Wavelength tunable passively Q-switched Yb-doped double-clad f iber laser with graphene grown on SiC

A passively Q-switched tunable Yb-doped double-clad fiber laser is demonstrated with graphene epitaxially grown on SiC.The spectral tuning of the Q-switched fiber laser is implemented by rotating a quartz plate filter inside the cavity.The central wavelength of the fiber laser can be continuously tuned from 1038.54 to 1056.22 nm.The maximum pulse energy of 0.65 μJ is obtained at the pump power of 4.08 W,and the corresponding pulse duration and average output power are 1.60 μs and 35 mW,respectively.     

Improvement in a-plane GaN crystalline quality using wet etching method

Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.     

Two crucial factors influencing quality of GaAs on Ge substrate

High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a （100） 6 ° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.     

Structural and physical properties of BiFeO3 thin films epitaxially grown on SrTiO3（001） and polar（111） surfaces

The influence of surface polarity on the structural properties of BiFeO3 （BFO） thin films is investigated. BFO thin films are epitaxially grown on SrTiO3 （STO） （100） and polar （111） surfaces by oxygen plasma-assisted molecular beam epitaxy. It is shown that the crystal structure, surface morphology, and defect states of BFO films grown on STO substrates with nonpolar （001） or polar （111） surfaces perform very differently. BFO/STO （001）is a fully strained tetragonal phase with orientation relationship （001）[100]BFOII（001）[100]STO, while BFO/STO （111） is a rhombohedral phase. BFO/STO （111） has rougher surface morphology and less defect states, which results in reduced leakage current and lower dielectric loss. Moreover, BFO films on both STO （001） and STO （111） are direct band oxides with similar band gaps of 2.65 eV and 2.67 eV, respectively.     

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge （001） at low temperature

We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.     

Structure and Magnetic Properties of （In,Mn）As Based Core-Shell Nanowires Grown on Si（111） by Molecular-Beam Epitaxy

We report the structure and magnetic properties of （In,Mn）As based core-shell nanowires grown on Si （111） by molecular-beam epitaxy. Compared to the core InAs nanowire with a flat side facet and consistent diameter, the core-shell nanowire shows a rough sidewall and an inverse tapered geometry. X-ray diffraction, transmission electron microscopy and energy-dispersive x-ray spectroscopy show that （In,Mn）As is formed on the side facets of In As nanowires with a mixture ofwurtzite and zinc-blende structures. Two ferromagnetic transition temperatures of （In,Mn）As from magnetic measurement data are observed： one is less than 25 K, which could be attributed to the magnetic phase with diluted Mn atoms in the InAs matrix, and the other is at ～300 K, which may originate from the undetectable secondary phases such as MnAs nanoclusters. The synthesis of （In,Mn）As based core-shell nanowires provides valuable information to exploit a new type of spintronic nano-materials.     

金属有机源化学气相沉积法生长氧化锌薄膜中氢气的作用及其机理

本文重点探讨了金属有机源化学气相沉积生长ZnO薄膜中氢气的作用与机理.研究表明氢气对ZnO薄膜的结构与性质具有重要的影响.当采用叔丁醇为氧源时,氢气对ZnO薄膜的晶体质量,表面结构和发光性质主要产生负面的影响,同时发现氢气的加入有助于抑制碳的沾污.而当采用笑气为氧源时,测量显示表面变光滑,晶体质量得到提高,发光强度也得到提升.氢气在笑气作为氧源生长ZnO的过程中基本起到了正面的作用.论文最后从氢气降低生长表面能量,提高表面原子迁移能力但存在表面腐蚀作用的方向以上结果给予了较好的解释.研究显示MOCVD生长高质量ZnO薄膜中氢气的优化具有特别重要的意义.     

1 550 nm波长PNP型InGaAsP-InP异质结晶体管激光器材料设计与外延生长

基于器件模拟仿真,设计了一种PNP型1.5 μm 波长多量子阱InGaAsP-InP异质结晶体管激光器材料外延结构,并采用金属有机化学气相沉积外延生长.其中基区采用N型Si掺杂.因为扩散系数小,比较P型Zn搀杂具有较高的稳定性,因而较NPN结构外延材料容易获得高质量的光学有源区.由于N型欧姆接触比P型容易获得,基区搀杂浓度可以相对较低,有利于减小基区光损耗和载流子复合,从而获得较低的阈值电流和较高的输出光功率.所获得的外延材料呈现较高光-荧光谱峰值和65.1 nm较低半峰宽.测试结果显示了较高的外延片光学质量.     

具有复杂界面的三维弹性液滴动力学模拟

具有复杂界面特性(如界面弹性、界面抗弯特性等)的弹性液滴(如血液细胞)的动力学行为对理解血流等液滴群流动极其重要。本文采用界面追踪法(Front tracking method)捕捉界面演变,界面有限元考虑界面弹性和抗弯特性,有限差分法求解控制方程,发展了研究复杂界面液滴动力学的直接数值模拟方法。通过模拟球形弹性液滴的变形运动验证了该方法的准确性,进而研究了线性剪切流场中弹性液滴的坦克履带式、摇摆式和翻滚式运动。     

不同直径液滴撞击亲水壁面动态特性实验研究

本文通过可视化实验研究了不同直径液滴撞击亲水壁面的动态特性.实验利用光学原理同时记录了液滴撞击壁面过程的正面及底面图像。实验结果表明:液滴最大铺展因数随液滴初始直径近似呈线性增长关系;随液滴直径增大,液滴铺展至最大时需要的绝对时间、滞留时间、回缩时间均增长,稳定时的液固接触面积变大;液滴铺展至最大铺展因数所需要的无量纲时间约为1.68;液滴直径越小,则撞击后液膜回缩更为迅速.