Bi12GeO20晶体的位错蚀斑与对称群

用化学浸蚀法系统的研究了Bi₁₂GeO₂₀晶体{100},{100},{111}等晶面独特浸蚀斑规律并用对称群理论进行分析.理论预示的蚀斑形态与实验结果符合很好.显示位错蚀斑是由{112}晶面组成,即晶体的惯态面为{112}.     

PbFe12O19单晶体中的位错蚀斑研究

应用50％HCl作为浸蚀剂,对助熔法生长的PbFe₁₂O₁₉单晶体的(0001)解理面进行了浸蚀,以显示位错蚀斑。根据蚀斑所具有的形态,将其进行了分类,并确定了各自对应的位错类型。应用Mathews等人提出的机制,解释了在(0001)基面上所观察到的位错蚀斑阵列。 关键词：     

Impurity effects of the Λhyperon in the hypernuclear systems ${}_{{\rm{\Lambda }}}^{25}\mathrm{Mg}$ and ${}_{{\rm{\Lambda }}}^{29}\mathrm{Si}$

Based on the beyond-mean-field Skyrme–Hartree–Fock model, impurity effects of the Λhyperon in the hypernuclear systems ${}_{\,{\rm{\Lambda }}}^{25}$ Mg and ${}_{\,{\rm{\Lambda }}}^{29}$ Si are investigated, respectively. Four cases, in which the Λhyperon occupies the single-particle orbitals ${\rm{\Lambda }}$[000]${\tfrac{1}{2}}^{+}$, ${\rm{\Lambda }}$[110]${\tfrac{1}{2}}^{-}$, ${\rm{\Lambda }}$[101]${\tfrac{3}{2}}^{-}$ and ${\rm{\Lambda }}$[101]${\tfrac{1}{2}}^{-}$, are focused. In each case, the potential energy surface and the energy curves projected on certain angular momenta are employed to show the influence of the Λhyperon on the nuclear core. Beside the shrinkage effect that is induced by the Λhyperon occupying the s_Λ orbital, it is found that the Λhyperon on the p_Λ orbital, ${\rm{\Lambda }}$[110]${\tfrac{1}{2}}^{-}$, drives the nuclear core toward a prolate shape, while the ones on the other two p_Λ orbitals, ${\rm{\Lambda }}$[101]${\tfrac{3}{2}}^{-}$ and ${\rm{\Lambda }}$[101]${\tfrac{1}{2}}^{-}$, drive the nuclear core toward an oblate shape. The energy spectra and the corresponding intra-band E2 transition rates for the rotational bands are given as a prediction for future experiments.     

Geometric and Crystallographic Characterization of WC Surfaces and Grain Boundaries in WC-Co Composites

Electron backscattered diffraction has been used to determine the orientation of WC crystals in a WC-Co composite and atomic force microscopy has been used to measure the shapes of planar sections of the same crystals. A stereological analysis has been used to determine that {101¯0} prism facets and the {0001} basal planes are the WC surfaces that are most frequently in contact with Co. Further, the WC habit is an approximately equiaxed trigonal prism bound by three prism facets and two basal facets. An analysis of 15,600 grain boundaries shows that certain interfaces occur with a frequency that is much higher than would be expected in a random distribution and that the grain boundary habit planes also have {101¯0} and {0001} orientations. Eleven percent of all the observed WC-WC interfaces are 90° twist boundaries about [101¯0]. Two types of boundaries with a 30° rotation about [0001], a twist and an asymmetric tilt, comprise 3% of the population.     

Morphologies of latent and etched heavy-ion tracks in {111} CaF2

Structure details of latent tracks created by U, Pb and Au ions (energies 6.9, 28.7 and 11.1?MeV/A, respectively) in {111} CaF₂ have been extracted by means of scanning force microscopy and transmission electron microscopy. The revealed structure has assisted in the interpretation of the etching behaviour of tracks created in {111} CaF₂ by 9.2?MeV/A Bi ions. In the latter experiments, irradiated fragments were immersed for short durations in a 3:1 10% HCl/96% H₂SO₄ solution and the morphology of the formed etch pits was derived by high-resolution scanning electron microscopy and scanning force microscopy. Three conclusions emerged. First, ion-induced surface hillocks exhibit no resistance against etchant attack. Second, the primary etching diameter of the track coincides with the nanometric width of the structurally altered track core. Third, the structure of the etch pits, 3-faced symmetric pyramidal depressions with {122} faces, indicates that etching across the track halo, a few tens of nanometers wide strained crystal, is dominated by surface energies of crystal faces.     

