Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n~+-layer

A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n +-layer silicon-on-insulator (PBN SOI) is proposed in this paper.Based on the proposed expressions of the vertical interface electric field,the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I),resulting in a high breakdown voltage (BV) for the device.For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 μm),the E I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI,respectively.     

探讨维生素B12研究史中的思政元素

维生素B₁₂的研究史蕴含了丰富的思政元素。本文通过探究维生素B₁₂的发现、治疗恶性贫血机理、结构测定、人工合成、生物合成中的关键人物、事件，凝练出弘扬中医药学、用科学造福人类、团队合作、持之以恒、创新精神等五大思政元素，以期为相关专业课程中课程思政的开展带来有益的启迪。     

是平均速度还是瞬时速度

【争论的焦点】教育科学出版社出版的《普通高中课程标准实验教科书物理·必修1》(2005年11月第1版)第14页中“练习与评价”的第2题第2小问,问题是这样的:下列所说的速度中,哪些是平均速度?哪些是瞬时速度?(2)列车提速后的速度达到250 km/h.对于这个问题,笔者每次教到高一,与备课组的老师都会进行争论,有的老师认为是平均速度,有的认为是瞬时速度,教育科学出版社出版的《物理教师教学用书必修1》第13页给出的答案是:平均速度.     

多分量方位远探测声波测井的理论与应用

基于线性拟合的利用岩石动态模量预测静态模量方法存在经验性强且精度不准的问题,利用实验测量的岩石纵波速度、孔隙度和体密度作为输入参数,基于多基因遗传规划方法,不断进化模型得到静态模量关于三个参数的解析表达式,对储层砂岩的静态模量进行了预测。结果表明,多基因遗传规划方法得到的模量表达式更为精确,此外,由于多基因遗传规划方法中横波速度不必要作为计算过程中的输入参数,因此避免了横波速度测量不准确或缺失而带来的静态模量计算误差。     

基于FPGA的DBF多波束中频接收系统的设计与实现

数字波束形成(DBF)阵列能够充分利用阵列天线所获取的空间信息,通过信号处理技术使波束获得超分辨率和低旁瓣的性能,它由天线阵元、射频下变频模块、AD采样、中频接收系统及上位机控制器组成。对中频接收系统进行数字波束形成的具体方案进行讨论,对多路接收和AD量化一致性造成的各通道间失配提出了幅相校正的解决方案,详细分析了研制中的关键技术。实验结果表明所设计的DBF多波束中频接收系统可有效实现通道间失配的校正,并实现精确的波束赋形功能。     

尿样中克仑特罗免疫亲和色谱-气/质联用检测方法的研究

以单抗为配基制备克仑特罗免疫亲和柱,建立了简单、快速、特异的样品净化技术,柱容量达到100 ng。偶联抗体量与柱容量呈线性关系,线性方程为:y=236.36x 6.6214,R2=0.9461。测定尿样中的克仑特罗,不需前处理直接用亲和柱提纯后以气质联用(GC/MS)方法检测。空白猪尿添加浓度为205、01、00 ng时,回收率分别为85%±1.3,85.9%±1.3,81.5%±2.7。同时以NY/XQ421-2003标准中净化方法为对照,回收率分别为113%±5.6,94.5%±10,78.6%±1.7,偶联非特异抗体的对照组亲和柱对样品保留值为7.03%。数据显示:免疫亲和柱作为提纯方法,与传统固相萃取提纯方法相比平行性好,提纯后样本杂质少。因此免疫亲和柱是净化样品的一个有效方法。     

纳米金/丝素复合膜修饰电极制备及对对苯二酚的电催化作用

将丝素还原HAuCl4制备的纳米金/丝素溶胶修饰在金电极表面制备了纳米金/丝素复合膜修饰电极,用于对苯二酚的催化氧化。实验表明,该修饰电极具有很好的电化学性能,在pH3.55磷酸盐缓冲溶液中以该修饰电极对对苯二酚进行检测,对苯二酚在4.0×10-6~1.0×10-4mol/L浓度范围内,其氧化峰电流与浓度呈良好的线性关系,其线性回归方程为i(μA)=0.2614 5.3539c,r=0.9995;检出限为2.0×10-7mol/L,灵敏度良好,用于实际样品分析,结果令人满意。     

Neutron Spectroscopy Evidence for a Possible Magnetic-Field-Induced Gapless Quantum-Spin-Liquid Phase in a Kitaev Material α-RuCl3

As one of the most promising Kitaev quantum-spin-liquid（QSL） candidates,α-RuCl₃ has received a great deal of attention.However,its ground state exhibits a long-range zigzag magnetic order,which defies the QSL phase.Nevertheless,the magnetic order is fragile and can be completely suppressed by applying an external magnetic field.Here,we explore the evolution of magnetic excitations of α-RuCl₃ under an in-plane magnetic field,by carrying out inelastic neutron scattering measu...     

A novel high performance TFS SJ IGBT with a buried oxide layer

A novel high performance trench field stop(TFS) superjunction(SJ) insulated gate bipolar transistor(IGBT) with a buried oxide(BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT(Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop(Vce(on)) and an improved tradeoff between Vce(on)and turn-off loss(Eoff), with no breakdown voltage(BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 1015cm-3, the Vce(on)and Eoffof the proposed structure are 1.08 V and 2.81 mJ/cm2with the collector doping concentration Nc = 1×1018cm-3and 1.12 V and1.73 mJ/cm2with Nc = 5 × 1017cm-3, respectively. However, with the same device parameters, the Vce(on)and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ/cm2with Nc = 1 × 1018cm-3and 1.98 V and 2.82 mJ/cm2with Nc = 5 × 1017cm-3,respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.     

A low specific on-resistance SOI LDMOS with a novel junction field plate

A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer （BOX） and thus widens the vertical conduction area. As a result, the breakdown voltage （BV） is improved and the specific on-resistance （Ron,sp） is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices.