中能重离子微束辐照装置的研制

微束辐照装置是将辐照样品的束斑缩小到微米量级, 能够对辐照粒子进行准确定位和精确计数的实验平台, 是开展辐照材料学、辐照生物学、辐照生物医学以及微加工的有力工具. 中国科学院近代物理研究所(IMP)正在研制中能重离子微束辐照装置. 该装置以兰州重离子加速器(HIRFL)系统提供的中能和低能重离子束流为基础, 采用磁聚焦方式形成微米束. 束运线上两台铅垂方向的偏转磁铁辅以四极磁铁构成对称消色差系统, 将束流导向地下室, 再用高梯度的三组合四极透镜强聚焦形成微米束斑, 在真空中或大气中辐照样品. 它将成为国内首台能够提供从低能(10MeV/u)到中能(100MeV/u)的重离子微束的公共实验平台, 用于定位、定量照射靶物质(生物细胞、组织或其它非生物材料等), 有助于深入揭示重离子与物质相互作用的本质, 也为探索重离子辐照效应的应用提供新的手段.     

基于大功率LED的中子墙光刻度系统

光刻度系统是中子墙探测器系统的重要组成部分, 用于中子墙前端电子学的刻度和探测器工作性能变化的监测. 通过对基于发光二极管(LED)作为光源的中子墙光刻度系统方案开展了细致的测试研究, 确定了基于快脉冲驱动的大功率蓝光LED(3W)的中子墙光刻度系统方案, 对中子墙探测单元进行了初步刻度测试, 刻度结果能很好地满足光刻度要求, 表明对于快塑料闪烁体探测器该方案是一种较为理想的方案.     

碳离子的光谱和能级寿命的测定

利用束箔技术研究能量为１１０ｋｅＶ的Ｃ＋离子与厚度为８．５μｇ／ｃｍ２的碳箔相互作用激发放出的辐射光，这些光经鉴定主要来自ＣⅠ－ＣⅢ离子的激发辐射光。测量顺着箔后的激发辐射光的衰变曲线，得到几条较强谱线的能级寿命     

高电离态Ti原子EUV光谱的实验研究

在中国原子能研究院HI-13串列加速器上用束-箔技术完成了80 MeV Ti离子和C箔相互作用产生的高电离态离子谱观测,与用激光等离子体技术的实验结果做了比较，大多数谱线与激光等离子体技术的实验结果有较好的符合，有3条谱线是未观测到的.这几条谱线为ⅩⅧ 13.406，ⅩⅧ 14.987，17.439nm, 属于2s2p^{2 4}P_3/2—2p^{3 2}D_3/2, 2s2p^{2 1}S₀—2sp^{3 1}P₁, 4p ¹P₀—5d ¹P₁跃迁. 关键词： 串列加速器 高电荷态原子 激发光谱     

高剥离态离子Ni跃迁谱线

在中国原子能科学研究院HI-13串列加速器上，用束箔光谱学方法测量了45MeV和70MeV Ni的光谱，33条谱线已归类为镍的类镁离子跃迁。     

微束辐照装置及其在生物和材料领域中的应用

自从20世纪50年代开始利用微束辐照生物活细胞以来,由于微束独特的辐照特征, 其在生物学、 材料学、 生物医学、航空航天科学、环境科学、地质学、微加工等领域得到了广泛的应用。 在前人大量研究的基础上, 对微束装置及其应用进行总结概括。 展望了微束的发展趋势并简单介绍中国科学院近代物理研究所正在兴建的中高能重离子微束辐照装置。 Collimated proton microbeam has been used to irradiate the biological living cells since 1850s. Due to its unique characteristic in irradiation, microbeam has been extensively applied to many research fields,such as biology, material science, biomedicine,aeronautics and stronautics, environmental science, geology,micromachining and so on. Based on the much research of predecessors, the microbeam facilities and their corresponding applications are summarized in this paper. At last,prospects on the development trend of microbeam are made, and the intermediate energy and high energy heavy ion microbeam irradiation facility being constructed at the Institute of Modern Physics of Chinese Academy of Sciences is briefly introduced.     

20—50MeV O5+离子引起Au的L壳层X射线产生截面研究

在北京13 MV串列加速器上利用20—50MeV O⁵⁺离子研究Au的L壳层X射线产生截面. 实验结果表明σ（Ll）/σ（Lα） ,σ（Lβ）/σ（Lα） 和σ（Lγ）/σ（Lα）与EＣＰSSR理论计算结果符合比较好.在实验中由于较高的能量,在能量点存在能移现象. 关键词： 产生截面 ECPSSR X射线     

Design of the IMP microbeam irradiation system for 100 MeV/u heavy ions

A state-of-the-art high energy heavy ion microbeam irradiation system is constructed at the Institute of Modern Physics of the Chinese Academy of Sciences. This microbeam system operates in both full current intensity mode and single ion mode. It delivers a predefined number of ions to pre-selected targets for research in biology and material science. The characteristic of this microbeam system is high energy and vertical irradiation. A quadrupole focusing system, in combination with a series of slits, has been designed to optimize the spatial resolution. A symmetrically achromatic system leads the beam downwards and serves simultaneously as an energy analyzer. A high gradient quadrupole triplet finally focuses a C^6＋ ion beam to 1 μm in the vacuum chamber within the energy range from 10 MeV/u to 100 MeV/u. In this paper, the IMP microbeam system is described in detail. A systematic investigation of the ion beam optics of this microbeam system is presented together with the associated aberrations. Comparison is made between the IMP microbeam system and the other existing systems to further discuss the performance of this microbeam. Then the optimized initial beam parameters are given for high resolution and high hitting efficiency. At last, the experiment platform is briefly introduced.     

深亚微米SRAM质子单粒子翻转实验研究

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou) 加速出的H2 分子打靶产生能量为10 MeV 的质子,研究了特征尺寸为0.5/0.35/0.15 μm体硅和绝缘体上硅(SOI) 工艺静态随机存储器(SRAM) 的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI 工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI 工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CREME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset (SEU) is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 MeV proton for static random access memory (SRAM) of 0.5, 0.35 and 0.15 m feature size is carried out on HeavyIon Research Facility in Lanzhou for the rst time. The experimental results show that proton induced SEUs in submicron and deep-submicron (SRAMs) are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deep-submicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.     

单电离态Kr原子强跃迁能级振子强度的研究

阐述了用束-箔方法通过测量单电离态Kr原子强跃迁谱线的能级寿命来 确定振子强度f-值的方法,并对确定出的强跃迁谱线的能级吸收振子强度进行简要讨 论。