Zn_（1－x）Mg_xS_ySe_（1－y）四元半导体合金的拉曼散射光谱研究

用分子束外延方法在ＧａＡｓ（１００）衬底上生长了Ｚｎ１－ｘＭｇｘＳｙＳｅ１－ｙ四元半导体合金薄膜．用Ｘ－射线衍射方法确定了外延层的结构和晶格常数．测量了这些样品在平行和垂直两种不同几何配置下的拉曼散射光谱并对其特性做了研究。从实验上观察到了四类不同的晶格振动模：类ＺｎＳｅ的ＴＯ和ＬＯ模以及类ＺｎＳ和类ＭｇＳ的ＬＯ模，实验发现：在ＺｎＳｅ和ＺｎＳＳｅ中加入Ｍｇ使得类ＺｎＳｅ的ＴＯ和ＬＯ模的振动频率下降；同时，也使类ＺｎＳ模的频率随Ｓ的增加率减小。     

稀磁半导体Zn_（1－x）Mn_xSe外延膜的反射和光致发光谱

测量了用热壁外延（ＨＷＥ）生长的不同组分（０≤ｘ≤０．９８）的Ｚｎ１－ｘＭｎｘＳｅ薄膜在温度为３００Ｋ下的反射光谱，用Ｘ射线能借测定样品实际的组分ｘ值，由此获得了其能隙Ｅｇ与组分ｘ的关系：在Ｏ＜Ｘ＜０．２组分范围，Ｅｇ随ｘ的变化显示了反常现象，当Ｘ＞０．２时，能隙Ｅｇ随ｘ线性增大。在室温和低温下测量了样品的光致发光，除观测到Ｍｎ２＋离子内部４Ｔ１→６Ａ１发光峰外，在其低能边观测到一个较宽的发光峰，对结果进行了分析讨论。     

稀磁半导体Zn1—xMnxSe外延膜的反射的光致发光谱

测量了用热壁外延（ＨＷＥ）生长的不同组分（０≤ｘ≤０．９８）的Ｚｎ１－ｘＭｎｘＳｅ薄膜在温度为３００Ｋ下的反射光谱，用Ｘ射线能谱测定样品实际的组分ｘ值，由此获得了其能隙Ｅｇ与组分ｘ的关系：在０〈ｘ〈０．２组分范围，Ｅｇ随ｘ的变化显示了反常现象，当ｘ〉０．２时，能隙Ｅｇ随ｘ线性增大。在室温和低温下测量了样品的光致发光，除观测到Ｍｎ＾２＋离子内部４Ｔ１→６Ａ１发光峰外，在其低能边观测到一个较宽的发光峰     

喷雾热解法制备掺Cr的Al2O3薄膜及其抗腐蚀性能

用喷雾热解法制备出厚为２０００Ａ的掺Ｃｒ的Ａｌ２Ｏ３薄膜。ＸＲＤ和ＸＰＳ分析证明其为无定形的Ａｌ２－ｘＣｒｘＯ３（ｘ＝０．０７２），ＳＥＭ和椭圆仪分析结果验证了薄膜的均匀性。该薄膜表现出良好的绝缘性质和抗腐蚀性能。     

氮氧化合物在铜,银,镍,钯,铂面的吸附,脱附理论研究

采用ＡＳＥＤ－ＭＯ量子化学方法对氮（Ｎ２）和氮氧化合物（ＮＯｘ）在Ｃｕ,Ａｇ,Ｎｉ,Ｐｄ,Ｐｔ５种金属（１１１）面上的吸附态进行了系列研究,计算结果表明：在汽车尾气净化的催化处理过程中,当用铜,银,镍,钯,铂等金属作催化剂将ＮＯｘ转化为Ｎ２时,以金属Ｐｔ为最好。用铂作催化剂将ＮＯ还原成Ｎ２时,可得如下反应机理：ＮＯ分子首先吸附在Ｐｔ表面,然后吸附分子ＮＯ的Ｎ－Ｏ键中Ｏ原子。     

