N-(3,5-二甲基苯基)氨基甲酸酯单糖及二糖作为高效液相色谱 手性固定相研究

广泛使用的环糊精和多糖手性固定相是由吡喃型葡萄糖结构单元构成, 将D-葡萄糖、D-半乳糖、D-甘露糖、D-木糖、麦芽糖、蔗糖、乳糖、纤维二糖的N-(3,5-二甲基苯基)氨基甲酸酯经过3-异氰酸丙基三乙氧基硅烷键合到硅胶上作为高效液相色谱的手性固定相, 结果表明它们也具有好的手性分离能力, 并且它们之间的手性识别能力还具有好的互补性. 该研究表明, 在高效液相色谱中寡糖能成为一类新型的手性固定相.     

积分球内的铷原子激光冷却

研究了积分球内激光冷却原理,设计积分球时对积分球的反射率、尺寸及球上开孔大小对于激光冷却的影响进行了讨论. 进行了积分球冷却⁸⁷Rb实验,实验结果表明积分球有效的冷却了球腔中的铷原子,获得了积分球内冷原子的吸收信号以及冷原子随冷却光失谐的变化曲线. 关键词： 漫反射光场 积分球 全光冷却     

Fe-Zn-Zr/分子筛复合催化剂上CO2加氢合成异构烷烃Ⅰ.不同分子筛对催化剂性能的影响

 在Fe-Zn-Zr/分子筛复合催化剂上考察了不同类型的分子筛对CO2加氢反应性能的影响. 结果表明,不同分子筛对复合催化剂性能的影响不同,Fe-Zn-Zr/HY是合成异构烷烃有效的复合催化剂. 分子筛的酸性及酸强度对复合催化剂性能有较大的影响,中等强度和较高强度的酸性位有利于异构烃的生成.     

薏仁种类的近红外光谱技术快速鉴别

薏仁是一种药食两用资源,对其品质快速鉴别的需求也越来越多,近红外光谱技术(near infrared spectroscopy,NIRS)作为一种快速、 无损且环保的方法正适合这一需求。 以不同产地和品种薏仁的近红外光谱为基础,结合化学计量学方法对薏仁种类进行鉴别。 对原光谱用无监督学习算法主成分分析(principal component analysis,PCA)和有监督学习算法学习向量量化(learning vector quantization,LVQ)神经网络、 支持向量机(support vector machine,SVM)进行定性判别分析。 由于不同地区和不同品种的薏仁营养物质组成复杂且含量相近,所选两类薏仁的特征变量很相似,因而PCA得分图重叠严重,很难区分;而LVQ神经网络和SVM都能得到满意结果,LVQ神经网络的预测正确率为90.91%,SVM在经过惩罚参数和核函数参数优选后,分类准确率能达到100%。 结果表明：近红外光谱技术结合化学计量学方法可作为一种快速、 无损、 可靠的方法用于薏仁种类的鉴别,并为市场规范提供技术参考。     

Effect of normalized plasma frequency on electron phase-space orbits in a free-electron laser

Irregular phase-space orbits of the electrons are harmful to the electron-beam transport quality and hence deteriorate the performance of a free-electron laser （FEL）. In previous literature, it was demonstrated that the irregularity of the electron phase-space orbits could be caused in several ways, such as varying the wiggler amplitude and inducing sidebands. Based on a Hamiltonian model with a set of self-consistent differential equations, it is shown in this paper that the electron- beam normalized plasma frequency functions not only couple the electron motion with the FEL wave, which results in the evolution of the FEL wave field and a possible power saturation at a large beam current, but also cause the irregularity of the electron phase-space orbits when the normalized plasma frequency has a sufficiently large value, even if the initial energy of the electron is equal to the synchronous energy or the FEL wave does not reach power saturation.     

Optical total reflection and transmission with mode control in a dielectric subwavelength nanorod chain

We report a polarization dependent reflection phenomenon beyond the normal incidence with a subwavelength nanorod chain.Light waves of the transverse electric mode will be totally reflected while those of the transverse magnetic mode will transmit through.The total reflection or transmission phenomenon can be seen as a constructive or destructive interference of the incident field with the transverse mode field of the chain.With the low-loss feature and the ultra-compact characteristic,this structure may find applications in photonic circuits.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.     

NO_x在Pt及其合金表面吸附的第一性原理模拟研究

本研究通过密度泛函理论(DFT)模拟氮氧化物(NO_X)在Pt及Pt/(Au,Rh)合金slab模型(111)表面的吸附行为,计算其吸附能与结合能.对比NO和NO_2的实验结果,表明合金元素的添加,可能使Pt(111)对NO_X的吸附能力和选择性发生变化,其中Au元素表面置换使得总吸附能力下降,但更容易吸附NO_2; Rh元素表面置换则使得总吸附能力提高,且更容易吸附NO.     

一种提高轨道精度的改进姿态控制技术

针对我国长征系列火箭普遍存在的残骸落点普遍较理论落点靠前的现象,开展多次飞行数据的比较,结果发现一级上升段内火箭的飞行速度、位置与设计预示值之间的偏差存在极性稳定、幅值增加增大的特点,尤其是Y向速度偏差甚至超过5%,远大于预期值;本文针对该现象开展机理分析,最终确认现在长征系列火箭普遍采用的“姿态角偏差+角速度”控制方案对程序角持续变化的工况存在幅值及极性较为稳定的静差,该角偏差持续作用下,将导致X向和Y向速度及位置偏差;针对该机理,探索、比较潜在的解决措施,最终确定采用实现简便、控制效果好的“姿态角偏差+角速度偏差”双偏差姿态控制方案;仿真结果表明,双偏差姿态控制方案能显著提高助残骸落点精度及段轨道精度、降低气动载荷,有利于火箭飞行品质的提升。