Skyrmion transport driven by pure voltage generated strain gradient

The magnetic skyrmion transport driven by pure voltage-induced strain gradient is proposed and studied via micromagnetic simulation. Through combining the skyrmion with multiferroic heterojunction, a voltage-induced uniaxial strain gradient is adjusted to move skyrmions. In the system, a pair of short-circuited trapezoidal top electrodes can generate the symmetric strain. Due to the symmetry of strain, the magnetic skyrmion can be driven with a linear motion in the middle of the nanostrip without deviation. We calculate the strain distribution generated by the trapezoidal top electrodes pair, and further investigate the influence of the strain intensity as well as the strain gradient on the skyrmion velocity. Our findings provide a stable and low-energy regulation method for skyrmion transport.     

A generalized model of TiO_x-based memristive devices and its application for image processing

Memristive technology has been widely explored, due to its distinctive properties, such as nonvolatility, high density,versatility, and CMOS compatibility. For memristive devices, a general compact model is highly favorable for the realization of its circuits and applications. In this paper, we propose a novel memristive model of TiO_x-based devices, which considers the negative differential resistance(NDR) behavior. This model is physics-oriented and passes Linn's criteria. It not only exhibits sufficient accuracy(IV characteristics within 1.5% RMS), lower latency(below half the VTEAM model),and preferable generality compared to previous models, but also yields more precise predictions of long-term potentiation/depression(LTP/LTD). Finally, novel methods based on memristive models are proposed for gray sketching and edge detection applications. These methods avoid complex nonlinear functions required by their original counterparts. When the proposed model is utilized in these methods, they achieve increased contrast ratio and accuracy(for gray sketching and edge detection, respectively) compared to the Simmons model. Our results suggest a memristor-based network is a promising candidate to tackle the existing inefficiencies in traditional image processing methods.     

金红石TiO_2中本征缺陷扩散性质的第一性原理计算

基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV.     

基于微芯片的透射电子显微镜的低温纳米精度电子束刻蚀与原位电学输运性质测量

利用微芯片制备技术制备了带有电极的原位电学薄膜芯片,并结合自制的原位透射电镜样品台,实现了低温下透射电子显微镜聚焦电子束对InAs纳米线的精细刻蚀以及不同温度下的原位电学性能测量.研究发现,随着刻蚀区域截面积的减小,纳米线的电导率也随之减小.当纳米线的截面积从大于10000 nm2刻蚀至约800 nm2时,纳米线电导的减小速率与截面积的减小具有线性关系.同时利用低温聚焦电子束刻蚀,在InAs纳米线上原位制备了一个10 nm的纳米点,并在77与300 K下对该纳米点进行了电学性能测量.通过测量发现在77 K时出现库仑阻塞效应,发生了电子隧穿现象;而300 K时,热扰动提供的能量使这种现象消失.     

单岛单电子晶体管的电导分析

基于单电子经典理论,本文通过分析得出了单岛单电子晶体管的源漏电导模型,并对其进行了详细的分析讨论.单岛单电子晶体管的源漏电导随着源漏电压的变化发生周期性的振荡衰减,并随着源漏电压的增大逐渐收敛于本征电导值.源漏电导的这种特性受温度、结电阻、结电容等参数的影响.分析结果表明,源漏电导分析模型对单电子晶体管的大规模应用具有非常重要的意义. 关键词： 单电子晶体管 电导 库仑振荡 库仑阻塞     

An improved memristor model for brain-inspired computing

Memristors, as memristive devices, have received a great deal of interest since being fabricated by HP labs. The forgetting effect that has significant influences on memristors' performance has to be taken into account when they are employed. It is significant to build a good model that can express the forgetting effect well for application researches due to its promising prospects in brain-inspired computing. Some models are proposed to represent the forgetting effect but do not work well. In this paper, we present a novel window function, which has good performance in a drift model. We analyze the deficiencies of the previous drift diffusion models for the forgetting effect and propose an improved model. Moreover,the improved model is exploited as a synapse model in spiking neural networks to recognize digit images. Simulation results show that the improved model overcomes the defects of the previous models and can be used as a synapse model in brain-inspired computing due to its synaptic characteristics. The results also indicate that the improved model can express the forgetting effect better when it is employed in spiking neural networks, which means that more appropriate evaluations can be obtained in applications.     

一种基于双栅材料的单极性类金属氧化物半导体碳纳米管场效应管设计方法

由于导电沟道-源/漏电极界面处可能发生的载流子带间隧穿,传统类金属氧化物半导体(MOS)碳纳米管场效应管呈现双极性传输特性,极大影响了器件性能的提高及其在电路中的应用.为获得具有理想单极性传输特性的类MOS碳纳米管场效应管,本文提出了一种基于双栅材料的器件设计方法.模拟结果表明,通过合理选取调节电极材料,在不影响器件亚阈值斜率的同时,该设计方法不仅能使开关电流比增大6—9个数量级,有效调节阈值范围,而且能有效消除传统类MOS碳纳米管场效应管的双极性传输特性.进一步研究表明,该设计所获得的器件性能提高与调节     

单层二硫化钼多相性质及相变的第一性原理研究

本文基于密度泛函的第一性原理,并引入范德瓦耳斯力修正,研究了单层二硫化钼2H,1T,ZT三种相的电学性质及相变原理.首先通过结构弛豫确定了三种相的几何结构,能带和态密度计算证实1T相具有金属性质,ZT相具有半导体性质,带隙为0.01 eV.然后结合变形势理论计算了2H和ZT相的迁移率,ZT相的迁移率高达104cm~2·V~(-1)·s~(-1),进一步拓展了单层二硫化钼的应用范围.最后通过对比三种相吸附锂原子结合能,计算2H-1T相变能量曲线,解释了引起二硫化钼相变的原因.本文的研究结果将对单层二硫化钼实验制备表征以及相关光电器件性能分析提供重要参考.     

Dependence of switching process on the perpendicular magnetic anisotropy constant in P-MTJ

We investigate the dependence of the switching process on the perpendicular magnetic anisotropy(PMA) constant in perpendicular spin transfer torque magnetic tunnel junctions(P-MTJs) using micromagnetic simulations. It is found that the final stable states of the magnetization distribution of the free layer after switching can be divided into three different states based on different PMA constants: vortex, uniform, and steady. Different magnetic states can be attributed to a trade-off among demagnetization, exchange, and PMA energies. The generation of the vortex state is also related to the non-uniform stray field from the polarizer, and the final stable magnetization is sensitive to the PMA constant. The vortex and uniform states have different switching processes, and the switching time of the vortex state is longer than that of the uniform state due to hindrance by the vortex.     

基于梯度掺杂策略的碳纳米管场效应管性能优化

双极性传输特性是制约碳纳米管场效应管(carbon nanotube field effect transistors,CNFETs)性能提高的一个重要因素.为降低器件的双极性传输特性并获得较大的开关电流比,提出了一种漏端梯度掺杂策略,该策略不仅适合于类MOS碳纳米管场效应管(C-CNFETs),同时也适合于隧穿碳纳米管场效应管(T-CNFETs).基于非平衡格林函数的数值研究结果表明,该策略不仅能有效降低器件的双极传输特性,而且能将器件开关电流比提高数个数量级.进一步研究发现,该掺杂策略在这两类碳纳米管 关键词： 梯度掺杂 带间隧穿 双极性传输 碳纳米管场效应管