排序方式: 共有9条查询结果,搜索用时 15 毫秒
1
1.
基于器件模拟仿真,设计了一种PNP型1.5 μm 波长多量子阱InGaAsP-InP异质结晶体管激光器材料外延结构,并采用金属有机化学气相沉积外延生长.其中基区采用N型Si掺杂.因为扩散系数小,比较P型Zn搀杂具有较高的稳定性,因而较NPN结构外延材料容易获得高质量的光学有源区.由于N型欧姆接触比P型容易获得,基区搀杂浓度可以相对较低,有利于减小基区光损耗和载流子复合,从而获得较低的阈值电流和较高的输出光功率.所获得的外延材料呈现较高光-荧光谱峰值和65.1 nm较低半峰宽.测试结果显示了较高的外延片光学质量. 相似文献
2.
基于器件模拟仿真,设计了一种PNP型1.5μm波长多量子阱InGaAsP-InP异质结晶体管激光器材料外延结构,并采用金属有机化学气相沉积外延生长.其中基区采用N型Si掺杂.因为扩散系数小,比较P型Zn搀杂具有较高的稳定性,因而较NPN结构外延材料容易获得高质量的光学有源区.由于N型欧姆接触比P型容易获得,基区搀杂浓度可以相对较低,有利于减小基区光损耗和载流子复合,从而获得较低的阈值电流和较高的输出光功率.所获得的外延材料呈现较高光-荧光谱峰值和65.1nm较低半峰宽.测试结果显示了较高的外延片光学质量. 相似文献
3.
4.
混合应变多量子阱有源材料及其增益偏振特性 总被引:1,自引:1,他引:0
采用MOCVD外延交替生长了压应变、张应变InxGa1-xAsyP1-y多量子阱材料,对应1.3 μm波段.平均应变量-0.16%,周期11 nm.采用三个周期外延材料的芯片制作的LD,实现了TE和TM双偏振模激射. 相似文献
5.
半导体光放大器的耦合光纤形成的外腔反馈通过引入弯曲损耗得以抑制.通过对半导体光放大器有源波导引入对前、后向光场非对称散射损耗,以前向光场部分损耗为代价,反馈光场能量被分布式地较强辐射.时域有限差分法仿真研究表明,通过优化弯曲有源波导的结构,相对于通常的有源直波导,在相同的材料增益和输入、输出条件下,反馈可以下降10 dB以上.由此可以简化高增益半导体光放大器的器件结构. 相似文献
6.
The spin-dependent conductance and magnetoresistance ratio
(MRR) for a semiconductor heterostructures consisting of two
magnetic barriers with different height and space have been
investigated by the transfer-matrix method. It is shown that the
splitting of the conductance for parallel and antiparallel
magnetization configurations results in tremendous spin-dependent
MRR, and the maximal MRRs reach 5300\% and 3800\% for the magnetic
barrier spaces W=81.3 and 243.9~nm, respectively. The obtained
spin-filtering transport property of nanostructures with magnetic
barriers may be useful to magnetic-barrier-based spintronics. 相似文献
7.
8.
基于器件模拟仿真,设计了一种1.5μm波长InGaAsP-InP晶体管激光器材料外延结构.其多量子阱有源区置于基区非对称波导中.仿真结果显示该外延结构能够获得较好的光场限制和侧向电流限制.对该材料MOCVD生长研究表明,基极重掺杂接触层中Zn2+扩散将导致量子阱严重退化.通过对其扩散过程的模拟仿真,采用平均掺杂浓度为1×1018cm-3的梯度掺杂,有效地抑制了Zn2+向量子阱区的扩散.所获得的外延材料在1.51μm呈现较强的PL峰值,具有卫星峰清晰的XRD谱. 相似文献
9.
This paper studies the electronic transport property
through a square potential barrier in armchair-edge graphene
nanoribbon (AGNR). Using the Dirac equation with the continuity
condition for wave functions at the interfaces between regions with
and without a barrier, we calculate the mode-dependent transmission
probability for both semiconducting and metallic AGNRs,
respectively. It is shown that, by some numerical examples, the
transmission probability is generally an oscillating function of the
height and range of the barrier for both types of AGNRs. The main
difference between the two types of systems is that the magnitude of
oscillation for the semiconducting AGNR is larger than that for
the metallic one. This fact implies that the electronic transport
property for AGNRs depends sensitively on their widths and edge
details due to the Dirac nature of fermions in the system. 相似文献
1