食源性抗生素快速检测技术研究进展

抗生素的持续低剂量暴露对婴幼儿的肠道菌群发育具有重要影响,进而影响婴幼儿的免疫系统及体重,因此对于孕产妇及婴幼儿这些特殊人群,需要关注食源性抗生素的摄入情况。常见的食源性抗生素包括β-内酰胺类,喹诺酮类,磺胺类和四环素类等,世界卫生组织(WHO)和粮食及农业组织(FAO)为食源性动物相关组织建立了药物残留限量标准(MRL)。目前已有多种抗生素残留的分析方法,包括免疫分析以及基于适配体和受体的分析方法。本文综述了多种食源性抗生素残留快速检测方法的原理和研究进展,并进行了展望。     

反常积分敛散性的根值判别法

由于积分与级数在理论上是统一的,因此有关正项级数的根式判别法可被推广以判别无穷限积分和瑕积分的敛散性.设f(x)是[a,+∞)上的非负函数,li mx→+∞xf(x)=ρ,则当ρ1时,反常积分∫a+∞f(x)dx收敛,而当ρ1时,反常积分∫a+∞f(x)dx发散;设f(x)是(a,b]上的非负函数,a为瑕点,xli→ma+(f(x))x-a=ρ,则当ρ1时,反常积分∫abf(x)dx收敛,而当ρ1时,反常积分∫baf(x)dx发散.     

Development of front-end readout electronics for silicon strip detectors

Front-end readout electronics have been developed for silicon strip detectors at our institute. In this system an Application Specific Integrated Circuit (ASIC) ATHED is used to realize multi-channel energy and time measurements. The slow control of ASIC chips is achieved by parallel port and the timing control signals of ASIC chips are implemented with the CPLD. The data acquisition is carried out with a PXI-DAQ card. The software has a user-friendly GUI developed with LabWindows/CVI in the Windows XP operating system. The test results show that the energy resolution is about 1.14% for alpha at 5.48 MeV and the maximum channel crosstalk of the system is 4.60%. The performance of the system is very reliable and is suitable for nuclear physics experiments.     

Field enhancement effect of metal probe in evanescent field

Field enhancement effect of metal probe in evanescent field, induced by using a multi-layers structure for exciting surface plasmon resonance （SPR）, is analyzed numerically by utilizing two-dimensional （2D） TM- wave finite difference time-domain （FDTD） method. In this letter, we used a flmdamental mode Gaussian beam to induce evanescent field, and calculated the electric intensity. The results show that compared with the nonmetal probe, the metal probe has a larger field enhancement effect, and its scattering wave induced by field enhancement has a bigger decay coefficient. The field enhancement effect should conclude that the metal probe has an important application in nanolithography.     

Influence of double A1N buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

<正>In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers.The buffer layer consists of a low-temperature(LT) AlN layer and a high-temperature(HT) AlN layer that are grown at 600℃and 1000℃,respectively.It is observed that the thickness of the LT-AlN layer drastically influences the quality of GaN thin film,and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film.The reason for the improved properties is discussed in this paper.     

碱性离子液体催化金属调节的甲基丙烯酸甲酯的电子转移活化原子转移自由基聚合

通过电子转移活化原子转移自由基聚合（AGET ATRP）,以2-溴代异丁酸乙酯（EBiB）为引发剂、维生素C（VC）为还原剂。 以碱性离子液体1-丁基-3-甲基咪唑氢氧化盐([Bmim][OH])分别和FeCl3·6H2O、CuCl2及RuCl3形成的配合物为催化剂催化甲基丙烯酸甲酯（MMA）的本体和溶液聚合。 催化量的[Bmim][OH]即可提高聚合速率,并且得到相对分子质量分布可控的PMMA（Mw/Mn为1.20～1.40）。 研究了[Bmim][OH]的加入量对聚合速率和相对分子质量分布的影响,3种催化体系催化性质通过循环伏安曲线表征。 扩链反应证明了碱性离子液体催化甲基丙烯酸甲酯的聚合为“活性”/可控自由基聚合。 碱性离子液体良好的溶解性使其成为活性自由基聚合的良好催化剂。     

基于大功率LED的中子墙光刻度系统

光刻度系统是中子墙探测器系统的重要组成部分, 用于中子墙前端电子学的刻度和探测器工作性能变化的监测. 通过对基于发光二极管(LED)作为光源的中子墙光刻度系统方案开展了细致的测试研究, 确定了基于快脉冲驱动的大功率蓝光LED(3W)的中子墙光刻度系统方案, 对中子墙探测单元进行了初步刻度测试, 刻度结果能很好地满足光刻度要求, 表明对于快塑料闪烁体探测器该方案是一种较为理想的方案.     

