Co1-xMnx合金电子结构和磁性的理论研究

Ｃｏ１－ ｘ Ｍｎｘ 合金的磁性强烈地依赖于其结构以及Ｍｎ 的相对含量．从第一性原理出发,用线性缀加平面波（ＬＡＰＷ） 方法,分别计算了ｘ ＝ ０００ ,０２５ ,０５０ ,０７５ ,１００ 的情况下,面心立方（ｆｃｃ） 和体心立方（ｂｃｃ） 结构的Ｃｏ１－ ｘ Ｍｎ ｘ 合金的电子结构和基态磁性．随ｘ 的增大,ｆｃｃ 结构的Ｃｏ１－ ｘＭｎ ｘ 合金的磁性从铁磁性和亚铁磁性变为反铁磁性;ｂｃｃ 结构Ｃｏ１－ ｘ Ｍｎｘ 合金从铁磁性减弱到亚铁磁性．较好地解释了有关Ｃｏ１ － ｘ Ｍｎ ｘ 合金的结构和磁性关联的实验结果     

Co1-xMnx合金电子结构和磁性的理论研究

Co_1-xMn_x合金的磁性强烈地依赖于其结构以及Mn的相对含量.从第一性原理出发,用线性缀加平面波(LAPW)方法,分别计算了x=0.00,0.25,0.50,0.75,1.00的情况下,面心立方(fcc)和体心立方(bcc)结构的Co_1-xMn_x合金的电子结构和基态磁性.随x的增大,fcc结构的Co_1-xMn_x合金的磁性从铁磁性和亚铁磁性变为反铁磁性;bcc结构Co相似文献   

Variations from Zn1-xCoxO Magnetic Semiconductor to Co-ZnCoO Granular Composite

We investigate the variations from as-deposited Zn1-x： Cox O magnetic semiconductors to the post-annealed Co- ZnCoO granular composite. The as-deposited Zn1-x Cox 0 magnetic semiconductor deposited under thermal nonequilibrium conditions is composed of Zn1-x. Cox O nanograins of high Co concentration. The room-temperature ferromagnetism with high magnetization and large negative magnetoresistance are found in the as-deposited samples. By annealing, the samples become of granular composite consisting of the Co metal grains and the remanent Zn1-x CoxO matrix. Although the magnetization is enhanced after annealing, the spin-dependent negative magnetoresistance disappears at room temperature. The magnetoresistance observed in the annealed samples in the high field region has no relation with the ferromagnetism, which in turn indicates that the roomtemperature ferromagnetism and large negative magnetoresistance observed in the as-deposited are the intrinsic properties of the Zn1-x Cox O magnetic semiconductor.     

Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.