Neutron beam optimization based on a ^7Li（p,n）^7Be reaction for treatment of deep-seated brain tumors by BNCT

Neutron beam optimization for accelerator-based Boron Neutron Capture Therapy（BNCT） is investigated using a ^7Li（p,n）^7Be reaction. Design and optimization have been carried out for the target, cooling system,moderator, filter, reflector, and collimator to achieve a high flux of epithermal neutron and satisfy the IAEA criteria.Also, the performance of the designed beam in tissue is assessed by using a simulated Snyder head phantom. The results show that the optimization of the collimator and reflector is critical to finding the best neutron beam based on the ^7Li（p,n）^7Be reaction. Our designed beam has 2.49×109n/cm^2 s epithermal neutron flux and is suitable for BNCT of deep-seated brain tumors.     

Analyses of temperature-dependent interface states,series resistances,and AC electrical conductivities of Al/p Si and Al/Bi_4Ti_3O_(12)/p Si structures by using the admittance spectroscopy method

In this study, Al/p-Si and Al/Bi4Ti3O12/p-Si structures are fabricated and their interface states （Nss）, the values of series resistance （Rs）, and AC electrical conductivity （σac） are obtained each as a function of temperature using admit- tance spectroscopy method which includes capacitance-voltage （C-V） and conductance-voltage （G-V） measurements. In addition, the effect of interfacial Bi4Ti3012 （BTO） layer on the performance of the structure is investigated. The voltage- dependent profiles of Nss and Rs are obtained from the high-low frequency capacitance method and the Nicollian method, respectively. Experimental results show that Nss and Rs, as strong functions of temperature and applied bias voltage, each exhibit a peak, whose position shifts towards the reverse bias region, in the depletion region. Such a peak behavior is attributed to the particular distribution of Nss and the reordering and restructuring of Nss under the effect of temperature. The values of activation energy （Ea）, obtained from the slope of the Arrhenius plot, of both structures are obtained to be bias voltage-independent, and the Ea of the metal-ferroelectric-semiconductor （MFS） structure is found to be half that of the metal-semiconductor （MS） structure. Furthermore, other main electrical parameters, such as carrier concentration of acceptor atoms （NA）, built-in potential （Vbi）, Fermi energy （EF）, image force barrier lowering （△φb）, and barrier height （φb）, are extracted using reverse bias C 2-V characteristics as a function of temperature.     

Measurements of the light output functions of plastic scintillator using 9Be（d,n）10B reaction neutron source

The light output functions for protons of ST-401 and BC-408 plastic scintillators were measured using white neutron source produced by the 9Be（d,n） 10B reaction at the HI-13 Tandem Accelerator at China Institute of Atomic Energy（CIAE）.The LOFs of plastic scintillators for protons in the energy range of 0.5-16.5 MeV were obtained by the time-of-flight（TOF） technique and an iterative procedure.Two parameters（kB and C） were deduced by fitting the experimental data.     

Structure distortion,optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl 3 to SbCl 3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550°C for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×10 8 , 3.26×10 8 , 5.23×10 8 , and 6.97×10 8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.     

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.     

In situ electrical resistance and activation energy of solid C6o under high pressure

The in situ electrical resistance and transport activation energies of solid C60 fullerene have been measured under high pressure up to 25 GPa in the temperature range of 300-423 K by using a designed diamond anvil cell. In the experiment, four parts of boron-doped diamond films fabricated on one anvil were used as electrical measurement probes and a W-Ta thin film thermocouple which was integrated on the other diamond anvil was used to measure the temperature. The current results indicate that the measured high-pressure resistances are bigger than those reported before at the same pressure and there is no pressure-independent resistance increase before 8 GPa. From the temperature dependence of the resistivity, the C60 behaviors as a semiconductor and the activation energies of the cubic C60 fullerene are 0,49, 0.43, and 0.36 eV at 13, 15, and 19 GPa, respectively.     

