声表面波低插入损耗滤波器的研制(Ⅱ)──横向耦合谐振滤波器

目前移动通讯设备对窄带低插损高阻带抑制的滤波器有极大需求，而横向模式耦合谐振滤波器是实现这些性能的最佳方案之一。在理论上，本文应用陈东培和Hartmann等提出的耦合模理论模型对这种滤波器进行了分析设计；在实验上，以ST石英为基底材料，设计制作了152．55MHz频率的器件，器件性能接近目前国外已报道同类器件的水平，最低插损达2．7dB，阻带抑制约60dB，相对带宽0．5%~0．75％。，并能获得平坦的通带。     

微波声学和微声器件的发展和应用

微波声学是一门新兴学科,十多年来发展迅速,并且已根据其原理发展出一系列新型的微声器件．本文简单地介绍了微声体波与表面波目前达到的水平,微波声子与电子、热声子、磁子、电子自旋量子以及核自旋量子等的相互作用以及它在研究固体方面的应用;表面声波的传播规律和表面波微声器件的现状及其发展前景;微声材料的现状及要求等．也指出了上述诸方面还存在的问题和其发展前途．重点放在表面声波及其器件方面．     

新型压电晶体四硼酸锂

 图为82毫米直径的新型压电晶体四硼酸锂.该新材料兼具高机电耦合系数和零延迟温度系数的特点,适用于高频、高稳定度和小型化的声表面波器件的制造,成为电子工业材料中的新秀.它的SAM器件(图右)应用于移动通讯装备上,如寻呼机、汽车电话、无线电话、家用袖珍电话等.九十年代移动通讯将成为信息社会中不可缺少的通讯工具.中国科学院上海硅酸盐所在国际上首创它的新生长技术并发展了其宏观完整生长理论,为四硼酸锂产业化生产奠定了坚实的技术基础.     

利用锥型换能器的宽带低损耗声表面波滤波器设计

分析锥型换能器的基本原则是把换能器沿孔径方向划分成足够多的通道来进行近似,设计制作的关键是加权技术和数据处理技巧。由于SPUDT的特性,把EWC型的SPUDT引入到锥型换能器对制作宽带、低损耗器件是十分有用的;我们在Y128°LN基片上采用一般型和SPUDT型锥型换能器制作了相对带宽约15%的声表面波滤波器,一个换能器采用“块加权”,另一个换能器采用抽指加权。文中给出了两种器件的实验结果,SPUDT型声表面波滤波器的插损仅7.5dB。     

时间延迟型声表面波无源传感器的无线访问

介绍了一种基于无源声表面波（ＳＡＷ）器件的无线传感器．作为敏感器件的 ＳＡＷ器件由作为换能器的 ＩＤ－Ｔａｇ和一组反射栅组成．由访问系统发射出的电磁波通过 ＩＤ－Ｔａｇ在 ＳＡＷ器件上激励起声表面波,此声表面波在器件表面传播,被ＳＡＷ器件本身状态参数调制后,反射回波再通过ＩＤ－Ｔａｇ转变成电磁波向空间发射．因此对访问系统接收到的回波信号进行分析即可得到被测量。即实现了无线传感．由于以ＳＡＷ器件为敏感元件可以研制各种各样的物理量、化学量传感器,这种无线访问传感系统可在各种场合得到应用．     

一种有效提高薄膜滤光片型密集波分复用器器件性能的方法及其实验研究

对光梳状滤波器加薄膜滤光片型模块制作密集波分复用器(DWDM)的两种应用方案进行了研究,提出了一种提高插损一致性、信道隔离度及减小串扰的结构方案。对新结构方案与常规结构方案进行了理论分析及实验研究,结果表明新结构可将级联次级峰由大于-30dB降至-50dB以下。用16波50GHz的密集波分复用器件拼接进行的实验表明最终器件的插损减小0．869dB,插损一致性减小2．005dB,相邻信道隔离度提高1．004dB,非相邻信道隔离度提高42．903dB．总串扰提高1．68dB。该方案不仅可以应用到光梳状滤波器与薄膜滤光片型模块拼接高性能的超密集波分复用器件．同样也可适用于阵列波导光栅等类型的密集波分复用器件中以降低工艺难度,提高性能指标。     

