Flexible electrically pumped random lasing from ZnO nanowires based on metal–insulator–semiconductor structure

Flexible electrically pumped random laser(RL) based on ZnO nanowires is demonstrated for the first time to our knowledge. The ZnO nanowires each with a length of 5 μm and an average diameter of 180 nm are synthesized on flexible substrate(ITO/PET) by a simple hydrothermal method. No obvious visible defect-related-emission band is observed in the photoluminescence(PL) spectrum, indicating that the ZnO nanowires grown on the flexible ITO/PET substrate have few defects. In order to achieve electrically pumped random lasing with a lower threshold, the metal–insulator–semiconductor(MIS) structure of Au/SiO_2/ZnO on ITO/PET substrate is fabricated by low temperature process. With sufficient forward bias, the as-fabricated flexible device exhibits random lasing, and a low threshold current of ～ 11.5 m A and high luminous intensity are obtained from the ZnO-based random laser. It is believed that this work offers a case study for developing the flexible electrically pumped random lasing from ZnO nanowires.     

Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2μm

The subband energy and lasing wavelength of compressively strained triangular Ino.53Ga0.47As/InAs quantum well are calculated and compared with the conventional rectangular ones with the same strain contents. The strain compensation using Al0.33In0.36Ga0.31As barrier is introduced. The results show that lasing wavelength can be extended dramatically to beyond 2.8μm by changing the energy band from the conventional rectangular shape to a triangular one, the realization of such a structure using molecular beam epitaxy technology is also discussed.     

Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing

InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) are fabricated by a thermal selective wet-oxidation confinement technique. Post-oxidation annealing in a nitrogen environment at high temperatures is then conducted to improve the performance of the oxide-confined InGaAs/GaAs VCSELs. The optimum post-oxidation annealing conditions are determined by changing the furnace temperature and annealing time. Compared with a unannealed laser device, the light output power increases by about 12%. An aging test is carried out to examine the reliability of the annealed oxide-confined VCSEL device. The temperature dependence of the lasing wavelength of the annealed oxide-confined VCSELs is also investigated.     

Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device

A broadband tunable grating-coupled external cavity laser is realized by employing a self-assembled InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) as the gain device. The SLD device is processed with a bent-waveguide structure and facet antireflection (AR) coating. Tuning bandwidths of 106 nm and 117 nm are achieved under 3-A and 3.5-A injection currents, respectively. The large tuning range originates essentially from the broad gain spectrum of self-assembled QDs. The bent waveguide structure combined with the facet AR coating plays a role in suppressing the inner-cavity lasing under a large injection current.     

Random lasing in dye-doped polymer dispersed liquid crystal film

A dye-doped polymer-dispersed liquid crystal film was designed and fabricated,and random lasing action was studied.A mixture of laser dye,nematic liquid crystal,chiral dopant,and PVA was used to prepare the dye-doped polymer-dispersed liquid crystal film by means of microcapsules.Scanning electron microscopy analysis showed that most liquid crystal droplets in the polymer matrix ranged from 30 μm to 40 μm,the size of the liquid crystal droplets was small.Under frequency doubled 532 nm Nd:YAG laser-pumped optical excitation,a plurality of discrete and sharp random laser radiation peaks could be measured in the range of 575–590 nm.The line-width of the lasing peak was 0.2 nm and the threshold of the random lasing was 9 m J.Under heating,the emission peaks of random lasing disappeared.By detecting the emission light spot energy distribution,the mechanism of radiation was found to be random lasing.The random lasing radiation mechanism was then analyzed and discussed.Experimental results indicated that the size of the liquid crystal droplets is the decisive factor that influences the lasing mechanism.The surface anchor role can be ignored when the size of the liquid crystal droplets in the polymer matrix is small,which is beneficial to form multiple scattering.The transmission path of photons is similar to that in a ring cavity,providing feedback to obtain random lasing output.     

A study of GaN MOSFETs with atomic-layer-deposited A1203 as the gate dielectric

Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layerdeposited Al₂O₃ gate dielectrics are fabricated.The device,with atomic-layer-deposited Al₂O₃ as the gate dielectric,presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm,which are better than those reported previously with Al₂O₃ as the gate dielectric.Furthermore,the device shows negligible current collapse in a wide range of bias voltages,owing to the effective passivation of the GaN surface by the Al₂O₃ film.The gate drain breakdown voltage is found to be about 59.5 V,and in addition the channel mobility of the n-GaN layer is about 380 cm2 /Vs,which is consistent with the Hall result,and it is not degraded by atomic-layer-deposition Al₂O₃ growth and device fabrication.     

Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs

The T-gate stem height of In Al As/In Ga As In P-based high electron mobility transistor(HEMT) is increased from165 nm to 250 nm. The influences of increasing the gate stem height on the direct current(DC) and radio frequency(RF)performances of device are investigated. A 120-nm-long gate, 250-nm-high gate stem device exhibits a higher threshold voltage(Vth) of 60 m V than a 120-nm-long gate devices with a short gate stem, caused by more Pt distributions on the gate foot edges of the high Ti/Pt/Au gate. The Pt distribution in Schottky contact metal is found to increase with the gate stem height or the gate length increasing, and thus enhancing the Schottky barrier height and expanding the gate length,which can be due to the increased internal tensile stress of Pt. The more Pt distributions for the high gate stem device also lead to more obvious Pt sinking, which reduces the distance between the gate and the In Ga As channel so that the transconductance(gm) of the high gate stem device is 70 m S/mm larger than that of the short stem device. As for the RF performances,the gate extrinsic parasitic capacitance decreases and the intrinsic transconductance increases after the gate stem height has been increased, so the RF performances of device are obviously improved. The high gate stem device yields a maximum ft of 270 GHz and fmax of 460 GHz, while the short gate stem device has a maximum ft of 240 GHz and the fmax of 370 GHz.     

Resonance response of a single-degree-of-freedom nonlinear vibro-impact system to a narrow-band random parametric excitation

The resonant response of a single-degree-of-freedom nonlinear vibro-impact oscillator with a one-sided barrier to a narrow-band random parametric excitation is investigated. The narrow-band random excitation used here is a bounded random noise. The analysis is based on a special Zhuravlev transformation, which reduces the system to one without impacts, thereby permitting the applications of random averaging over "fast" variables. The averaged equations are solved exactly and an algebraic equation of the amplitude of the response is obtained for the case without random disorder. The methods of linearization and moment are used to obtain the formula of the mean-square amplitude approximately for the case with random disorder. The effects of damping, detuning, restitution factor, nonlinear intensity, frequency and magnitude of random excitations are analysed. The theoretical analyses are verified by numerical results. Theoretical analyses and numerical simulations show that the peak response amplitudes will reduce at large damping or large nonlinear intensity and will increase with large amplitude or frequency of the random excitations. The phenomenon of stochastic jump is observed, that is, the steady-state response of the system will jump from a trivial solution to a large non-trivial one when the amplitude of the random excitation exceeds some threshold value, or will jump from a large non-trivial solution to a trivial one when the intensity of the random disorder of the random excitation exceeds some threshold value.     

Blue-Green Light Emission from a-SiCx：H-Based Fabry-Perot Microcavities

A Si-based novel Fabry-Perot microcavity device that can emit blue-green light at room temperature is proposed and fabricated, One of its Bragg reflectors consists of periodically stacked a-SiO2/a-Si：H layers deposited on the glass by plasma enhanced chemical vapour deposition, The other reflector is a sputtered Al film, The active region between both the reflectors is constructed by a p-type a-SiCx：H/intrinsic-type a-SiCx ：H junction fromwhich the electroluminescence （EL） is originated. The EL spectra of this device are recorded by RENISHAW RM2000, a sharp and strong EL peak at 483nm with FWHM of 20nm is observed when the device is driven by dc voltages of 8 V, 12 V and 18 V at room temperature. The intensity of EL increases with the applied voltage while the luminescence wavelength keeps unchanged. Compared with the EL spectra from the sample without the Bragg reflector, the luminescence intensity is about 10 times enhanced and the peak is narrowed greatly. The luminescence mechanism is analysed in detail.     

A method of generating random bits by using electronic bipolar memristor

The intrinsic stochasticity of resistance switching process is one of the holdblocks for using memristor as a fundamental element in the next-generation nonvolatile memory.However,such a weakness can be used as an asset for generating the random bits,which is valuable in a hardware security system.In this work,a forming-free electronic bipolar Pt/Ti/Ta2O5/Pt memristor is successfully fabricated to investigate the merits of generating random bits in such a device.The resistance switching mechanism of the fabricated device is ascribed to the electric field conducted electrons trapping/de-trapping in the deep-energy-level traps produced by the"oxygen grabbing"process.The stochasticity of the electrons trapping/detrapping governs the random distribution of the set/reset switching voltages of the device,making a single memristor act as a random bit in which the resistance of the device represents information and the applied voltage pulse serves as the triggering signal.The physical implementation of such a random process provides a method of generating the random bits based on memristors in hardware security applications.     

A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device

A new partial-SOI (PSOI) high voltage device structure called a CI PSOI (charge island PSOI) is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of the top silicon layer and the dielectric buried layer in which a series of equidistant high concentration n⁺-regions is inserted. Inversion holes resulting from the vertical electric field are located in the spacing between two neighbouring n⁺-regions on the interface by the force with ionized donors in the undepleted n⁺-regions, and therefore effectively enhance the electric field of the dielectric buried layer (E_I) and increase the breakdown voltage (BV), thereby alleviating the self-heating effect (SHE) by the silicon window under the source. An analytical model of the vertical interface electric field for the CI PSOI is presented and the analytical results are in good agreement with the 2D simulation results. The BV and E_I of the CI PSOI LDMOS increase to 631~V and 584~V/μ m from 246~V and 85.8~V/μ m for the conventional PSOI with a lower SHE, respectively. The effects of the structure parameters on the device characteristics are analysed for the proposed device in detail.     

