金红石/锐钛矿混晶结构的TiO2薄膜光催化活性

采用磁控溅射法制备出一组金红石/锐钛矿混晶结构的纳米TiO2薄膜催化剂,并通过光催化降解苯酚实验考察该薄膜的催化性能.光催化实验证明,随着催化剂中金红石含量减少,催化剂的光催化活性逐渐提高.X射线衍射(XRD)、X射线光电子能谱(XPS)、表面光电压谱(SPS)和原子力显微镜(AFM)结果表明,催化剂为金红石和锐钛矿混晶结构,并随着金红石含量减少,催化剂的表面羟基(OH)和桥氧(-O-)的含量逐渐增加,而且费米能级逐渐提高.表面羟基和桥氧是有利于光催化的"活性物种";费米能级的提高使TiO2/H2O界面处TiO2的表面带弯增大,导致了价带光生空穴参加光催化反应的几率增大,有效地促进了光生载流子的分离;这些因素是催化剂光催化活性逐渐提高的主要原因.     

316L不锈钢基体上磁控溅射Er2O3／Er涂层的后处理研究

采用磁控溅射的方法在316L不锈钢表面制备了氧化铒涂层.选用金属铒作为过渡层,研究了不同热处理温度对涂层相组成、表面形貌以及涂层与基底结合情况的影响.XRD,SEM及膜基结合力分析结果表明,带有过渡层的氧化铒涂层表面致密、均匀,退火处理使氧化铒结晶性能提高,经过800℃热处理,生成了金属间化合物ErFe3提高了涂层与基底的结合强度.绝缘电阻率测试结果表明.Er2O3涂层绝缘电阻率在1×1013～1×1015Ω·cm,绝缘性能良好.     

高度有序氧化钨纳米棒的制备和表征

采用直流磁控溅射法结合阳极氧化法在铝基纳米点阵上制备氧化钨(WO3)纳米棒. 运用原子力学显微镜(AFM), 电子扫描显微镜(SEM), X射线衍射仪(XRD), 电化学工作站(EW)和紫外-可见分光光度计(UV)观察表征了WO3纳米棒的表面形貌、结构、光学性能和电致变色性能. 结果表明: 在溅射过程中, 溅射粒子优先沉积于铝基纳米点阵的凸点上, 然后成核并形成棒状; WO3纳米棒的直径约为200 nm, 与铝基纳米点阵的直径一致, 拥有一定的电致变色性能.     

反应磁控溅射法制备的氮掺杂TiO2光催化膜的氮化学态和光催化活性

 采用中频交流磁控溅射法,以O2/N2混和气为反应气体,在铝片上沉积了氮掺杂TiO2膜. 利用原子力显微镜、紫外-可见光谱、X射线衍射和X射线光电子能谱等手段研究了掺杂膜的表面形貌、光吸收性能、物相组成以及膜样品中氮的化学态,并通过苯甲酰胺的光催化降解实验对光催化剂活性进行了评价. 结果表明,所得掺杂膜仅能够被紫外光所激发,反应气的配比对膜的形貌和TiO2的锐钛矿/金红石相比率均有影响,而氮在膜中以掺杂N3-、表面吸附N2和固溶N2的形式存在. 随着N3-掺入量的增加,掺杂膜的光催化活性显著提高,在反应气体组成为N2/(O2+N2)=80%(体积分数)时,掺杂N3-量为0.594%,苯甲酰胺光催化降解效果最好,其活性约为纯TiO2膜的1.5倍.     

基于PEM的反应磁控溅射镀膜机参数监控系统

实时在线监测磁控溅射反应气体的参数可有效保证镀膜质量;针对反应磁控溅射离子镀膜机反应气体的功能需求,分析了反应气体的控制原理,基于PEM方法提出了控制器方案和反应气体的参数监控方案,分析了监控系统的功能需求,自定义了串口通信协议,基于LabVIEW和串口设计了反应气体的参数监控系统系统,并与设计的控制器用于镀膜工艺试验;试验结果表明,基于PEM方法设计的反应气体参数监控系统功能正确,可为控制器和镀膜机提供参数调控依据,为提高硬质镀膜质量提供了一套有效的监控方法。     

