂情况下,可引入最高浓度的空穴,从而实现最佳的p型掺杂效果. 相似文献
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紫外光下纳米TiO2薄膜亲水性机理的电化学研究 总被引:6,自引:0,他引:6
利用溶胶 凝胶方法在透明导电玻璃ITO (SnO2 ∶In)表面制备纳米TiO2 薄膜 ,XRD谱图表明TiO2 是锐钛矿晶型 ,AFM (Atomic Force Microscope)测得薄膜表面粒子约为 10 0nm .研究了ITO表面纳米TiO2 薄膜的光致亲水性变化 .通过循环伏安技术测定TiO2 薄膜电极在 2 5 3.7nm的紫外光照射后的电化学行为推测光致亲水性机理 .发现在紫外光照射一定时间后 ,TiO2 薄膜电极的循环伏安图在 +0 .0 35V处出现新的氧化峰 ;且随光照时间的增加 ,氧化峰的峰电流增大 ,溶液中的溶解氧对峰电流的大小有明显影响 .实验表明 ,在紫外光照下电极表面有Ti3 + 产生 ,证实了TiO2 薄膜的光致亲水性转变过程与Ti3 + 的生成导致的表面结构变化有关 相似文献
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由于普通的化学气相沉积法制作高掺Sn的二氧化硅薄膜比较容易产生结晶,而溶胶-凝胶法制备薄膜化学组成比较容易控制,可以制作出掺Sn浓度较大的材料。文章采用了溶胶-凝胶的方法制备出了66 mol%和75 mol%两种不同浓度的掺Sn的SiO2薄膜,用浸渍法多次提拉薄膜以增加薄膜的厚度,之后用紫外-可见分光光度计测量了薄膜的透射光谱。之前基于透射光谱的方法计算玻璃基底上薄膜的光学参数都是针对单面薄膜,该文针对浸渍法产生的双面薄膜,建立了相对应的薄膜模型,并分别用包络线法计算出了两种不同薄膜样品的光学参数。计算结果表明两种不同薄膜样品的折射率随着波长的增加而增加,薄膜的厚度都为900 nm左右。 相似文献
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In this paper we present the results of the XPS atomic depth profile analysis, using ion beam sputtering, of L-CVD SnO2 thin films grown on an atomically clean SiO2 substrate after annealing at 400 °C in dry atmospheric air. From the evolution of the Sn 3d5/2, O 1s, Si 2p and C 1s core level peaks our experiments allowed the determination of the in depth atomic concentration of the main components of the SnO2/SiO2 interface. Thin (few nm) nearly stoichiometric SnO2 films are present at the topmost layer of the thin films, and progressive intermixing with SnO and silicon oxide is observed at deeper layer. The interface between the Sn and the Si oxide layers (i.e. the effective Sn oxide thickness) is measured at 13 nm. 相似文献
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实验研究表明,SnO2薄膜经过退火处理后其光致发光谱有明显的变化。在氧和氮两种不同气氛中进行热处理,其变化也有差异。这种变化主要是由于SnO2膜中氧空位和自由载流于浓度变化所致。 相似文献
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采用化学气相沉积方法, 利用Sb2O3/SnO作为源材料, 在蓝宝石衬底上制备出不同Sb掺杂量的SnO2薄膜, 并在此基础上制作出p-SnO2:Sb/n-SnO2同质p-n 结器件. 研究表明, 随着Sb含量的增加, 样品表面变得平滑, 晶粒尺寸逐渐增大, 且晶体质量有所改善, 发现少量Sb的掺入可以起到表面活化剂的作用. Hall测量结果证实适量Sb的掺杂可以使SnO2呈现p型导电特性, 当Sb2O3/SnO的质量比为1:5时, 其电学参数为最佳值. 此外, p-SnO2:Sb/n-SnO2同质p-n结器件展现出良好的整流特性, 其正向开启电压为3.4 V. 相似文献
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本文基于第一性原理方法研究了Y,Zr,Nb在Sn位掺杂SnO_2的键长变化、稳定性、能带结构以及态密度.结果表明:Y,Zr,Nb在Sn位掺杂SnO_2使附近的键长发生改变,改变量最大是Y掺杂SnO_2体系;掺杂体系的杂质替换能都为负值,表明体系为稳定结构;掺杂使SnO_2能级增多,能较好的调节带隙值;而Y掺杂SnO_2体系价带顶端有一条能级越过了费米线表明该体系呈现出半导体的特征;同时,Y,Zr,Nb掺杂SnO_2使导带底端的能级出现分离;在低能区的态密度仍主要由Sn、O的s轨道贡献;在高能区态密度的掺杂体系出现sp杂化的现象; Zr掺杂SnO_2的态密度能量向低能区移动. 相似文献