基于AlN声表面波滤波传感器器件的有限元仿真

声表面波器件是一种利用压电材料的压电效应与逆压电效应工作电子器件, 文章首先详细描述了声表面波器件的设计与仿真过程,运用有限元分析的方法分别计算了利用声表面波的 SAW 器件与利用体波的 BAW 器件的性能与各项参数,对相关的器件进行了计算分析,分别用上述方法研究了基于 AlN 薄膜的声表面波器件和悬臂梁结构的体波器件,推导得出了器件的电学导纳与频率之间的关系, 通过分析器件的导纳-频率曲线,推导出器件内部声波的模式以及合适的工作频率,最终得出在 IDT 周期为 8 微米的情况下,SAW 器件的理想工作频率是 0.7-1.95GHz,BAW 器件的理想工作频率在 0.6-3.2GHz 的结果。     

1GHz声表面横波谐振器的研究及应用

本文介绍声表面横波谐振器的设计及制作,并报导了我们研制的频率为１．１ＧＨｚ,插损３ｄＢ,有载Ｑ值大于２０００的声表面横波谐振器及其应用。     

锗酸铋声表面波沟槽栅脉冲压缩滤波器

声表面波沟槽栅脉冲压缩滤波器(RAC器件)是一种优良的色散延迟线.它利用声表面波在沟槽栅阵上的反射,形成色散时延,具有时延长、带宽大、寄生信号小、可以内加权、脉冲压缩性能好等特点.制作在锗酸铋材料上的RAC器件除这些特点外,由于声表面波速度比一般材料约低一倍,因而更适于制作小体积、大时延     

我国声表面波研究与发展

本文综述了我国声表面波研究简要发展历程及现状,指出了今后我国声表面波研究发展的重点。     

Scanning Michelson interferometer for imaging surface acoustic wave fields

A scanning homodyne Michelson interferometer is constructed for two-dimensional imaging of high-frequency surface acoustic wave (SAW) fields in SAW devices. The interferometer possesses a sensitivity of ~10(-5)nm/ radicalHz , and it is capable of directly measuring SAW's with frequencies ranging from 0.5 MHz up to 1 GHz. The fast scheme used for locating the optimum operation point of the interferometer facilitates high measuring speeds, up to 50,000 points/h. The measured field image has a lateral resolution of better than 1 mu;m . The fully optical noninvasive scanning system can be applied to SAW device development and research, providing information on acoustic wave distribution that cannot be obtained by merely electrical measurements.     

MOCVD法生长SAWF用ZnO/Diamond/Si多层结构

使用等离子体辅助MOCVD系统在金刚石,硅衬底上成功地制备了氧化锌多层薄膜材料,通过两步生长法对薄膜质量进行了优化。XRD测试显示优化后的样品具有c轴的择优取向生长,PL谱测试表明样品经优化后不仅深能级发射峰消失,同时紫外发射峰增强。对优化后的样品的表面测试显示出较低的表面粗糙度。比较氧化锌多层薄膜结构的声表面波频散曲线,ZnO薄膜声表面滤波器受膜厚和衬底材料的影响较大。当ZnO薄膜较薄时,在它上面的传播速度将与衬底上的传播速度接近,与其他衬底上生长的薄膜相比,以金刚石这种快声速材料为衬底的ZnO多层薄膜结构,声表面波滤波器的中心频率将提高1倍左右。     

Zno-SiO2-Si结构中压电薄膜C轴取向等参数对声表面波的影响

当ＺｎＯ－ＳｉＯ２－Ｓｉ结构中的ＺｎＯ薄膜Ｃ轴取向偏离基片法向时，将对声表面波传播速度，机电耦合系数等参量产生影响。本文对此问题进行了理论分析和数值计算；同时还讨论了本结构中影响声表面波束偏的一些参数。     

