Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.     

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor(HEMT) becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping(2D-VRH) model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.     

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

In this paper, we present a two-dimensional （2D） fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor （FP-HEMT） on the basis of 2D Poisson＇s solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, A1GaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco-Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc.     

基于金属圆弧孔阵列强透射的折射率传感特性

提出了一种由左右、上下对称的一大一小圆弧组成的金属圆弧孔阵列结构。利用该结构形成的法布里-珀罗腔来加强表面等离激元的耦合作用,以获得较好的强透射现象;同时研究了基于该现象的折射率传感特性。采用有限时域差分法研究了该孔阵列结构中大小圆弧孔的半径、两圆弧的圆心距和阵列周期对强透射现象的影响。研究发现,当大圆弧半径为95nm、小圆弧半径为70nm、两圆弧的圆心距为100nm、周期为425nm时,该结构具有较好的强透射现象,其灵敏度为279nm/RIU,为下一代高性能微纳米等离子体传感器的设计提供了理论参考。     

红外光学系统内部构件热辐射分析

红外光学系统的内部构件由于呈现于光路之中,其表面热辐射将会通过光学系统到达探测像面而引起背景辐射噪声。本文利用LightTools分析软件对一套折反式红外光学系统内部机械构件的主要表面的热辐射进行了分析,得到了探测像面接收到的热辐射的量级。分析了三种不同的表面反射率的情况,能够用于指导如何进行表面处理和结构设计的改善。     

多重拉普拉斯运算的扩充

<正> 设 U(P)≡U(x,y)为一二元的可积函数,我们以μ(U;P;r)代表 U(x,y)在以 P 为中心,r 为半径的圆周上之平均值,而以 V(U;P;r)代表 U(x,y)在以P为中心,r 为半径的圆域内部的平均值,即     

高光谱分辨率紫外Offner成像光谱仪系统设计

紫外成像光谱仪是遥感探测仪器的重要组成部分之一。在机载和星载领域,遥感平台正逐步要求光谱仪在实现高分辨率的同时,其设备趋于轻量化和小型化。针对紫外成像光谱仪高光谱分辨率、轻量化、小型化等特点,研究了基于Offner结构的紫外成像光谱系统,设计了一种工作波段为250~400nm、狭缝长40mm、光谱分辨率为0.3nm的高分辨率紫外成像光谱仪,并对设计结果进行了分析与评价。结果表明,这种紫外成像光谱仪在38.5lp/mm处调制传递函数达到0.76以上,实现了接近衍射极限的优良成像质量;谱线弯曲和色畸变在像元尺寸的10%以内。另外,该结构在原Offner结构的基础上大大缩小了系统体积,实现了紫外遥感仪器小型化、轻量化的目的,且易于加工和装调,满足设计指标要求,适合机载和星载遥感应用。     

Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors

V-gate GaN high-electron-mobility transistors (HEMTs) are fabricated and investigated systematically. A V-shaped recess geometry is obtained using an improved Si3N4 recess etching technology. Compared with standard HEMTs, the fabricated V-gate HEMTs exhibit a 17% higher peak extrinsic transconductance due to a narrowed gate foot. Moreover, both the gate leakage and current dispersion are dramatically suppressed simultaneously, although a slight degradation of frequency response is observed. Based on a two-dimensional electric field simulation using Silvaco "ATLAS" for both standard HEMTs and V-gate HEMTs, the relaxation in peak electric field at the gate edge is identified as the predominant factor leading to the superior performance of V-gate HEMTs.     

可调谐交叉领结形石墨烯阵列结构等离子体折射率传感器

设计一种新颖的交叉领结形石墨烯阵列结构等离子体折射率传感器。利用石墨烯与电介质交界面产生的表面等离子体效应,在中红外波段获得双共振透射现象,结合石墨烯的电可调特性来实现透射谱的动态调制,采用时域有限差分法研究该结构中石墨烯的化学势、层数及几何参数对双共振透射现象的影响。结果表明:通过改变石墨烯的化学势及层数能够实现共振位置的调谐;优化结构参数后,该结构具有较好的传感性能和双共振透射现象,2个共振谷的灵敏度分别高达(1280±24) nm/RIU和(2800±49) nm/RIU,品质因数分别为17.1 RIU~(-1)和12.3 RIU~(-1)。研究结果为石墨烯等离子体生物传感器的设计提供了理论依据。