| STRESS ANALYSIS IN CUBIC BORON NITRIDE FILMS BY X-RAY DIFFRACTION USING sin2 ψ METHOD |
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| 引用本文： | 张兴旺,岳金顺,陈光华,严辉,刘文君.STRESS ANALYSIS IN CUBIC BORON NITRIDE FILMS BY X-RAY DIFFRACTION USING sin2 ψ METHOD[J].物理学报(海外版),1998,7(1):61-67. |
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| 作者姓名： | 张兴旺 岳金顺 陈光华 严辉 刘文君 |
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| 作者单位： | (1)Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China; (2)Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China, Department of Physics, Lanzhou University, Lanzhou 730000, china; (3)Department of Physics, Lanzhou University, Lanzhou 730000, china |
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| 基金项目： | Project supported by the Natural Science Foundation of Beijing and the Science and Technology New Star Program of Beijing. |
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| 摘 要： | The boron nitride (BN) films containing cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) were prepared by radio frequency a ssisted thermal filament chemical vapor deposition. The stress and strain in BN films were investigated by X-ray diffraction analysis using the sin2 ψ method. The results showed that both c-BN and h-BN in the same film have similar values of elastic strain, however, the compressive stress in c-BN is much greater than that in h-BN for the same film. Both stress and strain gradually decre ased with the increase of substrate temperature (Ts). The effective stress in the films calculated by the effective stress model increased with the increase of Ts. Furthermore, the dependence of effective stress in the films on Ts was also investigated.
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| 收稿时间： | 1997-05-23 |
STRESS ANALYSIS IN CUBIC BORON NITRIDE FILMS BY X-RAY DIFFRACTION USING sin2$\psi$ METHOD |
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| Affiliation: | Department of Physics, Lanzhou University, Lanzhou 730000, china; Department of Applied Physics, Beijing Polytechnic University, Beijing 100022, China |
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| Abstract: | The boron nitride (BN) films containing cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) were prepared by radio frequency a ssisted thermal filament chemical vapor deposition. The stress and strain in BN films were investigated by X-ray diffraction analysis using the sin2$\psi$ method. The results showed that both c-BN and h-BN in the same film have similar values of elastic strain, however, the compressive stress in c-BN is much greater than that in h-BN for the same film. Both stress and strain gradually decre ased with the increase of substrate temperature (Ts). The effective stress in the films calculated by the effective stress model increased with the increase of Ts. Furthermore, the dependence of effective stress in the films on Ts was also investigated. |
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