Preparation of multi-walled carbon nanotube–Fe composites and their application as light weight and broadband electromagnetic wave absorbers

Multi-walled carbon nanotube （MWCNT）-Fe composites were prepared via the metal organic chemical vapor deposi- tion by depositing iron pentacarbonyl on the surface of MWCNTs. The structural and morphological analyses demonstrated that Fe nanoparticles were deposited on the surface of the MWCNTs. The electromagnetic properties of the MWCNTs were significantly changed, and the absorbing capacity evidently improved after the Fe deposition on the MWCNT surface. A minimum reflection loss of -29.4 dB was observed at 8.39 GHz, and the less than -10 dB bandwidth was about 10.6 GHz, which covered the whole X band （8.2-12.4 GHz） and the whole Ku band （12.4-18 GHz）, indicating that the MWCNT-Fe composites could be used as an effective microwave absorption material.     

Improved mobility of AIGaN channel heterojunction material using an AIGaN/GaN composite buffer layer

The quality of an A1GaN channel heterojunction on a sapphire substrate is massively improved by using an A1- GaN/GaN composite buffer layer. We demonstrate an A10.4Gao.6N/AI0.18Ga0.82N heterojunction with a state-of-the-art mobility of 815 cm2/（V.s） and a sheet resistance of 890Ω/口 under room temperature. The crystalline quality and the electrical properties of the A1GaN heterojunction material are analyzed by atomic force microscopy, high-resolution X-ray diffraction, and van der Pauw Hall and capacitance-voltage （C-V） measurements. The results indicate that the improved electrical properties should derive from the reduced surface roughness and low dislocation density.     

Electrical properties of MOCVD-grown GaN on Si （111） substrates with low-temperature AIN interlayers

The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.     

Significant performance enhancement in A1GaN/GaN high electron mobility transistor by high-κ organic dielectric

The electrical properties of A1GaN/GaN high electron mobility transistor （HEMT） with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/A1CaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare A1GaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the A1GaN/GaN HEMT by introducing the high-κ organic dielectric.     

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Sb-doped ZnO thin films with different values of Sb content （from 0 to 1.1 at.%） are deposited by the sol-gel dip- coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy （UV-VIS） spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance （〉 90%） in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence （PL） spectra revealed that the defect emission （around 450 nm） is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.     

Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency rangeElectrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency rangeElectrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

The perylene （C20H12） layer effect on the electrical and dielectric properties of Al/p-Si （MS） and Al/perylene/p-Si （MPS） diodes have been investigated and compared in the frequency range of 0.7 kHz-2 MHz. Experimental results show that C-V characteristics give an anomalous peak for two structures at low frequencies due to interface states （Nss） and series resistance （Rs）. The increases in C and G/o3 at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant （er） and dielectric loss （e＇） are subtracted using C and G/co data at 1.5 V. The eI and e＂ values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln（o＇ac）-ln（w） for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C 2-V characteristics, the doping acceptor atom concentration （NA） and barrier height （,~） for Schottky barrier diodes （SBDs） 1.303 ~ 1015 cm-3, and 1.10 and I. 13 eV, respectively. of MS and MPS types are also obtained to be 1.484 ~ 1015 and     

用于测量熔合反应的静电偏转板介绍

An electrostatic deflector for separating the fusion evaporation residues from the beam-like products in heavy ion reactions was installed. The evaporation residue separation and identification with the electrostatic deflector setup was tested with the reaction ^32S＋^96Zr at several energies. The fusion evaporation residues and the beam-like particles were well separated after the electrical separation and the experimental fusion cross section obtained from the angular distribution is in good agreement with the calculated value well above the Coulomb barrier. This confirms the reliability of the setup.     

Matrix method for the solution of RF field perturbations due to local frequency shifts

To tune the accelerating field to the design value in a periodical radio frequency accelerating structure, Slater＇s perturbation theorem is commonly used. This theorem solves a second-order differential equation to obtain the electrical field variation due to a local frequency shift. The solution becomes very difficult for a complex distribution of the local frequency shifts. Noticing the similarity between the field perturbation equation and the equation describing the transverse motion of a particle in a quadrupole channel, we propose in this paper a new method in which the transfer matrix method is applied to the field calculation instead of directly solving the differential equation. The advantage of the matrix method is illustrated in examples.     

