Simulating resonance-mediated two-photon absorption enhancement in rare-earth ions by a rectangle phase modulation

Improving the up-conversion luminescence efficiency of rare-earth ions via the multi-photon absorption process is crucial in several related application areas. In this work, we theoretically propose a feasible scheme to enhance the resonance-mediated two-photon absorption in Er~(3+) ions by shaping the femtosecond laser field with a rectangle phase modulation. Our theoretical results show that the resonance-mediated two-photon absorption can be decomposed into the on-resonant and near-resonant parts, and the on-resonant part mainly comes from the contribution of laser central frequency components, while the near-resonant part mainly results from the excitation of low and high laser frequency components.So, the rectangle phase modulation can induce a constructive interference between the two parts by properly designing the modulation depth and width, and finally realizes the resonance-mediated two-photon absorption enhancement. Moreover, our results also show that the enhancement efficiency of resonance-mediated two-photon absorption depends on the laser pulse width(or laser spectral bandwidth), final state transition frequency, and intermediate and final state absorption bandwidths. The enhancement efficiency modulation can be attributed to the relative weight manipulation of on-resonant and near-resonant two-photon absorption in the whole excitation process. This study presents a clear physical insight for the quantum control of resonance-mediated two-photon absorption in the rare-earth ions, and there will be an important significance for improving the up-conversion luminescence efficiency of rare-earthions.     

纳米“鸡蛋盒”的简易新制法

利用氧化铝模板,在聚苯乙烯玻璃化转变温度附近,采用气压方法抽取聚苯乙烯纳米膜,得到类似“鸡蛋盒”的纳米结构。 用原子力显微镜观察了聚苯乙烯纳米膜的表面形貌。 在最佳气体压力20 kPa下,可得到9个/μm2纳米“鸡蛋盒”,其深度约为15 nm,随压力增大或减小,单位面积上纳米“鸡蛋盒”的个数均降低。     

Crystal structure and ionic conductivity of Mg-doped apatite-type lanthanum silicates La10Si6-x Mgx O27-x（x=0–0.4）

Lanthanum silicates La10Si6-xMgxO27-x(x = 0–0.4) were prepared by solid state synthesis to investigate the effect of Mg doping on crystal structure and ionic conductivity. Rietveld analysis of the powder XRD patterns reveals that Mg substitution on Si site results in significant enlargement of channel triangles, favoring oxide-ion conduction. Furthermore,an increase of Mg concentration significantly influences the linear density of interstitial oxygen, which plays an important role in ionic conductivity. The Arrhenius plots of La10Si6-xMgxO27-x(x = 0–0.4) suggest that Mg-doped samples present higher conductivity and lower activation energy than non-doped La10Si6O27, and La10Si5.8Mg0.2O26.8exhibits the highest conductivity with a value of 3.0×10-2S ·cm-1at 700?C. Such conductive behavior agrees well with the refined results.The corresponding mechanism has been discussed in this paper.     

Observation and analysis of halo current in EAST

Plasma in a typically elongated cross-section tokamak （for example, EAST） is inherently unstable against vertical displacement. When plasma loses the vertical position control, it moves downward or upward, leading to disruption, and a large halo current is generated helically in EAST typically in the scrape-off layer. When flowing into the vacuum vessel through in-vessel components, the halo current will give rise to a large J × B force acting on the vessel and the in-vessel components. In EAST VDE experiment, part of the eddy current is measured in halo sensors, due to the large loop voltage. Primary experimental data demonstrate that the halo current first lands on the outer plate and then flows clockwise, and the analysis of the information indicates that the maximum halo current estimated in EAST is about 0.4 times the plasma current and the maximum value of TPF × Ih/Ip0 is 0.65, furthermore Ih/Ipo and TPF × Ih/Ipo tend to increase with the increase of Ip0. The test of the strong gas injection system shows good success in increasing the radiated power, which may be effective in reducing the halo current.     