Development of human IgE biosensor using Sezawa-mode SAW devices

This paper reports Sezawa-mode surface acoustic wave (SAW) devices with via-isolated cavity to construct the allergy biosensor. To fabricate Sezawa-mode SAW devices, the RF magnetron sputtering method for the growth of piezoelectric ZnO thin films are adopted and influences of the sputtering parameters are investigated. The optimal substrate temperature of 300 °C, RF power of 120 W and sputtering pressure of 2 Pa were used to deposit piezoelectric ZnO films with a smooth surface, uniform grain size and strongly c-axis-orientated crystallization. A back-etched SAW resonator is used in this study. The wet etching of (100)-oriented silicon wafers is used to form a back-side cavity which is critical to the formation of a hopper cavity for holding bio-analytes. The remaining membrane structure silicon thickness was 25 μm. In this report, the chrome (Cr, 12 nm)/gold (Au, 66 nm) layer was initially deposited onto the sensing area of SAW devices as the binding layer for biochemical sensor. The resonance frequency of the Sezawa-mode SAW device is 1.497 GHz. The maximum sensitivity of the Sezawa-mode is calculated to be 4.44 × 10⁶ cm²/g for human immunoglobulin-E (IgE) detection. The stability for human IgE detection is calculated to be 80% and the variation of the stability ±3% was obtained after several tests.     

Novel method for photovoltaic energy conversion using surface acoustic waves in piezoelectric semiconductors

This paper presents a novel principle for photovoltaic (PV) energy conversion using surface acoustic waves (SAWs) in piezoelectric semiconductors. A SAW produces a periodically modulated electric potential, which spatially segregates photoexcited electrons and holes to the maxima and minima of the SAW potential. The moving SAW collectively transports the carriers with the speed of sound to the electrodes made of different materials, which extract electrons and holes separately and generate dc output. The proposed active design is expected to have higher efficiency than passive designs of the existing PV devices and to produce enough energy to sustain the SAW.     

Synthesis and analysis of SAW dispersive ladder transducers by the modified method of coupled modes

A method for the synthesis and analysis of SAW filters and delay lines that use dispersive ladderinterdigital transducers is described. A method for designing SAW devices that relies on modified equations forcoupled waves is proposed. A singular integral equation for the surface current density in the transducer’s electrodes is derived and solved. Theoretical data are compared with experimental results.     

Analytical and numerical modeling of resonant piezoelectric devices in China-A review

The results on theoretical and numerical modeling of resonant piezoelectric devices in China are reviewed. Solutions to dynamic problems of the propagation of bulk acoustic waves (BAW), surface acoustic waves (SAW), vibrations of finite bodies, and analyses of specific devices are discussed. Results from both the ultrasonics community and mechanics researchers are included. It is hoped that the paper will be useful for the understanding, communication and collaboration between Chinese and foreign scholars. The paper may also be helpful for bridging the gap between ultrasonics and mechanics researchers on piezoelectricity research. The paper contains 316 references.     

Transparent ZnO/glass surface acoustic wave based high performance ultraviolet light sensors

Surface acoustic wave(SAW) resonators are a type of ultraviolet(UV) light sensors with high sensitivity, and they have been extensively studied. Transparent SAW devices are very useful and can be developed into various sensors and microfluidics for sensing/monitoring and lab-on-chip applications. We report the fabrication of high sensitivity SAW UV sensors based on piezoelectric(PE) ZnO thin films deposited on glass substrates. The sensors were fabricated and their performances against the post-deposition annealing condition were investigated. It was found that the UV-light sensitivity is improved by more than one order of magnitude after annealing. The frequency response increases significantly and the response becomes much faster. The optimized devices also show a small temperature coefficient of frequency and excellent repeatability and stability, demonstrating its potential for UV-light sensing application.     

Surface acoustic wave devices and applications: 6. Oscillators — the next successful surface acoustic wave device?

This article covers the design, fabrication, performance, and applications of the SAW oscillator. The author sets out to show that this device has considerable commercial potential and will be the first SAW device to find widespread application at microwave frequencies.This article concludes the series on SAW devices and applications.