Coverage Dependence of Growth Mode in Heteroepitaxy of Ni on Cu（100） Surface

A realistic kinetic Monte Carlo （KMC） simulation model with physical parameters is developed, which well reproduces the heteroepitaxial growth of multilayered Ni thin film on Cu（100） surfaces at room temperature. The effects of mass transport between interlayers and edge diffusion of atoms along the islands are included in the simulation model, and the surface roughness and the layer distribution versus total coverage are calculated. Speeially, the simulation model reveals the transition of growth mode with coverage and the difference between the Ni heteroepitaxy on Cu（100） and the Ni homoepitaxy on Ni（100）. Through comparison of KMC simulation with the real scanning tunneling microscopy （STM） experiments, the Ehrlich-Schwoebel （ES） barrier Ees is estimated to be 0.18±0.02 eV for Ni/Cu（100） system while 0.28 eV for Ni/Ni（100）. The simulation also shows that the growth mode depends strongly on the thickness of thin film and the surface temperature, and the critical thickness of growth mode transition is dependent on the growth condition such as surface temperature and deposition flux as well.     

Effects of Levy noise and immune delay on the extinction behavior in a tumor growth model

The combined effects of Ltvy noise and immune delay on the extinction behavior in a tumor growth model are explored, The extinction probability of tumor with certain density is measured by exit probability. The expression of the exit probability is obtained using the Taylor expansion and the infinitesimal generator theory. Based on numerical calculations, it is found that the immune delay facilitates tumor extinction when the stability index α〈 1, but inhibits tumor extinction when the stability index α 〉 1. Moreover, larger stability index and smaller noise intensity are in favor of the extinction for tumor with low density. While for tumor with high density, the stability index and the noise intensity should be reduced to promote tumor extinction.     

Intrinsic noise analysis and stochastic simulation on transforming growth factor beta signal pathway

A typical biological cell lives in a small volume at room temperature; the noise effect on the cell signal transduction pathway may play an important role in its dynamics. Here, using the transforming growth factor-β signal transduction pathway as an example, we report our stochastic simulations of the dynamics of the pathway and introduce a linear noise approximation method to calculate the transient intrinsic noise of pathway components. We compare the numerical solutions of the linear noise approximation with the statistic results of chemical Langevin equations, and find that they are quantitatively in agreement with the other. When transforming growth factor-β dose decreases to a low level, the time evolution of noise fluctuation of nuclear Smad2-Smad4 complex indicates the abnormal enhancement in the transient signal activation process.     

Anomalous Scaling of Surface Growth Equations with Spatially and Temporally Correlated Noise

Based on the scaling idea of local slopes by Lopez et al. [Phys. Rev. Lett. 94 （2005） 166103], we investigate anomalous dynamic scaling of （d ＋ 1）-dimensional surface growth equations with spatially and temporally correlated noise. The growth equations studied include the Kardar-Parisi-Zhang （KPZ）, Sun-Guo-Grant （SGG）, and Lai-Das Sarma-Villain （LDV） equations. The anomalous scaling exponents in both the weak- and strong-coupling regions are obtained, respectively.     

Stochastic Resonance in a Bacterium Growth System Subjected to Colored Noises

We present the logistic growth model to study the stochastic resonance （SR） in a bacterium growth system under the simultaneous action of two external multiplicative cross-correlation noises and periodic external forcing. The expression of the signal-to-noise ratio （SNR） for a bacterium growth system is derived by using the theory of SNR in the adiabatic limit. Based on SNR, we discuss the effects of self-correlation time τ1 and τ2, cross-correlation time 3-3 and cross-correlation strength λ on the SNR. It is found that the self-correlation time τ1 and τ2, and cross-correlation strength λ enhance the SR of the bacterium growth system, while cross-correlation time τ3 weakens the SR of the bacterium growth system.     

Weighted Evolving Networks with Self-organized Communities

In order to describe the self-organization of communities in the evolution of weighted networks, we propose a new evolving model for weighted community-structured networks with the preferential mechanisms functioned in different levels according to community sizes and node strengths, respectively. Theoretical analyses and numerical simulations show that our model captures power-law distributions of community sizes, node strengths, and link weights, with tunable exponents of v ≥ 1, γ 〉 2, and α 〉 2, respectively, sharing large clustering coefficients and scaling clustering spectra, and covering the range from disassortative networks to assortative networks. Finally, we apply our new model to the scientific co-authorship networks with both their weighted and unweighted datasets to verify its effectiveness.