Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm 1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb+ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.     

湿法刻蚀对Si基片孔点阵及ZnO外延薄膜周期形貌的影响

利用射频等离子体辅助分子束外延法,在刻有周期性孔点阵结构的Si衬底上生长了ZnO二维周期结构薄膜,系统研究了湿法化学刻蚀对孔形点阵Si(100),Si(111)基片表面形貌的影响,以及两种初底上ZnO外延薄膜的结晶质量与周期形貌的差异.X射线衍射及扫描电子显微测试结果表明：Si (111)衬底上生长出的ZnO二维周期结构薄膜具有较好的结晶质量与较好的周期性表面形貌.该研究结果为二维周期结构的制备提供了一种新颖的方法. 关键词： ZnO 分子束外延 Si 湿法刻蚀     

不同硅晶面指数上的类倒金字塔结构研究与分析

晶体硅作为一种重要的半导体材料,在集成电路、太阳能电池等方面具有广泛的应用.基于各向异性的刻蚀方法,不同晶面指数的硅都可以在表面形成由{111}晶面族组成的正/倒金字塔.本文基于{111}晶面族与（abc）晶面相交构成类倒金字塔结构的特性,建立了硅的晶面指数（abc）与所形成的类倒金字塔结构的数学模型.将硅的晶面指数（abc）分成0≤a≤b<c,0≤a<b=c,a=b=c三种情况进行讨论,分别得到不同晶面指数的类倒金字塔结构.实验结果的扫描电子显微镜图证实了理论计算的准确性.晶面指数与类倒金字塔结构具有一一对应的关系,因此可以根据各向异性刻蚀后的类倒金字塔结构,进行硅的晶面指数进行检测.     

氢钝化对硅纳米晶发光强度的影响

通过热蒸发方法在单晶硅衬底上沉积了SiO/SiO₂超晶格样品,在氮气保护下对样品进行高温退火,得到硅纳米晶/SiO₂超晶格结构。随后将该结构样品分别注入3.0×1014和3.0×1015 cm-2两种剂量的H+。通过对样品的光致发光光谱的分析发现,H+注入后未经过二次退火的样品发光强度急剧下降;二次退火后的样品,随着退火温度的升高,发光强度逐渐增强;注入足够剂量的H+,其发光强度可以远远超过未注入时的发光强度。研究表明,样品发光强度的变化取决于样品内部缺陷面密度的改变,而缺陷面密度是由氢离子的注入剂量和注入后再退火的温度等因素决定的。     

Temperature dependence of Cu20 orientations in the oxidation of Cu （111）/ZnO （0001） by oxygen plasma

The role of temperature on the oxidation dynamics of Cu20 on ZnO （0001） was investigated during the oxidation of Cu （111）/ZnO （0001） by using oxygen plasma as the oxidant. A transition from single crystalline Cu20 （111） orientation to micro-zone phase separation with multiple orientations was revealed when the oxidation temperature increased above 300 ~ C. The experimental results clearly show the effect of the oxidation temperature with the assistance of oxygen plasma on changing the morphology of Cu （111） film and enhancing the lateral nucleation and migration abilities of cuprous oxides. A vertical top-down oxidation mode and a lateral migration model were proposed to explain the different nucleation and growth dynamics of the temperature-dependent oxidation process in the oxidation of Cu （lll）/ZnO （0001）.     

Temperature dependence of Cu2O orientations in the oxidation of Cu（111）/ZnO（0001） by oxygen plasma

The role of temperature on the oxidation dynamics of Cu2O on ZnO (0001) was investigated during the oxidation of Cu (111)/ZnO (0001) by using oxygen plasma as the oxidant. A transition from single crystalline Cu2O (111) orientation to micro-zone phase separation with multiple orientations was revealed when the oxidation temperature increased above 300°C. The experimental results clearly show the effect of the oxidation temperature with the assistance of oxygen plasma on changing the morphology of Cu (111) film and enhancing the lateral nucleation and migration abilities of cuprous oxides. A vertical top-down oxidation mode and a lateral migration model were proposed to explain the different nucleation and growth dynamics of the temperature-dependent oxidation process in the oxidation of Cu (111)/ZnO (0001).