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In this work we perform an ab initio study of the electric field gradient (EFG) at the nucleus of Fe impurities in crystalline SnO. The Augmented Plane Waves plus Local Orbitals method is used to obtain the electronic structure of the doped system and the atomic relaxations introduced by the impurities in the SnO host in a fully self-consistent way. Most calculations are performed assuming that Fe ions replace the Sn atoms of the structure, in some cases including oxygen vacancies in order to discuss their role in the hyperfine interactions and in determining the local structure around Fe impurities. The case of interstitial Fe sites is also considered. Our predictions are compared with available Müssbauer spectroscopy results and also with theoretical and experimental results obtained for rutile SnO2 and TiO2. 相似文献
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Pure and Sn, Ni doped ZnO thin films were deposited on glass substrates using a novel successive ionic layer adsorption and reaction (SILAR) method at room temperature. Microstructures of the deposited films were optimized by adjusting growth parameters. The variation in resistivity of the ZnO film sensors was performed with rapid photothermal processing (RPP). The effect of rapid photothermal processing was found to have an important role in ZnO based sensor sensitivity to NO2, NH3. While the undoped ZnO film surface exhibited higher NH3 sensitivity than that of NO2, an enhanced NO2 sensitivity was noticed for the ZnO films doped with Sn and higher NH3 sensitivity was obtained by Ni doping. 相似文献
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119Sn Mossbauer spectra for surface layers of thin film Sb doped SnO were obtained by CEMS method, the emissive internal conversion
electrons were detected by multi-wire chamber. In practice the gas-sensing response of these films for H2, CO depended on Sb concentration of doping (X%) and the annealling processes. It was found that the CEMS parameters of samples-(IS),
(QS) and its distribution (HW), reach minima when x=1%, just in agreement with the gas-sensing responsive sensitivity reaching
maximum. And then it is helpful for the study of the gas-sensitive mechanism. 相似文献
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采用溶胶-凝胶旋涂法在玻璃衬底上制备了Co,Sn掺杂ZnO系列薄膜.通过金相显微镜和X射线衍射(XRD)研究了Co与Sn掺杂对薄膜的表面形貌和微结构的影响.XRD结果表明,所有ZnO薄膜样品都存在(002)择优取向,特别Sn单掺ZnO薄膜的c轴择优取向最为显著,而且晶粒尺寸最大.XPS测试表明样品中Co和Sn的价态分别为2+和4+,证实Co2+,Sn4+进入了ZnO的晶格.室温光致发光谱(PL)显示在所有的样品中都有较强的蓝光双峰发射和较弱的绿光发
关键词:
ZnO薄膜
溶胶-凝胶
掺杂
光致发光 相似文献
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本文研究了Cd2SnO4薄膜光致发光的某些性质.Cd2SnO4膜是利用Cd-Sn合金靶在Ar+O2气氛中反应溅射而成的.实验研究表明,Cd2SnO4膜的发光峰值随着氧浓度的增加移向长波方向.这是因为氧浓度的增加,减少了膜中的氧空位,导致了导带中电子浓度的减小,致使Burstein-Moss效应和电子散射作用相对减弱,从而改变了带隙宽度. 相似文献