Unification of the Kirchhoff approximation and the method of moment for optical wave scattering from the lossy dielectric Gaussian random rough surface

The optical wave scattering from one-dimensional （1D） lossy dielectric Gaussian random rough surface is studied. The tapered incident wave is introduced into the classical Kirchhoff approximation （KA）, and the shadowing effect is also taken into account to make the KA results have a high accuracy. The definition of the bistatic scattering coefficient of the modified KA and the method of moment （MOM） are unified. The characteristics of the optical wave scattering from the lossy dielectric Gaussian random rough surface of different parameters are analyzed by implementing MOM.     

Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

We report that fully transparent resistive random access memory(TRRAM) devices based on ITO/TiO2/ITO sandwich structure,which are prepared by the method of RF magnetron sputtering,exhibit excellent switching stability.In the visible region(400-800 nm in wavelength) the TRRAM device has a transmittance of more than 80%.The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage,while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability.The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO 2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.     

Low-Threshold and High-Power Oxide-Confined 850 nm AlInGaAs Strained Quantum-Well Vertical-Cavity Surface-Emitting Lasers Based on Intra-Cavity Contacted Structure

The low-threshold and high-power oxide-confined 850 nm AlInGaAs strained quantum-well （QW） vertical-cavity surface-emitting lasers （VCSELs） based on the intra-cavity contacted structure are fabricated. The threshold current of 0.1 mA for a 10-μm oxide-aperture device is obtained with the threshold current density of 0.127kA/cm^2. For a 22-μm oxide-aperture device, the peak optical output power reaches to 14.6mW at the current injection of 25 mA under the room temperature and pulsed operation with a threshold current of 2mA, which corresponds to the threshold current density of 0.526kA/cm^2. The lasing wavelength is 855.4nm. The full wave at half maximum is 2.2 nm. The analysis of the characteristics and the fabrication of VCSELs are also described.     

Solid-state green-light-emitting upconversion coherent random laser in macroporous LiNbO_3:Er

A solid-state green-light-emitting upconversion coherent random laser was realized by pumping macroporous erbium-doped lithium niobate with a 980 nm laser. The lasing threshold was determined to be about 40 k W∕cm~2.Above the threshold, the emission intensity increased sharply with the increasing pump intensity. Moreover, a narrow multi-peaks structure was observed in the green-light-emission band, and the positions of lasing lines were various at different angles. The results were the direct evidences of coherent random lasing emission from macroporous erbium-doped lithium niobate. These phenomena were attributed to the coexistence of upconversion emission and a multiple scattering feedback mechanism.     

Environment-dependent continuous time random walk

A generalized continuous time random walk model which is dependent on environmental damping is proposed in which the two key parameters of the usual random walk theory: the jumping distance and the waiting time, are replaced by two new ones: the pulse velocity and the flight time. The anomalous diffusion of a free particle which is characterized by the asymptotical mean square displacement <x²(t)>～t^α is realized numerically and analysed theoretically, where the value of the power index α is in a region of 0 < α < 2. Particularly, the damping leads to a sub-diffusion when the impact velocities are drawn from a Gaussian density function and the super-diffusive effect is related to statistical extremes, which are called rare-though-dominant events.     

Energy and Charge Transfer from Guest to Host in Doped Organic Electroluminescent Devices

The luminescence properties of doped organic electroluminescent devices are explained by means of a Hamiltonian model.The results show that there is a corresponding relation between the amount of transferred charge and the change of the energy originating from charge transfer,and the relation can be influenced by dopant concentration.As the amountof transferred charge increases,the total energy decreases and the luminescence intensity increases.Therefore,we deduce that the energy transfer from guest to host may be derived from the charge transfer.For a given organic electroluminescent device,the maximum value of the conductivity can be observed in a specific dopant concentration.The calculated results show that the greater the transferred charges,the higher the conductivities in doped organic electroluminescent devices.The results agree basically with experimental results.     

AlGaInAs/InP coupled-circular microlasers

AlGaInAs/InP coupled-circular microlasers with radius of 10- and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2×10 3 is estimated from 3-dB width of a minor peak near the threshold current. The mode characteristics are simulated by finite-difference time-domain technique for coupled- circular resonators. The results show that, in addition to the coupled modes, high-radial-order whispering gallery modes with travelling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide.     

Steering vector random error modification robust beamforming

The steering vectors estimated by the existing beamforming methods generally depart from their ground-truth values when they are inffuenced by both steering deviation and random error. To solve this problem, a steering vector random error modification robust beamforming method is proposed. The steering vector is divided into both inside and outside parts of the pre-defined sector feature subspace, and then the robust beamforming for steering deviation is employed to estimate the component of the...     

Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment

The influence of an N_2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor(HEMT) prepared by using a plasma-enhanced chemical vapor deposition(PECVD) system is presented.After the plasma treatment,the peak transconductance(g_m) increases from 209 mS/mm to 293 mS/mm.Moreover,it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device.From the analysis of frequency-dependent conductance,it can be seen that the trap state density(D_T) and time constant(τ_T) of the N20-treated device are smaller than those of a non-treated device.The results indicate that the N_2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device.