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51.
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In this paper, we characterize when the Toeplitz operator Tf and the Hankel operator Hg commute on the Hardy space of the bidisk. For certain types of bounded symbols f and g, we give a necessary and sufficient condition on the symbols to guarantee TfHg = HgTf. 相似文献
53.
结合机械合金化与放电等离子烧结工艺制备了Ni和Se共掺的细晶方钴矿化合物Co1-xNixSb3-ySey,研究了晶界和点缺陷的耦合散射效应对CoSb3热电输运特性的影响.通过Ni掺杂优化载流子浓度提高功率因子.在x=0.1时,功率因子达到最大值1750μWm-1K-2(450℃),是没有掺Ni试样的两倍.晶界和点缺陷的耦合散射机理使晶格热导率急剧下降,其中Co0.9Ni0.1Sb2.85Se0.15的室温晶格热导率降低至1.67Wm-1K-1,接近目前单填充效应所能达到的最低值1.6Wm-1K-1,其热电优值ZT在450℃时达到最大值0.53.将Callaway-Von Baeyer点缺陷散射模型嵌入到Nan-Birringer有效介质理论模型,对晶界散射和点缺陷散射的耦合效应对热导率的影响进行了定量分析,模型计算与实验结果符合.理论模型计算表明,当晶粒尺寸下降到50nm同时掺杂引入点缺陷散射后,Co0.9Ni0.1Sb2.85Se0.15的晶格热导率下降到0.8Wm-1K-1.
关键词:
3')" href="#">CoSb3
Ni和Se掺杂
热电性能
耦合散射效应 相似文献
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55.
Mass Fraction of 13C-Pocket in Metal-Poor AGB Stars and the Primary Nature of Neutron Source 下载免费PDF全文
Chemical abundances of very metal-poor s-rich stars contain excellent information to set new constraints on models of neutron-capture processes at low metallicity. Using the parametric approach based on the radiative s-process nucleosynthesis model, we obtain the mass fraction q of 13 C-pocket, the overlap factor r, the neutron exposure per interpulse △τ, and the component coefficients of the s-process and the r-process for 25 s-rich stars, respectively. We find that q deduced for the lead stars is comparable to the overlap factor r, which is larger than the standard case (hereafter ST case) of the AGB model (q - 0.05) about 10 times, and AT are about 10 times smaller than the ST case (AT = 7.0 mbarn^-1). Although the two parameters obtained for the lead stars are very different from the ST case of the AGB stellar model, it is worth noting that the total amounts of 13 C in metal-poor condition are close to the ST case. The above relation is a significant evidence for the primary nature of the neutron source and the lead stars could be polluted by low-mass AGB stars. Because interpulse period declines with increasing stellar mass, for high-mass AGB star, the neutron irradiation may be terminated due to their shorter interpulse period. Thus the neutron exposure per interpulse of the larger AGB stars should be about 10 times smaller than the ST case. In this ease, the primary nature of the neutron source also exists. 相似文献
56.
分别采用量子阱模型和量子点模型对蓝色InGaN/GaN多量子阱发光二极管电学和光学特性进行模拟,并和实验测量结果进行了比对,结果发现,量子点模型的引入,很好地解决了I-V和电致发光二方面的实验与理论模型间符合程度不好的问题.同时,在I-V曲线特性模拟中发现,在量子点理论模型的基础上,只有考虑到载流子的非平衡量子传输效应,才能得到和实验相接近的I-V曲线,揭示着在InGaN/GaN 多量子阱发光二极管电输运特性中,载流子的非
关键词:
InGaN/GaN
发光二极管
数值模拟
量子点模型 相似文献
57.
Nano metal-particle dispersed glasses are the attractive candidates for nonlinear optical material applications.Au/SiO 2 nano-composite thin films with 3 vol% to 65 vol% Au are prepared by inductively coupled plasma sputtering.Au particles as perfect spheres with diameters between 10 nm and 30 nm are uniformly dispersed in the SiO 2 matrix.Optical absorption peaks due to the surface plasmon resonance of Au particles are observed.The absorption property is enhanced with the increase of Au content,showing a maximum value in the films with 37 vol% Au.The absorption curves of the Au/SiO 2 thin films with 3 vol% to 37 vol% Au accord well with the theoretical optical absorption spectra obtained from Mie resonance theory.Increasing Au content over 37 vol% results in the partial connection of Au particles,whereby the intensity of the absorption peak is weakened and ultimately replaced by the optical absorption of the bulk.The band gap decreases with Au content increasing from 3 vol% to 37 vol % but increases as Au content further increases. 相似文献
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New Power Lateral Double Diffused Metal-Oxide-Semiconductor Transistor with a Folded Accumulation Layer 下载免费PDF全文
A new lateral double diffused metal oxide semiconductor field effect transistor with a double-charge accumulation layer using a folded silicon substrate is proposed to improve the performance of the breakdown voltage and specific on-resistance. Three kinds of technologies, which are the additional electric field modulation effect, majority carrier accumulation and increasing the effective conduction area, are applied simultaneously by a semi- insulating polycrystalline silicon layer deposited over the top of thin oxide covering the drift region. It is indicated that by the simulator, the ideal silicon limits of the breakdown voltage and specific on-resistance have been broken due to the complete three-dimensional reduced surface field effect and the doubled majority carrier accumulation layer. 相似文献