高择优取向Mo薄膜的直流磁控溅射制备及其电学性能

使用直流磁控溅射法在玻璃基底上沉积Mo薄膜,采用X射线衍射仪、原子力显微镜和四探针测试系统研究了溅射工艺对Mo薄膜的结构、形貌和电学性能的影响.结果表明:当基片温度为150 ℃时,薄膜获得(211)晶面择优取向生长,而在低于250 ℃的其它温度条件下,样品则表现为(110)晶面择优取向生长.进一步的表面形貌分析显示:薄膜的粗糙度随基片温度变化不明显,其值大约为0.35 nm,随溅射功率密度的增大而变大|电学性能方面:随着溅射功率密度的升高,薄膜导电性能迅速增强,电阻率呈现近似指数函数衰减|随着基底温度的升高,薄膜的电阻率先减小后增大,当基底温度为150 ℃时,薄膜电阻率降低至最小值2.02×10-5 Ω·cm.

Fabrication and Electrical Properties of Highly Preferred OrientationMo Thin Film by DC Magnetron Sputtering

Mo thin film was prepared on glass substrate by DC magnetron sputtering method.Effects of the craft on the structure,morphology and electrical performance of Mo thin film were studied by X-ray Diffraction Analysis,Atomic Force Microscope and Four-point Probe System,respectively.It was found that the Mo thin film was grown with (211) preferred orientation at 150℃,and (110) preferred orientation in other temperature conditions.The roughness of the sample did not change significantly with the increase of substrate temperature,which is about 0.35 nm,but increased with the increase of sputtering power density.On the other hand,the resistivity of the thin film decreased in an almost exponential decay with the increase of sputtering power density,and decreased and then increased with the increase of substrate temperature.Moreover it was reduced to the minimum of 2.02 × 10-5Ω·cm at 150 ℃.