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轮轨黏着是铁路运输中的关键基础性科学问题之一,而轮轨接触界面良好的黏着状态是列车安全和高品质运行的根本保障. 轮轨系统作为1个开放的系统,受到各种自然环境因素的影响,如湿度、温度、水、风沙甚至铁氧化物,而所有的这些环境因素都会影响轮轨接触界面的黏着状态和损伤行为. 本文中综述了水、湿度、温度和风沙等自然环境因素对轮轨黏着特性影响规律的研究进展,分析了自然环境因素下轮轨界面铁氧化物特征,重点探讨了自然环境因素对铁氧化物形成的影响及其对轮轨接触黏着特性的影响规律和作用机理,并提出了轮轨黏着的未来研究方向. 相似文献
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新型手性胺膦-铱体系催化芳香酮的不对称转移氢化 总被引:2,自引:0,他引:2
合成了含-CH_3取代基的PNNP型手性双胺双膦配体, 并采用核磁共振、质谱、红外光谱及圆二色光谱等方法对其进行了表征. 在异丙醇溶液中, 考察了该配体与[IrHCI_2(COD)]_2组成的手性胺膦-铱体系对多种芳香酮的不对称转移氢化性能. 结果表明, 该手性胺膦-铱体系是催化多种芳香酮不对称氢转移氢化的优秀催化剂. 在室温下, 用该体系催化1,1-二苯基丙酮时, 可得到99%的转化率和99% ee的对映选择性. 相似文献
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给出了内蒙古段黄河水平中总α,总β,^90Sr,^137Cs,^40K,^3H,^210Pb,^210Po,^238U,^232Th、^226Ra放射性水平,结果基本为正常水平,找出了污染源,为内蒙古段黄河水中放射性监督监测建立了全面的背景材料。 相似文献
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Crystal structure and ionic conductivity of Mg-doped apatite-type lanthanum silicates La10Si6-x Mgx O27-x(x=0–0.4) 下载免费PDF全文
Lanthanum silicates La10Si6-xMgxO27-x(x = 0–0.4) were prepared by solid state synthesis to investigate the effect of Mg doping on crystal structure and ionic conductivity. Rietveld analysis of the powder XRD patterns reveals that Mg substitution on Si site results in significant enlargement of channel triangles, favoring oxide-ion conduction. Furthermore,an increase of Mg concentration significantly influences the linear density of interstitial oxygen, which plays an important role in ionic conductivity. The Arrhenius plots of La10Si6-xMgxO27-x(x = 0–0.4) suggest that Mg-doped samples present higher conductivity and lower activation energy than non-doped La10Si6O27, and La10Si5.8Mg0.2O26.8exhibits the highest conductivity with a value of 3.0×10-2S ·cm-1at 700?C. Such conductive behavior agrees well with the refined results.The corresponding mechanism has been discussed in this paper. 相似文献
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Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells 下载免费PDF全文
Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices. 相似文献