Tm:Y2SiO5晶体的生长和光谱性质研究

采用中频感应提拉法生长了高质量的Tm:Y₂SiO₅(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D₁和D₂,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D₁方向在790nm处出现较强的吸收峰, 关键词： 2SiO₅')" href="#">Tm:Y₂SiO₅ 单斜晶系 吸收光谱 荧光光谱     

Synthesis and photoluminescence properties of Nd2O3 nanoparticles modified by sodium bis 2-ethylhexyl sulfosuccinate

This paper reports that Nd₂O₃ nanoparticles modified by AOT(sodium bis(2-ethylhexyl) sulfosuccinate) were prepared using microemulsion method in the system of water and propanol/AOT/toluene. Transmission electron microscopy shows that the Nd₂O₃ nanoparticles take the shape of sphere with 18\,nm and 31nm with different preparation. The organic sol of Nd₂O₃ nanoparticles is very stable at room temperature. X-ray diffraction results show that the product has hexagonal phase structure. Two ultraviolet emission band at 344\,nm and 361\,nm corresponding to the transition of ⁴D_3/2→4I_9/2 and 2P_3/2→⁴I₁₁₂ or ⁴D_3/2 →⁴I_13/2 were observed.     

Judd--Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the Tm^3＋：Lu2SiO5 （Tm：LSO） crystal is grown by Czochralski technique. The roomtemperature absorption spectra of Tm：LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Ω2=9.3155×10^-20 cm^2, Ω4=8.4103×10^-20 cm^2, Ω6=1.5908×10^-20 cm^2, the fluorescence lifetime is calculated to be 2.03 ms for ^3F4 → ^3H6 transition, and the integrated emission cross section is 5.81×10^-18 cm^2. Room-temperature laser action near 2μm under diode pumping is experimentally evaluated in Tm：LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuouswave maximum output power of 0.67 W. The emission wavelengths of Tm：LSO laser are centred around 2.06μm with spectral bandwidth of -13.6 nm.     

Synthesis and characterization of Ca2Sn1-xCexO4 with blue luminescence originating from Ce^4＋ charge transfer transition

Ce^4＋-doped Ca2SnO4 with a one-dimensional structure, which emits bright blue light, is prepared by using a solid-state reaction method. The x-ray diffraction results show that the Ce^4＋ ions doped in Ca2SnO4 occupy the Sn^4＋ sites. The excitation and emission spectra of Ca2Sn1-xCexO4 appear to have broad bands with peaks at - 268nm and -442nm, respectively. A long excited-state lifetime （-83μs） for the emission from Ca2Sn1-xCexO4 suggests that the luminescence originates from a ligand-to-metal Ce^4＋ charge transfer （CT）. The luminescent properties of Ca2Snl_xCexO4 have been compared with those of Sr2CeO4, which is the only material reported so far to show Ce^4＋ CT luminescence. More interestingly, it is observed that the emission intensity of Ca2Sn1-xCexO4 with a small doping concentration （x - 0.03） is comparable to that of Sr2CeO4 in which the concentration of active centre is 100%.     

Spontaneous magnetostriction of Y2Fe16Al compound

The structure and magnetic properties of Y₂Fe₁₆Al compound have been investigated by means of x-ray diffraction and magnetization measurements. The Y₂Fe Fe₁₆Al compound has a hexagonal Th$_{2}$Ni$_{17}$-type structure. Negative thermal expansion was found in Y₂Fe₁₆Al compound in the temperature range from 332 to 438K by x-ray dilatometry. The coefficient of the average thermal expansion is \alpha =-3.4\times 10^-5K^-1. The spontaneous magnetostrictive deformations from 293 to 427K have been calculated based on the differences between the experimental values of the lattice parameters and the corresponding values extrapolated from the paramagnetic range. The result shows that the spontaneous volume magnetostrictive deformation \textit{$\omega $}$_{\rm S}$ decreases from 5.4$\times $10^-3to near zero with temperature increasing from 293 to 427K, the spontaneous linear magnetostrictive deformation \textit{$\lambda $}$_{\rm c}$ along the $c$ axis is much larger than the spontaneous linear magnetostrictive deformation \textit{$\lambda $}$_{\rm a}$ in basal-plane in the same temperature range except near 427K.     

