Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

In this article, an organic thin-film field-effect transistor (OTFFET) with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current (AC) resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage (V_DS) less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.     

基于误差补偿的分布式喇曼温度传感器(英文)

基于分布式喇曼传感器,对斯托克斯光和反斯托克斯光两路信号的同步问题进行了合理假设,并给出相应的补偿方法.为了进一步提高解调温度的准确度,采用温度解调系统及温度解调软件对实验系统收集到的数据进行分析.给出了实际开发分布式喇曼传感系统中补偿后离散式的温度解调算法,对该算法解调出来的温度进行实验测试.结果表明:解调温度的误差和监测点到光纤光注射端的距离及相应监测点待解调的温度值均有线性关系.该温度传感器空间分辨率达1m,对于整个2km的探测光纤,即使考虑到温控箱拥有0.5℃左右温度误差,整个实验系统的温度解调误差也在1℃左右.     

最小二乘拟合计算有机薄膜晶体管迁移率的研究

本文通过制备了一个基于并五笨为有源层的顶栅底接触OTFT器件获取电流电压实验数据,并运用电流电压特性曲线理论拟合计算方法计算其场效应迁移率.研究发现,采用不同的拟合方法得到的场效应迁移率值有较大的差异.若选取转移特性曲线线性区距中心1/2范围内测试点进行最小二乘拟合计算出的场效应迁移率能减少采用其他拟合方法的固有不准确性,而且与其他方法得到的场效应迁移率最接近. 关键词： 最小二乘拟合 场效应迁移率 有机薄膜晶体管     

1μm波段宽带可调谐锁模光纤激光器

报道了一种工作于1μm波段、正常色散区、基于半导体可饱和吸收镜(SESAM)的被动锁模光纤激光器。激光器以高掺杂Yb光纤为增益物质,结合可调谐滤波器,形成环形腔结构。采用976nm半导体激光器抽运,当抽运功率大于16dBm时,激光器可实现1033～1069nm波长范围内重复频率为25.4MHz的宽带可调谐输出,性能稳定,在调谐范围内均可观测到非常规则的矩形输出光谱。在固定抽运功率下,对调谐范围内输出功率、光谱带宽、时域脉宽进行了实验测量和分析。在波长为1064nm时,用单通道光栅对将谱宽为1.745nm、时域脉宽为34.85ps的脉冲压缩至15.45ps。