基于DNA酶催化的卟啉金属化检测锌

利用G-四链体DNA（T30695）催化Zn²⁺插入到中卟啉IX（MPIX）中，引起荧光偏移的特点，建立了检测Zn²⁺的方法。在40μmol/L MPIX、0.6μmol/L Pb²⁺、5μmol/L T30695和1%Triton的最优实验条件下，该方法在Zn²⁺浓度为0.5～5μmol/L范围内呈现良好的线性关系，相关系数R²=0.95，检出限为73.5 nmol/L。离子选择性实验表明该方法对Zn²⁺具有较好的选择性，用于实际样品测定，回收率在94.7%～100.4%之间。     

从科研中提炼出的精细化工专业实验:新型疏水缔合聚合物的制备、表征及性能测定*

结合教师科研项目,推荐一个精细化工专业实验:疏水缔合聚合物的制备、表征及性能测定。通过该实验可以使学生掌握自由基共聚法制备聚合物的基本原理,掌握一些大型仪器的基本操作、聚合物常用的表征手段及结构分析方法,理解疏水缔合聚合物结构与性能之间深层次的理论联系。该实验项目来源于科研,服务于实践,集聚合反应、结构表征、大分子溶液理化性能测试于一体,具有综合性、前沿性、研究性等特点。本实验的开设有利于提高精细化工方向学生的专业实验水平,提升学生的综合探究素质、创新意识及动手能力。     

基于混合官能团配体一维链状Gd配位聚合物的合成、晶体结构及性质

以Gd(NO_3)_2·6H_2O和5-磺酸基间苯二甲酸单钠盐为原料,通过水热反应合成得到配位聚合物[Gd(SO_3-DCB)(H_2O)_5]_(n )(1)(NaH_2SO_3-DCB=5-磺酸基间苯二甲酸单钠盐)。单晶X射线衍射结果表明,化合物1属单斜晶系,P2_1/n空间群。Gd离子是九配位的,呈扭曲的单冠四方反棱柱配位构型。SO_3-DCB~(3-)配体的两个羧基螯合配位Gd离子,形成一维链状结构。化合物1的荧光发射峰在421 nm,是配体中苯环结构的特征发射峰。磁性测试表明,化合物1中的Gd离子之间存在铁磁耦合作用。     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

消光式核壳二聚体传感器的设计与光谱特性分析

根据ITO/Au纳米核壳二聚体粒子在生物医学领域的应用合理性,设计了一种实时检测生物液体的核壳二聚体探针消光式传感器;由偶极子理论推导出输出波长与外界环境折射率关系;利用MATLAB设计ITO/Au纳米核壳二聚体粒子结构;采用软件DDSCAT7.3结合离散偶极近似法,利用二聚体有效半径模拟计算了300~950nm可见光到红外光波段不同核壳比、二聚体间距、以及不同介质折射率的消光光谱;根据传感芯片折射率与偶极共振、耦合八级共振的响应关系得出ITO/Au二聚体的折射率灵敏特性。与传统Ag/Au核壳纳米粒子相比,ITO/Au纳米核壳二聚体结构引入了可作为传感芯片灵敏性自参考参数的耦合八级共振峰,同时ITO/Au二聚体结构的折射率灵敏度可达到419nm/RIU。这些工作及其结果对制作消光式传感器具有重要的意义。     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

Ru-Fe二元金属纳米粒子对氧还原的电催化性能

在1,6-己二醇溶剂中,以Ru3(CO)12和Fe3(CO)12为原料,采用低温回流方法合成了Ru-Fe纳米粒子催化剂。利用扫描电镜(SEM)、X射线衍射仪(XRD)和电化学技术表征了催化剂的物理特征和电催化性能.催化剂粉末以六方结构的Rux簇为主相,呈现出高度均匀而聚集的纳米颗粒特征.在0.5mol/L H2SO4溶液中,Ru-Fe催化剂对氧还原反应(ORR)的电催化活性高于Rux,主要归因于d电子从Ru原子到Fe原子的转移过程.