Magnetic properties and magnetocaloric effects in Tb6Co1.67Si3 compound

Magnetic properties and magnetocaloric effects of Tb₆Co_1.67Si₃ have been investigated by magnetization measurement. This compound is of a hexagonal Ce$_{6}$Ni$_{2}$Si$_{3}$-type structure with a saturation magnetization of 187\,emu/g at 5\,K and a reversible second-order magnetic transition at Curie temperature $T_{\rm C} = 186$\,K. A magnetic entropy change $\Delta S = 7$\,J\,$\cdot$\,kg$^{-1}$\,$\cdot$\,K$^{-1}$ is observed for a magnetic field change from 0 to 5\,T. A large value of refrigerant capacity (RC) is found to be 330\,J/kg for fields ranging from 0 to 5\,T. The large RC, the reversible magnetization around $T_{\rm C}$ and the easy fabrication make the Tb₆Co_1.67Si₃ compound a suitable candidate for magnetic refrigerants in a corresponding temperature range.     

NdNi2Ge2化合物的结构和电磁输运性质

利用非自耗真空电弧熔炼法制备了NdNi₂Ge₂化合物样品,采用X射线粉末衍射技术和Rietveld全谱拟合分析方法测定了其晶体结构. 结果显示该化合物的空间群为I4/mmm,点阵参数为:a=4.120(1),c=9.835(0),Z=2,Nd原子占据2a晶位,Ni原子占据4d晶位,Ge原子占据4e晶位. NdNi₂Ge₂化合物呈现顺磁性,应用居里-外斯定律拟合计算得到居里-外斯常数为25.8,居里-外斯温度为6.24 K. 有效势磁矩为3.69μ_B,这与理论计算Nd³⁺的磁矩相符,表明磁矩主要源于Nd³⁺. 电阻率变化范围为0.3 Ω ·μm^-1-1 Ω ·μm,电阻曲线拟合显示NdNi₂Ge₂呈半金属性. 关键词： 2Ge₂')" href="#">NdNi₂Ge₂ Rietveld结构精修 电磁输运     

强耦合磁失措自旋冰系统Dy2Ti2O7单晶生长和基本磁性质测量

利用红外光源浮区法生长出大尺寸、高质量的磁失措自旋冰化合物Dy₂Ti₂O₇单晶体.X射线衍射实验证实晶体具有面心立方结构，空间群为Fd3m，晶胞参数a＝1.0112(2) nm，［111］和［400］方向X射线衍射摇摆曲线半高宽分别仅为0.07°和0.05°.直流磁化率与温度关系测量给出晶体的Van Vleck顺磁因子为2.46×10^-5 m³/mol，有效磁矩μ_eff＝10.24(4)μ_B，Cure-Weiss温度Θ_CW＝1.1 K，揭示Dy₂Ti₂O₇具有弱的铁磁性.对磁性起源的综合分析表明，该自旋冰晶体磁性质主要来源于磁偶极相互作用，且相关最近邻长程偶极相互作用能量标度D_nn＝3.00 K. 关键词： 2Ti₂O₇')" href="#">Dy₂Ti₂O₇ 浮区法晶体生长 关联电子系统 自旋冰     

Synthesis, structure and antiferromagnetic behaviour of brannerite MnV2O6

Brannerite MnV 2 O 6 with plate-like shape is successfully synthesized by hydrothermal method.Its crystal structure and morphology are investigated by x-ray diffraction (XRD),scanning electron microscopy (SEM),transmission electron microscope (TEM),high resolution transmission electron microscopy (HRTEM) and select area electronic diffraction (SAED).The results show that the brannerite MnV 2 O 6 with monoclinic structure has a uniform plate-like shape with a diameter of about 5-8 μm and a thickness of about 500 nm.SAED patterns further confirm the structure of the brannerite MnV 2 O 6 and the single crystalline character of the plate crystal.Magnetic properties are measured by superconducting quantum interference device (SQUID) in a temperature range of 2-300 K under a magnetic field of 1 T.The magnetic measurement results indicate that the material undergoes an antiferromagnetic transition with a N’eel temperature of 17 K.Above 50 K,the inverse susceptibility is fitted well to the Curie-Weiss law with a calculated moment of 5.98 μ B.Finally,the origin of antiferromagnetic behaviour in the brannerite MnV 2 O 6 is explained by means of Anderson model.     

Fabrication, structure and luminescence properties of polycrystalline Tb-doped Lu2SiO5 films by Pechini sol–gel method

Tb³⁺-doped lutetium oxyorthosilicate (Tb:Lu₂SiO₅, LSO) films have been successfully fabricated on carefully cleaned silicon (1 1 1) substrates by Pechini sol–gel method combined with the spin-coating technique. X-ray diffraction (XRD), photoluminescence (PL) spectra and atomic force microscopy (AFM) were employed to characterize the resultant films. XRD patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition from A-type LSO to B-type LSO occurred at 1100 °C. The AFM observation revealed that the phosphor films were uniform and crack-free, consisting of closely packed grains with an average size of 200–300 nm. The PL spectra showed the characteristic emission ⁵D₄ → ⁷F_J (J = 3–6) for Tb³⁺, The lifetime of Tb³⁺ in Tb:LSO films was 2.33 ms. The effect of heat-treatment temperature on the luminescent properties was also investigated.     