高择优取向Mo薄膜的直流磁控溅射制备及其电学性能

使用直流磁控溅射法在玻璃基底上沉积Mo薄膜,采用X射线衍射仪、原子力显微镜和四探针测试系统研究了溅射工艺对Mo薄膜的结构、形貌和电学性能的影响.结果表明:当基片温度为150 ℃时,薄膜获得(211)晶面择优取向生长,而在低于250 ℃的其它温度条件下,样品则表现为(110)晶面择优取向生长.进一步的表面形貌分析显示:薄膜的粗糙度随基片温度变化不明显,其值大约为0.35 nm,随溅射功率密度的增大而变大|电学性能方面:随着溅射功率密度的升高,薄膜导电性能迅速增强,电阻率呈现近似指数函数衰减|随着基底温度的升高,薄膜的电阻率先减小后增大,当基底温度为150 ℃时,薄膜电阻率降低至最小值2.02×10-5 Ω·cm.     

Crystallization Kinetics Study on Magnetron-Sputtered Amorphous TiA1 Alloy Thin Films

Crystallization kinetics of magnetron-sputtered amorphous TiAl ahoy thin films is investigated by differential scanning calorimetry through isothermal analysis and non-isotherm analysis. In non-isothermai analysis, the Kissinger method and the Ozawa method are used to calculate the apparent activation energy and local activation energy, respectively, in the crystallization processes of amorphous TiA1 thin films. Furthermore, the crystallization mechanism is discussed from the investigation of the A vrami exponent by isothermal analysis. In addition, x-ray diffraction is utilized to reveal the grain orientation and evolution during the crystallization of TiA1 thin fihns.     

Surface Plasmon Resonance and Raman Scattering Activity of the Au/AgxO/Ag Multilayer Film

The nanostructured Au/AgxO/Ag sandwich multilayer films on quartz substrates are prepared by the magnetron sputtering method. The morphology, plasmon resonance and surface enhanced Raman scattering （SERS） activi- ties of the multilayer films are studied. The resonant absorption wavelength of localized surface plasmon is tuned in a wide range from 618nm to 993nm by controlling the density of nanoparticles of Au and Ag. The SERS activity of the Au/AgxO/Ag multilayer films are enhanced over -10 times compared with those of bare Ag and bare Au films. These properties may find a potential application in biosensor and bioimaging.     

磁控溅射制备铬薄膜的结构和光电学性质

用直流磁控溅射技术在石英基片上制备不同厚度(5 nm~114 nm之间)的铬膜.使用X射线衍射仪和分光光度计分别检测薄膜的结构和光学性质,利用德鲁特模型和薄膜的透射、反射光谱计算铬膜的厚度和光学常量,并采用Van der Pauw方法测量薄膜电学性质.结果表明:制备的铬薄膜为体心立方的多晶态,随着膜厚的增加,薄膜的结晶性能提高,晶粒尺寸增大;在可见光区域,当膜厚小于32 nm时,随着膜厚的增加,折射率快速减小,消光系数快速增大,当膜厚大于32 nm时,折射率和消光系数均缓慢减小并逐渐趋于稳定;薄膜电阻率随膜厚的增加为一次指数衰减.     

Sputtering pressure influence on growth morphology,surface roughness,and electrical resistivity for strong anisotropy beryllium film

The strong anisotropy beryllium （Be） films are fabricated at different sputtering pressures by direct current magnetron sputtering. With the increase of pressure, the deposition rate of Be film first increases, and when the pressure exceeds 0.8 Pa, it gradually descends. The X-ray diffraction analysis indicates that Be film is of α-Be phase, its surface always reveals the （101） crystal plane possessing the low surface energy. As for the growth morphology of Be film, the surface is mainly characterized by the fibrous grains, while the cross section shows a transition from a columnar grain to a mixed grain consisting of a cone-shaped grain and a columnar grain as the sputtering pressure increases. The large grain fraction decays exponentially from 75.0% to 59.3% with the increase of sputtering pressure p, which can improve the grain size uniformity. The surface roughness increases due to the insufficient atom diffusion, which is comparable to its decrease due to the etching effect at p 〈 0.8 Pa, while it increases drastically at p 〉 0.8 Pa, and this increase is dominated by the atom diffusion. The electrical resistivity values of Be films range from 1.7 μΩ m to 2.7 μΩ m in the range 0.4 Pa-1.2 Pa, which is 50 times larger than the bulk resistivity.