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101.
基于器件模拟仿真,设计了一种PNP型1.5 μm 波长多量子阱InGaAsP-InP异质结晶体管激光器材料外延结构,并采用金属有机化学气相沉积外延生长.其中基区采用N型Si掺杂.因为扩散系数小,比较P型Zn搀杂具有较高的稳定性,因而较NPN结构外延材料容易获得高质量的光学有源区.由于N型欧姆接触比P型容易获得,基区搀杂浓度可以相对较低,有利于减小基区光损耗和载流子复合,从而获得较低的阈值电流和较高的输出光功率.所获得的外延材料呈现较高光-荧光谱峰值和65.1 nm较低半峰宽.测试结果显示了较高的外延片光学质量. 相似文献
102.
103.
具有复杂界面特性(如界面弹性、界面抗弯特性等)的弹性液滴(如血液细胞)的动力学行为对理解血流等液滴群流动极其重要。本文采用界面追踪法(Front tracking method)捕捉界面演变,界面有限元考虑界面弹性和抗弯特性,有限差分法求解控制方程,发展了研究复杂界面液滴动力学的直接数值模拟方法。通过模拟球形弹性液滴的变形运动验证了该方法的准确性,进而研究了线性剪切流场中弹性液滴的坦克履带式、摇摆式和翻滚式运动。 相似文献
104.
Structure and Magnetic Properties of (In,Mn)As Based Core-Shell Nanowires Grown on Si(111) by Molecular-Beam Epitaxy 下载免费PDF全文
We report the structure and magnetic properties of (In,Mn)As based core-shell nanowires grown on Si (111) by molecular-beam epitaxy. Compared to the core InAs nanowire with a flat side facet and consistent diameter, the core-shell nanowire shows a rough sidewall and an inverse tapered geometry. X-ray diffraction, transmission electron microscopy and energy-dispersive x-ray spectroscopy show that (In,Mn)As is formed on the side facets of In As nanowires with a mixture ofwurtzite and zinc-blende structures. Two ferromagnetic transition temperatures of (In,Mn)As from magnetic measurement data are observed: one is less than 25 K, which could be attributed to the magnetic phase with diluted Mn atoms in the InAs matrix, and the other is at ~300 K, which may originate from the undetectable secondary phases such as MnAs nanoclusters. The synthesis of (In,Mn)As based core-shell nanowires provides valuable information to exploit a new type of spintronic nano-materials. 相似文献
105.
106.
Wavelength tunable passively Q-switched Yb-doped double-clad f iber laser with graphene grown on SiC
Liqiang Zhang Zhuang Zhuo Rusheng Wei Yunzheng Wang Xiufang Chen Xiangang Xu 《中国光学快报(英文版)》2014,12(2):21405-53
A passively Q-switched tunable Yb-doped double-clad fiber laser is demonstrated with graphene epitaxially grown on SiC.The spectral tuning of the Q-switched fiber laser is implemented by rotating a quartz plate filter inside the cavity.The central wavelength of the fiber laser can be continuously tuned from 1038.54 to 1056.22 nm.The maximum pulse energy of 0.65 μJ is obtained at the pump power of 4.08 W,and the corresponding pulse duration and average output power are 1.60 μs and 35 mW,respectively. 相似文献
107.
Nonpolar (1120) GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 (high) phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 (high) peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 (high) peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples. 相似文献
108.
High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a (100) 6 ° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate. 相似文献
109.
Structural and physical properties of BiFeO3 thin films epitaxially grown on SrTiO3(001) and polar(111) surfaces 下载免费PDF全文
The influence of surface polarity on the structural properties of BiFeO3 (BFO) thin films is investigated. BFO thin films are epitaxially grown on SrTiO3 (STO) (100) and polar (111) surfaces by oxygen plasma-assisted molecular beam epitaxy. It is shown that the crystal structure, surface morphology, and defect states of BFO films grown on STO substrates with nonpolar (001) or polar (111) surfaces perform very differently. BFO/STO (001)is a fully strained tetragonal phase with orientation relationship (001)[100]BFOII(001)[100]STO, while BFO/STO (111) is a rhombohedral phase. BFO/STO (111) has rougher surface morphology and less defect states, which results in reduced leakage current and lower dielectric loss. Moreover, BFO films on both STO (001) and STO (111) are direct band oxides with similar band gaps of 2.65 eV and 2.67 eV, respectively. 相似文献
110.
We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge (001) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films. 相似文献