Spectroscopic and laser properties of Nd:Gd0.8La0.2VO4 crystal

The polarised absorption and fluorescence spectra of Nd:Gd_0.8La_0.2VO₄ crystal are measured and compared to those of Nd:GdVO₄. CW laser properties of diode-pumped Nd:Gd_0.8La_0.2VO₄ crystal operating at fundamental wavelengths of 1.06 and 1.34 μm, as well as when intracavity frequency-doubled to 532 and 670 nm, have been studied. The maximum output powers at 1.06 μm, 1.34 μm, 532 nm and 670 nm are 1.18 W, 671 mW, 206 mW and 42 mW respectively, at a diode-launched pump power of 2.9 W. The threshold pump powers are 80, 267, 7 and 15 mW respectively.     

基质敏化的Er0.1Gd0.9VO4晶体的红外量子剪裁

研究了Er_0.1Gd_0.9VO₄晶体材料的红外量子剪裁现象, 发现了较为有趣的基质敏化的红外量子剪裁现象. 即对于1537.5 nm的⁴I_13/2→⁴I_15/2红外荧光的激发谱存在一个宽而强的337.0 nm波长的激发谱峰,仔细分析可以认定337.0 nm的激发峰对应着基质GdVO₄材料的吸收. 同时,发光谱的测量显示337.0 nm光激发Er_0.1Gd_0.9VO₄材料的基质吸收带时导致的1537.5 nm⁴I_13/2→⁴I_15/2红外荧光的积分强度比其他所有荧光的积分强度的总和大了接近10倍, 它的红外量子剪裁效率仅次于最强的²H_11/2能级受激的红外量子剪裁效率且比其他能级都强. 关键词： 红外的量子剪裁 太阳能电池 0.1Gd_0.9VO₄晶体材料')" href="#">Er_0.1Gd_0.9VO₄晶体材料     

Particle analysis and properties of mechanically alloyed Nd16Fe76−xTixB8

Nanocrystalline Nd₁₆Fe_76−xTi_xB₈ hard magnetic powders were prepared by mechanical alloying and respective heat treatment at 973–1073 K /30–60 min. The nanocrystalline hard magnetic powders were investigated by the NanoSight Halo LM10^TM Nanoparticle Analysis System, AFM, SEM and Mössbauer spectrometry. The nanocrystals have average size of 40 nm and the crystals form agglomerates with an average size of about 180 nm. Halo^TM, AFM and SEM techniques are the complementary methods, which give comparable results.     

Measurement of Wavelength Dependence of Electro-Optic Coefficients r22 of Non-doped and 5% MgO-doped Congruent LiNbO3 Crystals and 1.8% MgO-doped Quasi-stoichiometric LiNbO3 Crystal by Multiple Reflection Interference Method

The electro-optic coefficient r ₂₂ in the wavelength range from 409 to 1580 nm was measured for non-doped and 5% MgO-doped congruent LiNbO₃ crystals and 1.8% MgO-doped quasi-stoichiometric LiNbO₃ crystals in a simple optical system using a multiple reflection interference method capable of producing high-precision results without the application of antireflection film to the end faces of the crystal. The influence of the manufacturing errors of the electrooptic crystals was discussed on the measurement of the r ₂₂ coefficient. The experimental errors are less than approximately 0.5% in the wavelength range from 409 to 1064 nm and approximately 1% from 1340 to 1580 nm. It was further shown that polarizing of the laser along X axis resulted in highly accurate measurement of the r ₂₂ of LiNbO₃ crystals.     

Scanning tunneling microscopy/spectroscopy on multi-layered cuprate superconductor Ba2Ca5Cu6O12 (O1−x Fx)2

Scanning tunneling microscopy/spectroscopy (STM/STS) measurements on multi-layered cuprate superconductor Ba₂Ca₅Cu₆O₁₂ (O_1−x F_x)₂ are carried out. STM topographies show randomly distributed bright spot structures with a typical spot size of 0.8 nm. These bright spots are occupied about 28% per one unit cell of c-plane, which is comparable to the regular amount of apical oxygen of 20% obtained from element analysis. Tunneling spectra simultaneously show both the small and the large gap structures. These gap sizes at 4.9 K are about Δ 15 meV and 90 meV, respectively. The small gap structure disappears at the temperature close to T_C, while the large gap persists up to 200 K. Therefore, these features correspond to the superconducting gap and pseudogap, respectively. These facts give evidence for some ordered state with large energy scale even in the superconducting state. For the superconducting gap, the ratio of 2Δ/K_BT_C = 4.9 is obtained with T_C = 70 K, which is determined from temperature dependence of the tunneling spectra.     

