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本文针对坡莫合金椭圆形盘中的磁涡旋结构, 采用微磁学模拟与傅里叶分析相结合的技术研究了磁涡旋自旋波的本征激发模式. 通过沿样品短轴方向施加一面内方向的脉冲磁场, 观察到一系列方位角自旋波模式. 观察到的自旋波模式具有两重对称性, 可以通过C2群理论来进行类型的划分. 此外, 自旋波模式的频率随着方位角指标的变化而线性增加. 模拟结果显示样品的平均交换能量密度明显的高于平均静磁能量密度; 局域交换能量密度主要集中在涡核初始位置, 而局域静磁能量密度主要分布在长轴附近. 交换作用对受限于铁磁薄膜椭圆盘中的单个涡旋态的能量要起主导作用, 从而导致方位角自旋波模式频率随着方位角指标的增加而增加. 相似文献
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针对坡莫合金纳米圆盘中的单个磁涡旋结构,采用微磁学模拟研究了磁涡旋极性翻转过程中的局域能量密度.磁涡旋的极性翻转通过与初始涡旋极性相反的涡旋与反涡旋对的生成,以及随后发生的反涡旋与初始涡旋的湮没来实现.模拟结果显示当纳米圆盘样品中局域能量密度的最大值达到一临界值时,磁涡旋将会实现极性翻转,其中交换能起主导作用.基于涡旋极性翻转过程中出现的三涡旋态结构,应用刚性磁涡旋模型对局域交换能量密度进行了理论分析.通过刚性磁涡旋模型得到的磁涡旋极性翻转所需的局域交换能量密度的临界值与模拟结果符合得较好. 相似文献
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Oscillation of coercivity between positive and negative in MnxGe1-x:H ferromagnetic semiconductor films 下载免费PDF全文
Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics. 相似文献
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Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect. 相似文献
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