一种新型低噪声大动态范围小型前端电路的研制

设计了一款小型化、低噪声、大动态范围的前端处理电路,包括电荷灵敏前放、成形放大电路、单道脉冲幅度分析电路。前放的等效输入噪声≤1.5 keV,动态范围可达0~11 V,积分非线性 ≤0.11%。该电路为模块化电路,当前放与主放模块构成系统时,其分辨可以达到0.12%。当前放、主放模块与中国科学院近代物理研究所制作的离子注入型硅探测器构成系统时,采用239Pu 源进行测试,测得在5.157 MeV时的能量分辨约为0.82%;当主放、单道脉冲幅度分析模块与中国科学院近代物理研究所制作的碘化铯晶体探测器构成系统时,采用60Co 源进行测试,对于能量为1.332 MeV 的 射线,测得其能量分辨约为7.9%。该电路可用于半导体探测器、光电倍增管及电子倍增器等探测器信号的处理。目前,小型前端电路已经应用于中国科学院近代物理研究所自行研制的便携式盐湖卤水铀、钍、钾快速测量仪的原型样机,达到了预期效果。A small dimension front-end circuit with low noise and wide output dynamic range is introduced in this paper. The front-end circuit is made up of a charge sensitive preamplifier, a shaping circuit and a single channel pulse height analyzer. The equivalent input noise is under 1.5 keV. The output integral nonlinearity is less than 0.11% within the dynamic range of 011 V. And the circuit can be suitable for different conditions by different modules. The resolution was about 0.12% with the charge sensitive preamplifier and the main amplifier. The energy resolution of 0.82% was achieved for 5.157 MeV -rays from a 239Pu source with the charge sensitive preamplifier, the main amplifier and anion-injection silicon detector designed by the Institute of Modern Physics(IMP). An energy resolution of 7.9% was achieved for 1.332 MeV rays from a stationary 60Co source with the main amplifier, the single channel pulse height analyzer and a CsI scintillator detector designed by the IMP. The front-end circuit has the features of wide output dynamic range, simple structure, high level of integration,small dimensions, low noise, fast rise time of the output pulse and excellent stability. The front-end circuit can be applied to signal processing of semiconductor detectors, photomultiplier tubes and electrons multiplier. And the front-end circuit had been applied to a prototype of the portable rapid measuring instrument designed by IMP for measuring Uranium, Thorium and Potassium in the salt lake brine with goodtest result.     

远程激光诱导击穿光谱定量分析铝合金中的微量元素

基于纳秒Nd∶YAG激光器与卡塞格林式望远镜系统建立了一套25m远距离激光诱导击穿光谱测量装置,实现了对金属靶材的远距离测量.在此基础上,利用铝合金标样开展了金属中微量元素远程定量分析,研究了不同距离下铝合金中Pb、Fe、Ni三种元素的定量分析标定曲线与探测极限.实验结果表明,在5m至20m三种测量距离下,Pb、Fe、Ni三种元素定标曲线的相关性系数均高于0.97;尽管激光诱导击穿光谱的光谱信号随测量距离增加快速下降,但是检测限随测量距离增加并无显著改变,均在50ppm以下.     

磁控溅射参数对NiOx薄膜光学常数的影响

采用反应性磁控溅射法制备了NiOx薄膜,并结合椭圆偏振仪、XRD和XPS研究了溅射参量对其光学常量的影响.NiOx薄膜的光学常量随着O2/Ar流量比的增大而减小;热退火后,折射率增大而消光系数下降了50%;溅射功率越大折射率也越大,而工作气压越大折射率反而越小.这些变化分别与薄膜中存在间隙O和Ni空位、NiOx分解以及NiOx薄膜的致密度有关.