Observation of regular defects formed on the surface of PbTe thin films grown by molecular beam epitaxy

Regular shape defects on the surface of PbTe thin films grown by molecular beam epitaxy (MBE) were studied by scanning electron microscope (SEM). Two types of regular shape defects were observed on Te-rich PbTe films grown at substrate temperature T ≥ 235 °C with a beam flux ratio of Te to PbTe (R_f) to be 0.5 and at 280 °C with a R_f ≥ 0.4, which include cuboids and triangular pyramids. The formation mechanism of the observed regular shape defects is interpreted as following: They are the outcome of fast growth rate along {1 0 0} crystal planes that have the lowest surface energy and the enclosure of the {1 0 0} crystal planes. The formation of the regular shape defects in the growth of PbTe needs appropriate substrate temperature and Te-rich ambience. However, when R_f is decreased low enough to make the films slightly Pb-rich, triangular pits that originate from the insufficient glide of the threading dislocations along the main 〈1 1 0〉 {1 0 0} glide system of PbTe in Cottrell atmosphere, will be the main feature on the film surface.     

Growth of Ge islands on prepatterned Si (0 0 1) substrates

We report on the growth and properties of Ge islands grown on (0 0 1) Si substrates with lithographically defined two-dimensionally periodic pits. After thermal desorption and a subsequent Si buffer layer growth these pits have an inverted truncated pyramid shape. We observe that on such prepatterned substrates lens-like Ge-rich islands grow at the pit bottoms with less Ge deposition than necessary for island formation on flat substrates. This is attributed to the aggregation of Ge at the bottom of the pits, due to Ge migration from the pit sidewalls. At the later stages of growth, dome-like islands with dominant {1,1,3} or {15,3,23}, or other high-index facets [i.e. {15,3,20} facets] are formed on the patterned substrates as shown by surface orientation maps using atomic force microscopy. Furthermore, larger coherent islands can be grown on patterned substrates as compared to Ge deposition on flat ones.     

The topography of nickel crystals during the reaction towards Ni(CO)4; A field ion microscope study

The structural aspect of the formation of Ni(CO)₄ by the reaction of CO with solid nickel has been studied. The nickel initial state was a nearly hemispherical single crystal as prepared by field evaporation of a nickel field emitter tip. Field-free reaction of CO with the clean nickel surface took place at pressures up to 2 mbar, reaction times up to 45 h, and at a temperature of 373 K, which as a result from work by others was found optimum for highest rates of Ni(CO)₄ formation. Neon field ion imaging at 80 K after reaction with CO showed the crystal always in an intermediate state, which had the features: (1) Areas of {;111} were increased; (2) at half angles between a central (111) and peripherical {111} planes there were {110} planes flanked by {210}, and {100} flanked by {511}, respectively; (3) with the exception of the planes mentioned in feature (2), the remaining surface area was more than mono-atomically stepped. From these results and in accordance with the theory of crystal growth (Kossel, Stranski) and the theory of crystal dissolution (Lacmann, Franke, Heimann) a pure octahedron is expected to be the final state of the crystal. This implies that nickel atoms removed by the reaction are most frequently taken from 〈110〉 atom chains of the {111} planes.     

Physisorption and dissociative chemisorption of H2 on sub-nanosized Al$_{13}^{-}$ anion cluster: ab initio study

We have studied the interaction of Al₁₃^-_{13}^{-} anion cluster with H₂. Both the long range interaction and dissociative adsorption have been examined using the established correlated ab initio methods, MP2 and CCSD(T), in conjunction with the augmented correlation consistent basis sets up to aug-cc-pVTZ. The formation of the weakly bound (physisorbed) end-on anion complex Al₁₃^-_{13}^{-}...H₂ is predicted for the interacting Al...H distances of 3.95 ? with the H-H axis pointing towards the ‘hollow’ site of Al₁₃^-_{13}^{-} and binding energy (D_e)D_{e}) of 0.7 kcal/mol at the estimated complete basis set (CBS) limit of CCSD(T). The barrier height for H₂ dissociation on Al₁₃^-_{13}^{-} of 41.6 (42.9) kcal/mol calculated at the ZPVE-corrected CCSD(T)/aug-cc-pVTZ (estimated CCSD(T)/CBS) level is at least twice as large as that evaluated by us for a dissociative adsorption of H₂ on an open-shell Al₁₃ neutral cluster. To our knowledge, this report presents the first “benchmark” quality study of the physisorption and dissociative chemisorption of molecular hydrogen on Al₁₃^-_{13}^{-} anion cluster.     

