| 基质敏化的Er0.1Gd0.9VO4晶体的红外量子剪裁 |
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| 引用本文： | 陈晓波,徐怡庄,张春林,张会敏,张蕴芝,周固,李崧.基质敏化的Er0.1Gd0.9VO4晶体的红外量子剪裁[J].物理学报,2011,60(10):107803-107803. |
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| 作者姓名： | 陈晓波 徐怡庄 张春林 张会敏 张蕴芝 周固 李崧 |
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| 作者单位： | 1. 应用光学北京重点实验室,北京师范大学,北京 100875;
2. 北京大学化学与分子工程学院,北京 100871;
3. 中国科学院物理研究所,北京 100080 |
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| 基金项目： | 国家自然科学基金(批准号: 10674019)资助的课题. |
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| 摘 要： | 研究了Er0.1Gd0.9VO4晶体材料的红外量子剪裁现象, 发现了较为有趣的基质敏化的红外量子剪裁现象. 即对于1537.5 nm的4I13/2→4I15/2红外荧光的激发谱存在一个宽而强的337.0 nm波长的激发谱峰,仔细分析可以认定337.0 nm的激发峰对应着基质GdVO4材料的吸收. 同时,发光谱的测量显示337.0 nm光激发Er0.1Gd0.9VO4材料的基质吸收带时导致的1537.5 nm4I13/2→4I15/2红外荧光的积分强度比其他所有荧光的积分强度的总和大了接近10倍, 它的红外量子剪裁效率仅次于最强的2H11/2能级受激的红外量子剪裁效率且比其他能级都强.
关键词：
红外的量子剪裁
太阳能电池
0.1Gd0.9VO4晶体材料')" href="#">Er0.1Gd0.9VO4晶体材料
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| 关 键 词： | 红外的量子剪裁 太阳能电池 Er0.1Gd0.9VO4晶体材料 |
| 收稿时间： | 2010-12-28 |
Host sensitized infrared quantum cutting of Er0.1Gd0.9VO4 crystal |
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| Chen Xiao-Bo,Xu Yi-Zhuang,Zhang Chun-Lin,Zhang Hui-Min,Zhang Yun-Zhi,Zhou Gu and Li Song.Host sensitized infrared quantum cutting of Er0.1Gd0.9VO4 crystal[J].Acta Physica Sinica,2011,60(10):107803-107803. |
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| Authors: | Chen Xiao-Bo Xu Yi-Zhuang Zhang Chun-Lin Zhang Hui-Min Zhang Yun-Zhi Zhou Gu and Li Song |
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| Institution: | Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing 100875, China;The Chemistry and the Molecular Engineer College, Peking University, Beijing 100871, China;Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing 100875, China;Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing 100875, China;Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing 100875, China |
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| Abstract: | The infrared quantum cutting phenomena of Er0.1Gd0.9VO4 crystal are studied in the present article. An interesting host sensitized infrared quantum cutting phenomenon is found, that is, there is a strong and broad excitation peak at 337.0 nm wavelength for its excitation spectrum of 1537.5 nm 4I13/2→4I15/2 infrared fluorescence. It can be recognized that the 337.0 nm excitation peak corresponds to the absorption of host GdVO4 crystal. Meanwhile, it is found that the integral fluorescence intensity of 1537.5 nm 4I13/2→4I15/2 infrared fluorescence, when the host absorption band is excited by 337.0 nm light, is about ten times larger than that of the sum of all other fluorescence intensities. Its infrared quantum cutting efficiency is similar to that of the excited 2H11/2 energy level and larger than that of others. |
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| Keywords: | infrared quantum cutting solar cell Er0 1Gd0 9VO4 crystal |
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