（Ti,Al）N薄膜光学性能的研究

研究了（Ｔｉ，Ａｌ）薄膜的光学特性，对其反射和透射光谱作了仔细分析。运用Ｈａｄｌｅｙ方程，算出一定成分（Ｔｉ，Ａｌ）Ｎ膜的折射率ｎ，消光系数ｋ随波长的变化关系。又根据透射曲线，计算出了（Ｔｉ，Ａｌ）Ｎ膜的光隙能。     

Ag／YB12Cu3O7—x,Al／YBa2Cu3O7—x界面特性分析

利用电学测量方法结合二次离子质谱（ＳＩＭＳ）技术对金属Ａｇ与Ａｌ与ＹＢａ２Ｃｕ３Ｏ７－ｘ（ＹＢＣＯ）超导薄膜接触界面电学性质和扩散特征进行了测试分析，分析结果显示由于Ａｇ和Ａｌ具有不同的化学性质，二与ＹＢＣＯ界面的互扩散特性有明显不同，这些不同影响到接触界面的电学性质和接触窗口下ＹＢＣＯ超导性能，在Ａｇ／ＹＢＣＯ样品中，在高于３５０℃以上的温度下氧气氛中退火将引起Ａｇ和Ｏ的界面互扩散，但对ＹＢＣ     

电场对Au—Ag薄膜结构影响的AFM和VAXPS研究

利用原子力显微镜（ＡＦＭ）和变角Ｘ射线光电子谱（ＶＡＸＰＳ）技术研究了Ａｕ－Ａｇ／ＳｉＯ２体系在直流电场作用下，Ａｕ，Ａｇ电迁移的特点及所引起的薄膜结构的变化，观察到较低温度下Ａｕ，Ａｇ聚集状态的显著变化，发现电迁移过程中Ａｕ－Ａｇ薄膜与ＳｉＯ２基底之间存在界面化学反应，膜层中Ａｕ，Ａｇ，Ｓｉ等元素的化学状态发生了相应的变化，这些结构表明ＳｉＯ２表面上Ａｕ－Ａｇ复合薄膜电迁移不只是一个水平方向的扩     

应变层异质结ZnS/ZnSe、ZnS/ZnS_xSe_(1-x)和ZnSe/ZnS_xSe_(1-x)价带带阶的研究

采用基于原子球近似下线性Ｍｕｆｉｎ－Ｔｉｎ轨道（ＬＭＴＯ－ＡＳＡ）的平均键能计算方法，研究了以ＺｎＳｘＳｅ１－ｘ为衬底，沿（００１）方向外延生长的应变层异质结ＺｎＳ／ＺｎＳｅ、ＺｎＳ／ＺｎＳｘＳｅ１－ｘ和ＺｎＳｅ／ＺｎＳｘＳｅ１－ｘ的价带带阶值ΔＥｖ（ｘ）．研究表明，ΔＥｖ（ｘ）值随衬底合金组分ｘ单调变化．且两者的关系是非线性的．在此计算结果与其它理论计算和实验结果符合较好．     

Zn1—xMnx／ZnSe应变超晶格分子束外延生长及光学特性研究

用分子束外延方法在ＧａＡｓ（１００）衬底上成功生长了高质量的Ｚｎ１－ｘＭｎｘＳｅ／ＺｎＳｅ（ｘ＝０．１６），超晶格结构，用Ｘ射线衍射和低温光致发光（ＰＬ）对其结构，应变分布以及光学性能进行了研究，结果表明，２Ｋ温度下，Ｚｎ１－ｘＭｎｘＳｅ／ＺｎＳｅ超晶格的光致发光中主发光峰对应于ＺｎＳｅ阱中基态电子和基态轻空穴之间的自由激子跃迁，而且其峰位相对于ＺｎＳｅ薄膜材料的自由激子峰有明显移动。其中，当超晶     

Characteraction of Ag-doped ZnO thin film synthesized by sol–gel method and its using in thin film solar cells

