FeCuCrVSiB单层和多层膜的横向巨磁阻抗效应

用射频溅射法制备了Fe_71.5Cu₁Cr_2.5V₄Si₁₂B₉单层膜和结构为(F/S)₃/M/(F/S)₃的多层膜，在制备过程中加72kA/m的纵向磁场.研究表明在制备过程中加磁场明显改善了材料的软磁性能，降低了材料的矫顽力.将样品经不同温度退火热处理后，发现经230℃退火1.5h的单层膜和多层膜具有最佳的软磁性能和最大的磁阻抗效应，单层膜最大横向磁阻抗比为37.5%，多层膜最大横向磁阻抗比高达277%.通过比较单层和多层膜磁阻抗效应随频率和磁场的变化，发现多层膜具有较低的磁阻抗效应的临界频率和峰值特征频率，和较大的磁阻抗变化率，而且有较低的横向磁阻抗效应的饱和场. 关键词： 铁基合金 多层膜 巨磁阻抗效应

Transverse giant magneto-impedance effect in FeCuCrVSiB single layered and multilayered films

Magnetic properties and giant magneto-impedance (GMI) effects of FeCuCrVSiB single layered and multilayered films with Ag as the central layer and SiO₂ as the isolating layers, which were prepared by radio frequency sputtering without field and with a magnetic field about 72kA/m along the films length, are investigated. The hysteresis loops of single layered films show that the samples deposited with a magnetic field possess excellent soft magnetic properties and the coercive force is only about 64A/m. After annealing at an optimum temperature of 230℃ for 1.5h, the maximum GMI ratios of single layered films are 37.5% in transverse field at the frequency of 13MHz, and the maximum GMI ratios of multilayered films is 277% at the frequency of 8.6MHz. The frequency dependence of the magneto-impedance indicates that the GMI effect in multilayered films can be very large even at relatively low frequencies.