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Enhanced photoresponse performance in Ga/Ga_2O_3 nanocomposite solar-blind ultraviolet photodetectors 下载免费PDF全文
In the present work, we explore the solar-blind ultraviolet(UV) photodetectors(PDs) with enhanced photoresponse,fabricated on Ga/Ga_2O_3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2 O3/Ga/Ga_2O_3 structures, Ga/Ga_2O_3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 p A at 10-V bias, a very high light-to-dark ratio of ~ 8 × 10~5, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of ~ 220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics. 相似文献
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We have carried out first-principle calculations of Mg adsorption on
Si(111) surfaces. Different adsorption sites and coverage effects
have been considered. We found that the threefold hollow adsorption
is energy-favoured in each coverage considered, while for the clean
Si(111) surface of metallic feature, we found that 0.25 and 0.5 ML
Mg adsorption leads to a semiconducting surface. The results for the
electronic behaviour suggest a polarized covalent bonding between
the Mg adatom and Si(111) surface. 相似文献
54.
CdSe/CdZnSe超晶格的激子光学性质的研究 总被引:2,自引:2,他引:0
用分子束外延法在GaAs衬底上生长了CdSe/Cd0.65Zn0.35Se超晶格结构。利用X射线衍射(XRD)、77K下变密度激发的光致发光光谱和变温度光致发光光谱研究了CdSe/CdZnSe超晶格结构和激光复合特性,在该材料中观测到激子-激子散射发射峰,变密度激发光致发光光谱和谱温度光致发光光谱证实了这一现象,激子发射峰的线宽随着温度的升高而展宽,低温时发光峰的宽度主要是由合金组分和阱垒起伏引起的,没温时激子线宽展宽是由于激子与纵光学声子和离化的施主杂质间的散射作用引起的,光致发光的强度随着温度的升高而降低,这主要是由激子的热离化造成的,也就是说,热激发使得电子或空穴由阱中跃迁至垒上。 相似文献
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利用扫描隧道显微镜研究了采用化学气相沉积法在铜箔表面生长出的高质量的六角氮化硼薄膜. 大范围的扫描隧道显微镜图像显示出该薄膜具有原子级平整的表面, 而扫描隧道谱则显示, 扫描隧道显微镜图像反映出的是该薄膜样品的隧穿势垒空间分布. 极低偏压的扫描隧道显微镜图像呈现了氮化硼薄膜表面的六角蜂窝周期性原子排列, 而高偏压的扫描隧道显微镜图像则呈现出无序和有序排列区域共存的电子调制图案. 该调制图案并非源于氮化硼薄膜和铜箔衬底的面内晶格失配, 而极有可能来源于两者界面处的氢、硼和/或氮原子在铜箔表面的吸附所导致的隧穿势垒的局域空间分布. 相似文献
56.
Temperature dependence of Cu2O orientations in the oxidation of Cu(111)/ZnO(0001) by oxygen plasma 下载免费PDF全文
The role of temperature on the oxidation dynamics of Cu2O on ZnO (0001) was investigated during the oxidation of Cu (111)/ZnO (0001) by using oxygen plasma as the oxidant. A transition from single crystalline Cu2O (111) orientation to micro-zone phase separation with multiple orientations was revealed when the oxidation temperature increased above 300°C. The experimental results clearly show the effect of the oxidation temperature with the assistance of oxygen plasma on changing the morphology of Cu (111) film and enhancing the lateral nucleation and migration abilities of cuprous oxides. A vertical top-down oxidation mode and a lateral migration model were proposed to explain the different nucleation and growth dynamics of the temperature-dependent oxidation process in the oxidation of Cu (111)/ZnO (0001). 相似文献
57.
Temperature dependence of Cu20 orientations in the oxidation of Cu (111)/ZnO (0001) by oxygen plasma 下载免费PDF全文
The role of temperature on the oxidation dynamics of Cu20 on ZnO (0001) was investigated during the oxidation of Cu (111)/ZnO (0001) by using oxygen plasma as the oxidant. A transition from single crystalline Cu20 (111) orientation to micro-zone phase separation with multiple orientations was revealed when the oxidation temperature increased above 300 ~ C. The experimental results clearly show the effect of the oxidation temperature with the assistance of oxygen plasma on changing the morphology of Cu (111) film and enhancing the lateral nucleation and migration abilities of cuprous oxides. A vertical top-down oxidation mode and a lateral migration model were proposed to explain the different nucleation and growth dynamics of the temperature-dependent oxidation process in the oxidation of Cu (lll)/ZnO (0001). 相似文献
58.
Thermal stability of Mg2Si epitaxial film formed on Si(111) substrate by solid phase reaction 下载免费PDF全文
A single crystalline Mg2 Si film was formed by solid phase reaction(SPR) of a Si(111) substrate with an Mg overlayer capped with an oxide layer(s),which was enhanced by post annealing from room temperature to 100 ℃in a molecular beam epitaxy(MBE) system.The thermal stability of the Mg2 Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300℃,450℃ and 650 ℃,respectively.The Mg2 Si film stayed stable until the annealing temperature reached 450 ℃ then it transformed into amorphous MgO x attributed to the decomposition of Mg2 Si and the oxidization of dissociated Mg. 相似文献
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STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface 下载免费PDF全文
Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched D B steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101}-faceted pits to multi-faceted pits. 相似文献