STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface |
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| Authors: | Xu Mao-Jie Jeyanthinath Mayandi Wang Xue-Sen Jia Jin-Feng Xue Qi-Kun and Dou Xiao-Ming |
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| Affiliation: | Institute of Optical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; Department of Physics, National University of Singapore, Lower Kent Ridge Road, 119260, Singapore; Department of Physics, Tsinghua University, Beijing 100084, China; School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China |
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| Abstract: | Pit formation and surface morphological evolution in Si(001) homoepitaxy are investigated by using scanning tunneling microscopy. Anti-phase boundary is found to give rise to initial generation of pits bound by bunched DB steps. The terraces break up and are reduced to a critical nucleus size with pit formation. Due to anisotropic kinetics, a downhill bias diffusion current, which is larger along the dimer rows through the centre area of the terrace than through the area close to the edge, leads to the prevalence of pits bound by {101} facets. Subsequent annealing results in a shape transition from {101}-faceted pits to multi-faceted pits. |
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| Keywords: | pit facet homoepitaxy Si(001) |
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