不同绝缘层上生长的并五苯薄膜及其OTFT器件性能的研究

分别以SiO₂和PMMA为绝缘层材料制备了底栅顶接触结构的OTFT器件,得到以PMMA为绝缘层的器件具有更好的性能,其场效应迁移率为0.207 cm2·Vs-1,开关电流比为4.93×103,阈值电压为-4.3 V;而以SiO₂为绝缘层的器件,其场效应迁移率仅为0.039 cm2·Vs-1,开关电流比为5.98×102,阈值电压为-5.4 V。为分析器件性能差异的原因,测得了SiO₂和PMMA薄膜表面的AFM图谱及其上沉积并五苯薄膜后的AFM和XRD图谱。通过AFM图谱发现PMMA表面较SiO₂表面粗糙度小,其表面粗糙度的均方根值为0.216 nm,而二氧化硅薄膜表面粗糙度的均方根值为1.579 nm;且发现在PMMA上生长的并五苯薄膜的成膜质量优于在SiO₂,具有较大的晶粒尺寸和较少的晶粒间界。通过XRD图谱发现在PMMA上生长的并五苯薄膜具有明显的衍射峰,进一步证明了在PMMA上生长的并五苯薄膜具有更好的结晶状况,将更有利于载流子的传输。     

Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly（3-hexylthiophene） field-effect transistors

In order to enhance the performance of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs), RR-P3HT FETs are prepared by the spin-coating method followed by vacuum placement and annealing. This paper reports that the crystal structure, the molecule interconnection, the surface morphology, and the charge carrier mobility of RR-P3HT films are affected by vacuum relaxation and annealing. The results reveal that the field-effect mobility of RR-P3HT FETs can reach 4.17×10^ - 2~m²/(V.s) by vacuum relaxation at room temperature due to an enhanced local self-organization. Furthermore, it reports that an appropriate annealing temperature can facilitate the crystal structure, the orientation and the interconnection of polymer molecules. These results show that the field-effect mobility of device annealed at 150~℃ for 10 minutes in vacuum at atmosphere and followed by placement for 20 hours in vacuum at room temperature is enhanced dramatically to 9.00×10^ - 2 ~cm²/(V.s).     

ScF3，NaScF4，(NH4)2NaScF6的可控合成与上转换发光性能的研究

钪基氟化物化学性质稳定、声子能量低、无辐射弛豫概率较低,是一种新型高效的基质材料,并且Sc3+半径较小,能与多种氨羧络合剂形成稳定的螯合物,因而具有更加奇特的物理和化学性质,近年来,成为许多科学家研究的热点。以聚乙烯二胺(PEI)作为表面活性剂,采用水热法在反应温度为200 ℃时成功制备了ScF₃∶Yb3+/Er3+,NaScF₄∶Yb3+/Er3+,(NH₄)₂NaScF₆∶Yb3+/Er3+纳米上转换发光材料。通过X射线衍射仪(XRD)、透射电镜(TEM)、扫描电镜(SEM)和荧光光谱仪对所制备样品的晶相、形貌和发光特性进行了研究,结果显示：通过改变反应物NH₄F和Ln3+的比例(NH₄F/Ln3+=1∶1,2∶1,2.5∶1,3∶1,4∶1,6∶1,10∶1,20∶1,30∶1,40∶1,50∶1)实现了对样品产物、晶相、形貌的控制。当NH₄F/Ln3+为2.5∶1时,生成了纯立方相的ScF₃;在NH₄F/Ln3+为4∶1时,生成了六角相的NaScF₄;在NH₄F/Ln3+为40∶1时,生成了一种纯立方相的新型基质材料(NH₄)₂NaScF₆,样品结晶度高,形貌均一,有正方形片状和足球状多面体;在980 nm红外激光的激发下,不同NH₄F/Ln3+比例生成的样品发光呈现桔黄→桔红→绿→黄绿等多种颜色的变化。实验表明仅改变NH₄F一种原料的用量,就可以生成ScF₃∶Yb3+/Er3+,NaScF₄∶Yb3+/Er3+和(NH₄)₂NaScF₆∶Yb3+/Er3+ 三种不同的产物,说明NH₄F的用量对产物的生成有决定性的作用,对晶相的转换、颜色的调控亦有重要影响。     

退火气压对于P3HT∶PCBM微观形貌及光伏性能的影响

通过精确设定不同的退火环境气压,实现对P3HT(Poly(3-hexylthiophene -2,5-diyl)与PCBM([6,6]-Phenyl C₆₁ butyric acid methyl ester)体系中聚噻吩结晶度以及共混相分离程度的控制,并在此基础上制备了结构为ITO/PEDOT∶PSS/P3HT∶PCBM/Al的正型光伏器件。在允许的压强设定范围内,器件各项性能参数均随退火环境压强的增大表现出先升高后下降的变化规律,并统一于气压设定为1 500 mTorr时获得最大值。从活性层的紫外-可见(UV-Vis)吸收光谱中发现P3HT在510 nm吸收峰以及550和600 nm肩峰附近的吸收强度随退火气压升高而增大,在气压为1 500 mTorr时达到最高,吸收强度的提升源于聚合物分子π—π堆叠的增加。原子力显微镜(AFM)进一步分析结果表明,高气压环境(>1 000 mTorr)能够促进P3HT∶PCBM共混组分在退火过程中形成较大程度的相分离,而当环境压强合适时(1 500 mTorr)适度的相分离利于聚合物形成良好有序结晶,从而能够提升活性层内部载流子传输能力,保证较高的短路电流与填充因子,制备的器件也因此表现出良好的光伏性能,光电转化效率达到3.56%。     

物理混合法制备分级混晶TiO2微纳米材料及其光催化性能

通过物理混合法可控合成了分级混晶TiO₂微纳米材料, 采用扫描电子显微镜(SEM)、 透射电子显微镜(TEM)、 X射线衍射仪(XRD)、 X射线光电子能谱仪(XPS)和固体紫外-可见分光光度计(UV-Vis)等对该微纳米材料进行了表征, 并评价了不同混晶比材料的光催化性能. 结果表明, 所得材料是由均匀负载金红石纳米颗粒的锐钛矿纳米片组装的三维分级结构. 其具有很高的光催化活性, 分级结构和混晶异相结的同时引入是提高材料光催化活性的关键.     

Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

In this article, an organic thin-film field-effect transistor (OTFFET) with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current (AC) resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage (V_DS) less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.     

Shape controllable synthesis and enhanced upconversion photoluminescence of β-NaGdF_4:Yb~(3+), Er~(3+) nanocrystals by introducing Mg~(2+)

Different concentrations of Mg~(2+) -doped hexagonal phase NaGdF_4:Yb~(3+), Er~(3+)nanocrystals(NCs) were synthesized by a modified solvothermal method. Successful codoping of Mg~(2+)ions in upconversion nanoparticles(UCNPs) was supported by XRD, SEM, EDS, and PL analyses. The effects of Mg~(2+)doping on the morphology and the intensity of the upconversion(UC) emission were discussed in detail. It turned out that with the concentration of Mg~(2+)increasing, the morphology of the nanoparticles turn to change gradually and the UC emission was increasing gradually as well. Notably the UC fluorescence intensities of Er~(3+)were gradually improved owing to the codoped Mg~(2+)and then achieved a maximum level as the concentration of Mg~(2+)ions was 60 mol% from the amendment of the crystal structure of β-NaGdF_4:Yb~(3+),Er~(3+)nanoparticles. Moreover, the UC luminescence properties of the rare-earth(Yb3+, Er~(3+)) ions codoped NaGdF_4 nanocrystals were investigated in detail under 980-nm excitation.     

过渡区p型氢化硅氧薄膜结构和光电特性的研究

采用射频等离子体增强化学气相沉积技术,利用二氧化碳(CO_2)、氢气(H_2)、硅烷(SiH_4)和乙硼烷(B_2H_6)作为气源,制备出一系列p型氢化硅氧薄膜.利用拉曼光谱、傅里叶变换红外光谱和暗电导测试,研究了不同二氧化碳流量对薄膜材料结构和光电特性的影响,获得了从纳米晶相向非晶相转变的过渡区P层.研究表明:随着二氧化碳流量从0增加到1.2 cm~3·min~(-1),拉曼光谱的峰值位置从520 cm~(-1)逐渐移至480 cm~(-1).材料红外光谱表明,随着二氧化碳流量的增加,薄膜中的氧含量逐渐增加,氢键配置逐渐由硅单氢键转换为硅双氢键.P层SiO:H薄膜电导率从3S/cm降为8.3×10~(-6)S/cm.所有p型SiO:H薄膜的光学带隙(Eopt)都在1.82—2.13 eV之间变化.在不加背反射电极的条件下,利用从纳米晶相向非晶相转变的过渡区P层作为电池的窗口层,且在P层和I层之间插入一定厚度的缓冲层,制备出效率为8.27%的非晶硅薄膜电池.     

固态阴极射线器件复合加速层的研究

固态阴极射线器件的加速层,是提高固态阴极射线性能的重要部分,它能够加大电子能量,倍增电子数量。其中增加注入电子从而提高过热电子的数量,是提高固态阴极射线器件性能的关键。为此 ,文章尝试将加速层复合,兼顾加速与电子注入性能。首先将SiO₂,ZnS和ZnO分别与有机聚合物MEH-PPV组合,确定较适合的复合加速层的组合：SiO₂/ZnS和 ZnO/SiO₂。然后将这两种复合加速层的性能对比,发现SiO₂/ZnS的性能更优越,因为电子注入性能ZnS和ZnO相当,而电子加速倍增性能ZnS明显优于ZnO,其中 SiO₂为主要的加速层,而ZnS起到降低注入势垒变成阶梯势垒的作用。最后又将复合加速层结构的固态阴极射线器件和传统的SiO₂夹层固态阴极射线器件对比,发现这种复合 加速层结构,尤其在高场下,可提高固态阴极射线的初电子源和过热电子的数目,从而提高其发光效率具有促进作用。     

有机阱结构器件在反向偏压调制下光致发光猝灭的研究

实验过程中制备了3种不同周期的有机阱结构器件,分别用N,N’-diphenyl-N,N’-bis(1-napthyl)-1,1’-biphenyll-4,4’-diamine(NPB)和4,4,N,N’-dicarbazolebiphenyl(CBP)作为电子的势阱和势垒。讨论了3个器件在反向偏压调制下的光致发光的猝灭。研究结果显示在作者所制备的器件中NPB层中激子的猝灭速度要比CBP层中的激子猝灭速度快。这主要是因为NPB层中的有效电场要比CBP层中的有效电场强。当所制备的有机阱结构器件的周期数增加时,在相同的反向电场下,NPB和CBP层中的激子猝灭速度会随之增加,因为实验中制备的这3个器件为Ⅱ型量子阱结构,激子在这种阱结构器件中会随着阱周期数的增加而变得越来越不稳定,因此周期数较大的器件猝灭现象比较明显。