Role of strain-dependent surface energies in Ge/Si(100) island formation

Formation energies for Ge/Si(100) pyramidal islands are computed combining continuum calculations of strain energy with first-principles-computed strain-dependent surface energies. The strain dependence of surface energy is critically impacted by the presence of strain-induced changes in the Ge {100} surface reconstruction. The appreciable strain dependencies of rebonded-step {105} and dimer-vacancy-line-reconstructed {100} surface energies are estimated to give rise to a significant reduction in the surface contribution to island formation energies.     

Secondary defects in low-energy As-implanted Si

14 /cm² dose of As ions followed by both isochronal and isothermal annealing. The elementary defects generated first during solid-phase epitaxial recovery of implantation-induced amorphous layers at temperatures of 550 °C and/or 600 °C are {311} defects 2–3 nm long. They are considered to be transformed into {111} and {100} defects after annealing at temperatures higher than 750 °C. These secondary defects show the opposite annealing behavior to the dissolution and growth by the difference of their depth positions at 800 °C. This phenomenon is explained by the diffusion of self-interstitials contained in defects. With regard to the formation and dissolution of defects, there is no significant difference between the effects of rapid thermal annealing (950 °C for 10 s) and furnace annealing (800 °C for 10 min). Received: 14 November 1997/Accepted: 16 November 1997     

Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface

The formation of dislocation-rich and dislocation-free silicon islands during growth in the absence of mechanical stresses has been studied by scanning tunneling microscopy. The rounded shape of islands obtained at growth temperatures of 400–500°C on the oxidized Si(111) surface is associated with the presence of dislocations within them. The transfer of atoms from the oxidized surface to the islands occurs due to the barrier of the potential energy at the SiO₂/Si boundary. The {111} and {311} facets dominate in the shape of the islands grown at 500–550°C. Their appearance indicates the absence of the threading dislocations in the islands and that the growth is limited by the stage of the nucleation of a new atomic layer.     

Si,GaAs和LiNbO3单晶的堵塞效应

我们利用背散射方法得到Si,GaAs和LiNbO₃单晶堵塞图,以及GaAs单晶{110},{100}和{112}面堵塞半角ψ_1/2值.并得到因离子注入受损伤Si片{110}面堵塞坑深度随注入剂量增加而变浅的结果。作为对实验装置和方法的检验,我们也得到了Si单晶堵塞图和测量了Si单晶{110},{111}和{100}晶面堵塞半角ψ_1/2值。 关键词：     

Observation of triangle pits in PbSe grown by molecular beam epitaxy

PbSe thin films on BaF₂ (1 1 1) were grown by molecular beam epitaxy with different selenium beam flux. Evolution of PbSe surface morphologies with Se/PbSe beam flux ratio (R_f) has been studied by atomic force microscopy and high-resolution X-ray diffraction. Growth spirals with monolayer steps on PbSe surface are obtained using high beam flux ratio, R_f ≥ 0.6. As R_f decreases to 0.3, nano-scale triangle pits are formed on the surface and the surface of PbSe film changes to 3D islands when R_f = 0. Glide of threading dislocations in 〈1 1 0〉{1 0 0}-glide system and Pb-rich atom agglomerations are the formation mechanism of spiral steps and triangle pits. The nano-scale triangle pits formed on PbSe surface may render potential applications in nano technology.     

High-resolution identification of ½⟨110⟩ stacking faults in epitaxial Ba0.3Sr0.7TiO3 thin films

The near-interface region of an epitaxial Ba_0.3Sr_0.7TiO₃ thin film grown on LaAlO₃ (001) was found to consist of a high density of ½?110? stacking faults bounded by partial dislocations. The stacking faults can extend over large distances (greater than 50 nm). Various possible atomic configurations of the faults were considered. The atomic structures of the faults were identified using high-resolution electron microscopy and simulation as well as energy-filtered imaging. The ½[101] and faults (where [001] is normal to the film plane) were found to lie predominately on the {100} and {110} planes. The ½lsqb;101] faults on (010), (110) or (1&1tilde;0) have never been observed before in perovskites. The stacking faults on [100] have a structure consisting of a double layer of edge-sharing TiO₆ octahedra. The excess of Ti was detected by energy-filtered imaging. The formation of the extended stacking faults is probably related to a small amount of excess Ti during the film deposition, which may originate from the non-stoichiometry of the ceramic targets BaTiO₃ and SrTiO₃. It is also enhanced by the misfit-induced compressive strain in the early stages of the film growth.     