Pure 2% and 4% Ag-doped ZnO thin films have been synthesized on glass substrates by sol–gel method. The structure, morphology and optical properties of the samples have been studied by X-ray diffractometer (XRD), scanning probe microscope, UV–vis spectrophotometer, respectively. The XRD result shows that the pure ZnO has a wurtzite hexagonal structure, no phase segregation is observed. The surface morphology of pure ZnO thin film shows that the grains are growing preferentially along the c-axis orientation perpendicular to the substrates. The transmittance spectra reveal that all samples have high transmittance above 90% in visible region. With Ag doping content increase, a red shift is observed. The performance of Ag-doped ZnO films using in thin film solar cells are simulated. The results show that 4% Ag-doped ZnO thin film can greatly improve the absorption of the cells. Compare to pure ZnO, solar cell's energy conversion efficiency improvement of 2.47% is obtained with 4% Ag doped ZnO thin film.     

Sn掺杂ZnO薄膜的室温气敏性能及其气敏机理

采用化学气相沉积方法在预制好电极的玻璃基底上制备出Sn掺杂ZnO薄膜和纯ZnO薄膜. 两种样品典型的形貌为四足状ZnO晶须, 其直径约为150-400 nm, 呈疏松状结构. 气敏测试结果显示Sn掺杂ZnO薄膜具有优良的室温气敏性, 并对乙醇具有良好的气敏选择性, 而纯ZnO薄膜在室温条件下对乙醇和丙酮均没有气敏响应. X射线衍射结果表明两种样品均为六方纤锌矿结构. Sn掺杂ZnO样品中没有出现Sn及其氧化物的衍射峰, 其衍射结果与纯ZnO样品对比, 衍射峰向小角度偏移. 光致发光结果表明, Sn掺杂ZnO薄膜与纯ZnO薄膜均出现紫外发光峰和缺陷发光峰, 但是Sn的掺杂使得ZnO的缺陷发光峰明显增强. 将Sn掺杂ZnO样品在空气中退火后, 其室温气敏性消失, 说明Sn掺杂ZnO样品的室温气敏性可能与其缺陷含量高有关. 采用自由电子散射模型解释了Sn掺杂ZnO薄膜的室温气敏机理.     

Ag:ZnO/SiO_2复合薄膜的制备与光学性能

采用溶胶-凝胶法在玻璃衬底上制备Ag掺杂于ZnO层的Ag:ZnO/SiO2(AZSO)复合薄膜,采用XRD、SEM、UV-Vis和PL谱等手段对样品的晶体结构、微观形貌、透过率、吸收率及光致发光性能等进行表征,并观察了掺Ag量对复合薄膜光学性能的影响。XRD结果表明:样品经300℃退火处理后出现ZnO及单质Ag衍射峰;由SEM结果可观察到AZSO复合薄膜颗粒分散均匀,表面致密,其断面照片显示了薄膜的双层结构。UV-Vis吸收光谱结果表明:随着复合薄膜中Ag含量的增加,Ag与ZnO之间的电子转移及Ag颗粒的变大促使Ag的特征吸收峰呈现红移和宽化,样品的透过率也随之降低,吸收边向短波长方向移动,禁带宽度减小。PL谱结果表明:由于Ag的掺入减少了ZnO内空穴浓度并对复合薄膜的结构缺陷进行补偿,以及Ag在440nm附近的特征吸收,降低了复合薄膜的发光强度。     

H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al₂O₃陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10^-4 Ω·cm 关键词： 氧化锌 氢气流量 磁控溅射 太阳电池     

