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对以本征Si及重掺杂p型和n型Si作为中间层的Fe/Si多层膜的层间耦合进行研究,并通过退火,增大Fe,Si之间的扩散,分析界面扩散对层间耦合的影响. 实验结果表明,层状结构良好的制备态的多层膜,Fe,Si之间也存在一定程度的扩散,它是影响层间耦合的 主要因素,远远超过了半导体意义上的重掺杂,使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现,在一定范围内增大Fe,Si之间的扩散,即使多层膜的层状结构已经有了相当的退化,Fe/Si多层膜的反铁磁耦合强度基本保持不变.
关键词:
Fe/Si多层膜
层间耦合
界面扩散 相似文献
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Organic quantum well and superlattice characteristics in quasi-one-dimensional multiblock copolymers
A tight-binding calculation was presented to describe multiblock copolymers, such as [...-(PA)x-(PPP)y-...] composed of PA (polyacetylene) and PPP (poly(p-phenylene). It is found that a copolymer has a quantum well and superlattice characteristics, and evident is the effect of the composite lengths, the interfacial couplings and the electron-phonon interactions on the electronic properties of a copolymer. The quantum tunneling, the Franz-Keldysh effect and the quantum confinement can be generated under an applied electric field. These results were compared to those of traditional inorganic quantum well and superlattice systems. 相似文献
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本文根据晶场理论计算了α-Fe_2O_3的单离子磁晶各向异性。采用点电荷模型,计及近邻及次近邻对晶场的贡献,并考虑到近邻O~(2-)离子对次近邻Fe~(3+)离子的电屏蔽效应,在六级微扰近似下,得到单离子各向异性场H_(si)=102.3×10~2Oe。这一结果结合Artman等人对磁偶极各向异性的计算,导出了α-Fe_2O_3的Morin转变温度T_M=261K,与实验很好地符合。对于低浓度掺杂的α-(Fe_(1-n)Al_n)_2O_3采用线性近似原理,得出了Morin转变温度随n的变化关系。这一结果不但解释了现有的实验事实,而且预示了Morin转变温度随n变化的规律。 相似文献
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We give a brief introduction to the oxide (ZnO, TiO2, In2O3, SnO2, etc.)-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors. 相似文献
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Oscillation of coercivity between positive and negative in MnxGe1-x:H ferromagnetic semiconductor films 下载免费PDF全文
Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics. 相似文献