Elasticity of lyotropic chromonic liquid crystals probed by director reorientation in a magnetic field

Using a magnetic Frederiks transition technique, we measure the temperature and concentration dependences of splay K_{1}, twist K_{2}, and bend K_{3} elastic constants for the lyotropic chromonic liquid crystal sunset yellow formed through noncovalent reversible aggregation of organic molecules in water. K_{1} and K_{3} are comparable to each other and are an order of magnitude higher than K_{2}. At higher concentrations and lower temperatures, K_{1} and the ratios K_{1}/K_{3} and K_{1}/K_{2} increase, which is attributed to elongation of self-assembled lyotropic chromonic liquid crystal aggregates, a feature not found in conventional thermotropic and lyotropic liquid crystals formed by covalently bound units of a fixed length.     

Surface modification of highly oriented pyrolytic graphite by reaction with atomic nitrogen at high temperatures

Dry etching of {0 0 0 1} basal planes of highly oriented pyrolytic graphite (HOPG) using active nitridation by nitrogen atoms was investigated at low pressures and high temperatures. The etching process produces channels at grain boundaries and pits whose shapes depend on the reaction temperature. For temperatures below 600 °C, the majority of pits are nearly circular, with a small fraction of hexagonal pits with rounded edges. For temperatures above 600 °C, the pits are almost exclusively hexagonal with straight edges. The Raman spectra of samples etched at 1000 °C show the D mode near 1360 cm⁻¹, which is absent in pristine HOPG. For deep hexagonal pits that penetrate many graphene layers, neither the surface number density of pits nor the width of pit size distribution changes substantially with the nitridation time, suggesting that these pits are initiated at a fixed number of extended defects intersecting {0 0 0 1} planes. Shallow pits that penetrate 1-2 graphene layers have a wide size distribution, which suggests that these pits are initiated on pristine graphene surfaces from lattice vacancies continually formed by N atoms. A similar wide size distribution of shallow hexagonal pits is observed in an n-layer graphene sample after N-atom etching.     

Cluster generation under pulsed laser ablation of zinc oxide

Neutral and cationic Zn _n O _m clusters of various stoichiometry have been produced by nanosecond laser ablation of ZnO in vacuum and investigated by time-of-flight mass spectrometry. Particular attention was paid to the effect of laser wavelength (in the range from near-IR to UV) on cluster composition. Under 193-nm laser ablation, the charged clusters are essentially substoichiometric with Zn_nO_n-1⁺\mathrm{Zn}_{n}\mathrm{O}_{n-1}^{+} and Zn_nO_n-3⁺\mathrm{Zn}_{n}\mathrm{O}_{n-3}^{+} being the most abundant series. Both sub- and stoichiometric cationic clusters are generated in abundance at 532- and 1064-nm ablation whose composition depends on the cluster size. The reactivity of small stoichiometric Zn_nO_n⁺\mathrm{Zn}_{n}\mathrm{O}_{n}^{+} clusters (n<11) toward hydrogen is found to be high, while oxygen-deficient species are less reactive. The neutral plume particles are mainly stoichiometric with Zn₄O₄ tetramer being a magic cluster. It is suggested that the Zn₄O₄ loss is the dominant fragmentation channel of large zinc oxide clusters upon electron impact. Plume expansion conditions under ZnO ablation with visible and IR laser pulses are shown to be favorable for stoichiometric cluster formation.     

Annealing embrittlement of Fe78Si9B13 (METGLAS-2605S2)

The ductile to brittle transition that occurs in amorphous Fe₇₈Si₉B₁₃ (METGLAS-2605S2) has been investigated using mechanical measurements over the temperature range 250–370 °C. The fracture toughness values, K _Ic , have been determined for a range of annealing times (5–30 min) and cooling rates of 15–45 °C/min. A pronounced ductile to brittle transition is observed around 310(10) °C although no obvious structural changes are evident as indicated by x-ray diffraction. Comparison of transmission and back-scattered conversion electron ⁵⁷Fe Mössbauer spectra for the bulk as-received ribbon in the ductile state ( $K_{Ic}=52~{\rm MPa} \cdot \sqrt{m}$ ) and the ribbon annealed to the brittle state ( $K_{Ic}\sim10~{\rm MPa} \cdot \sqrt{m}$ ) indicates magnetic texture effects in both the bulk and on the surface of these amorphous ribbons, related to the magnetostriction resulting from the quenched-in stress during the ribbon production process, and the ensuing stress-relief upon annealing.