超声速转子叶片非定常引射器流场特性数值模拟

采用计算流体力学方法,结合适当的边界条件,对超声速转子叶片非定常引射器进行了模拟。从结果可以看出:此类引射器内流态复杂,主气流出口斜激波干扰现象明显,叶片设计参数对引射器性能影响很大。叶片尾部的膨胀波有效诱导了被引射气流,在短距离内增强了气流混合,湍流效应对引射器性能的影响较小;叶片可维持自旋转,提升叶片转速可增强引射效率。最后,对引射器内的流动机理进行了探讨。     

Atomic structure and collision dynamics with highly charged ions

The research progresses on the investigations of atomic structure and collision dynamics with highly charged ions based on the heavy ion storage rings and electron ion beam traps in recent 20 years are reviewed. The structure part covers test of quantum electrodynamics and electron correlation in strong Coulomb field studied through dielectronic recombination spectroscopy and VUV/x-ray spectroscopy. The collision dynamics part includes charge exchange dynamics in ion-atom collisions mainly in Bohr velocity region, ion-induced fragmentation mechanisms of molecules, hydrogen-bound and van de Waals bound clusters, interference, and phase information observed in ion-atom/molecule collisions. With this achievements, two aspects of theoretical studies related to low energy and relativistic energy collisions are presented. The applications of data relevant to key atomic processes like dielectronic recombination and charge exchanges involving highly charged ions are discussed. At the end of this review, some future prospects of research related to highly charged ions are proposed.     

用于固态功放反射式宽带预失真器设计方法

提出了一种特定增益和相位补偿的反射式宽带线性化器设计方法,并通过此方法设计了一种补偿固态功率放大器失真特性的预失真电路。利用肖特基二极管产生非线性补偿,根据电路拓扑结构,利用matlab优化工具找到单频点处特定增益补偿和相位补偿特性的并联负载值,改变频点,并重复上述步骤,可进一步得到特定增益和相位补偿所需的并联负载随频率的变化关系（即Z_L～f曲线）。利用ADS仿真软件优化设计使二极管后端阻抗随频率的变化逼近Z_L-f曲线。仿真的电路增益补偿和相位补偿分别为6 dB和?40°。最终实测频率范围为9.4～11.4 GHz,增益扩张在3.9～4.4 dB,相位补偿在?32.3°～?41.5°,频带特性良好,并且相对带宽达到了19.2%。通过改变二极管直流偏置电压,还实现了补偿曲线的斜率可调。     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

由激光诱导荧光方法探测光碎片分子取向的理论研究

采用密度矩阵方法,推导了从激光诱导荧光(LIF)强度中抽出光碎片取向参数的表达式.光碎片的取向由分子态多极矩描述.用于解离母分子和激发碎片分子的激光均为线偏振光,而探测荧光为非偏振光.激光诱导荧光强度是光碎片分子初始态多极矩、线强度因子和解离-激发几何因子的函数.光碎片的取向参数可以由测量荧光偏振比和计算动力学因子而获得.     

普铝中Fe,Si元素的激光诱导击穿光谱测试条件及定量分析研究

为推广LIBS技术在电解铝行业中的应用，充分发挥其快速、免制样、多元素同时检测的优势。利用激光诱导击穿光谱技术首次对铝电解生产得到的普铝中Fe和Si元素进行测试研究，探索了合理的实验参数条件，在合理的实验条件基础上建立定标曲线并对普铝中Fe和Si元素进行定量分析，结合国标GB/T 7999-2015《铝及铝合金光电直读发射光谱分析方法》考察LIBS测试结果的准确性。以Nd∶YAG脉冲激光器基频1 064 nm激光作为光源激发等离子体，采用多通道光栅光谱仪和ICCD检测器检测、记录光谱信息。首先探测了LIBS光谱谱线，并对谱线进行了归属；综合分析，选取AlⅠ 266.04 nm，SiⅠ 288.15 nm与FeⅠ 259.92 nm作为分析谱线用于定量分析研究。分别研究了触发延迟时间、1Q延迟时间、激光器设定电压对光谱信号强度及信噪比SNR的影响。实验结果表明，触发延迟时间4 μs、1Q延迟时间170～190 μs、激光器设定电压560 V对于Si与Fe元素定量测试分析而言是较为合理的实验参数。根据谱线强度与元素浓度的关系，采用内标法建立了定标曲线，Si与Fe元素定标曲线中相关系数分别为0.919 72与0.952 11，其相对标准偏差（RSD）分别为7.25%与6.34%，说明谱线强度与元素浓度具有良好的线性关系，并基于此模型对12个样品进行了定量测试分析。将测试结果与光电直读发射光谱测得的结果进行比对，结果表明，Fe含量的相对误差绝对值在0~17.3%之间，Si含量相对误差绝对值在0~14.3%之间。依照国标GB/T 7999-2015《铝及铝合金光电直读发射光谱分析方法》中规定的实验室之间分析结果相对误差≤17%的规定，12个测试样品中，试样Si含量测试100%符合允许差要求，试样Fe含量测试91.7%符合允许差要求。该实验结果表明，LIBS技术在电解铝普铝Fe和Si元素检测中具有一定的推广利用价值。