Pure UV photoluminescence from ZnO thin film by thermal retardation and using an amorphous SiO2 buffer layer

ZnO/SiO₂ thin films were fabricated on Si substrates by E-beam evaporation with thermal retardation. The as-prepared films were annealed for 2 h every 100 °C in the temperature range 400-800 °C under ambient air. The structural and optical properties were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL). The XRD analysis indicated that all ZnO thin films had a highly preferred orientation with the c-axis perpendicular to the substrate. From AFM images (AFM scan size is 1 μm×1 μm), the RMS roughnesses of the films were 3.82, 5.18, 3.65, 3.40 and 13.2 nm, respectively. PL measurements indicated that UV luminescence at only 374 nm was observed for all samples. The optical quality of the ZnO film was increased by thermal retardation and by using an amorphous SiO₂ buffer layer.     

Effect of microstructure on thermoelectric properties of CSD-grown Bi2Sr2Co2Oy thin films

Three Bi₂Sr₂Co₂O_y thin films with different microstructures have been prepared by chemical solution deposition on LaAlO₃(001) through varying the annealing temperature. With the decrease in the annealing temperature, both the size and c-axis alignment degree of grains in the film decrease as well, leading to an increase in the film resistivity. In addition, the decrease in the annealing temperature also results in a slight increase in the seebeck coefficient due to the enhanced energy filtering effect of small-grain film. The nanostructured Bi₂Sr₂Co₂O_y film with the average grain size of about 100 nm shows a power factor comparable to that of the films with larger grains. Since the thermal conductivity of the nanostrcutured films can be depressed due to the enhanced phonon scattering by grain boundary, a higher figure of merit is expected in Bi₂Sr₂Co₂O_y thin film with grains in nanometer size.     

A new method to preserve the c-axis growth of thick YBa2Cu3O7–δ films grown by pulsed laser deposition

YBa₂Cu₃O_7–δ (YBCO) films were prepared on (1 0 0) MgO substrates by pulsed laser deposition (PLD) method. In order to eliminate the a-axis growth, which is commonly observed in the YBCO film thicker than a critical value, we developed a new PLD target that was sintered at a temperature far below YBCO 123 phase formation. The surface analysis made by AFM technique confirmed that very fine particles of around 20 nm size could be ejected from the new target to the substrate. The fine oxide clusters could be easily moved and incorporated into the YBCO phase thus benefited the c-axis growth even in the thick films. For instance, only the c-axis growth in the new film with a thickness of about 650 nm was larger than a critical thickness of the a-axis growth. However, in the standard film of the same thickness, there is 24.5% of the a-axis growth accompanying the main c-axis growth. Therefore, the c-axis growth could be preserved in the very thick YBCO film by a non-superconducting target.     

Preparation and luminescence characteristics of Eu^2＋ activated silicate phosphor

This paper synthesizes the Sr2SiO4：Eu^2＋ phosphor by high temperature solid-state reaction. The emission spectrum of Sr2SiO4 ： Eu^2＋ shows two bands centred at 480 and 547 nm, which agree well with the calculation values of emission spectrum, and the location of yellow emission of Sr2SiO4 ： Eu^2＋ is influenced by the Eu^2＋ concentration. The excitation spectrum for 547 nm emission has two bands at 363 and 402 nm. The emission spectrum of white light emitting diodes （w-LEDs） based on Sr2SiO4 ： Eu^2＋ phosphor ＋ InGaN LED was investigated.     

In situ AFM and Raman spectroscopy study of the crystallization behavior of Ge2Sb2Te5 films at different temperature

Using in situ atomic force microscope (AFM) and Raman spectroscopy, the real-time crystallization properties of Ge₂Sb₂Te₅ films at different temperature were characterized. The given AFM topograph and phase images revealed that the structure of amorphous Ge₂Sb₂Te₅ films began to change at a temperature of as low as 100 °C. When the temperature reached 130 °C, some crystal fragments had formed at the film surface. Heating up to 160 °C, the size of the visible crystal fragments increased, but decreased at a higher temperature of 200 °C. When the Ge₂Sb₂Te₅ film was cooled down to room temperature (RT) from 200 °C, the crystal fragments divided into crystal grains due to the absence of heating energy. The Raman spectra at different temperature further verified the structure evolution of the Ge₂Sb₂Te₅ film with temperature. This work is of significance for the preparation of Ge₂Sb₂Te₅ films and the erasing of data.