Sensitivity enhancement of AZO-based ethanol sensor decorated by Au nano-islands

Detecting the hazardous gases for monitoring air pollution and medical diagnosis make highly sensitive gas sensors appeal to many researches. In this paper, benefiting from unique properties of noble metals, Al-doped ZnO based Ethanol sensors were fabricated and characterized in three structures including Al: ZnO thin film, Silver and Gold nano-islands on Al: ZnO thin film. The Silver and Gold thin films turn to nano-islands after a simple annealing process. The XRD analysis of the sputtered Al: ZnO layer indicates the wurtzite crystal structure of the layer with a peak at (002) plane. Moreover, the sensitivity study reveals that Nano-islands of noble metals substantially affects the sensitivity of the sensors. The decorated Gold nano-island Al: ZnO Ethanol sensor has the highest response showing an amount of 45. The response of Al: ZnO and Silver decorated Al: ZnO sensors are virtually identical to all concentrations of Ethanol, whereas the Al: ZnO gas sensor with Gold nano-islands has the substantial sensitivity for different concentrations. In addition, the response times of the sensors are 85, 70 and 90 s for Al: ZnO, Al: ZnO with Ag islands and Al: ZnO decorated by Au islands, respectively. The recovery time of Al: ZnO sensor decorated by Au islands is about 23s, while the recovery time of the Al: ZnO and Al: ZnO decorated by Silver islands are 360 and 370s, respectively. Hence, the simple annealing process on the sputtered gas sensor with a thin layer of Gold makes nano-islands on the sensor which elevates the performance of Ethanol sensing due to the high sensitivity and sensitivity of the sensor.     

用锌金属有机源和二氧化碳等离子体增强化学气相沉积的方法制备高质量氧化锌薄膜

报道了用金属锌有机源和二氧化碳混合气源等离子体增强化学气相沉积(PECVD)的方法成功地制备高质量择优取向(0002)的ZnO薄膜。通过X-ray衍射谱进行了结构分析得到六方结构,择优取向,晶粒尺寸大约在220nn.并通过原子力显微镜分析更进一步验证了晶粒的尺寸。通过透射谱分析观察到了典型的激子吸收线。这种方法的特点是可以在低温条件下在任何衬底上生长大面积均匀性好、结晶度高的ZnO薄膜。     

钼掺杂氧化锌薄膜的结构、光学和表面等离子体特性研究

室温下,通过直流磁控反应溅射在石英衬底上制备一系列钼掺杂氧化锌薄膜。分别采用X射线衍射(XRD)、原子力显微镜(AFM)、分光光度计及拉曼光谱仪研究了钼掺杂浓度对氧化锌薄膜结构、表面形貌、光学性能和表面等离子体特性的影响。XRD测试结果表明,零掺杂氧化锌薄膜结晶良好,呈c轴择优取向,掺杂后薄膜缺陷增多,结晶质量下降,当掺杂浓度达到3.93 Wt%时,薄膜由c轴择优取向的晶态转变为非晶态。AFM测试结果表明非晶态掺钼氧化锌薄膜表面光滑,粗糙度最低可达489 pm。透射光谱表明所有薄膜样品在可见光范围(400～760 nm)平均透过率均达到80%,禁带宽度随着掺杂浓度的提高从3.28 eV单调增加至3.60 eV。吸收光谱表明氧化锌薄膜表面等离子体共振吸收峰随钼掺杂量的增大发生蓝移,而拉曼光谱表明Mo重掺杂时ZnO薄膜表面拉曼散射信号强度显著降低。通过Mo掺杂获得非晶态氧化锌薄膜,拓宽了氧化锌薄膜材料的应用领域,同时研究了Mo掺杂浓度对氧化锌薄膜表面等离子体的调控作用,这对制备氧化锌基光子器件具有重要参考价值。     

制备温度对TiO2基膜表面非晶态ZnO薄膜发光特性影响的研究

利用电子束热蒸发镀膜的方式，以高纯度的ZnO和TiO₂颗粒为原料，以Si为基底在有氧的气氛中制备ZnO/TiO₂复合薄膜。研究制备温度对ZnO/TiO₂薄膜的结构以及发光性能的影响。通过拉曼(Raman)谱和X射线衍射(XRD)谱分析了ZnO/TiO₂薄膜的结构，表明所制备的ZnO薄膜为非晶态。用光致发光 (PL) 谱表征了它的发光特性，数据表明在250℃时制备的非晶态ZnO薄膜在波长389nm处具有极强的紫外光发射，在波长431nm处发出很强的紫光，在波长519nm处发出较强的黄绿光。     

Nitrogen oxides and ammonia sensing characteristics of SILAR deposited ZnO thin film

Pure and Sn, Ni doped ZnO thin films were deposited on glass substrates using a novel successive ionic layer adsorption and reaction (SILAR) method at room temperature. Microstructures of the deposited films were optimized by adjusting growth parameters. The variation in resistivity of the ZnO film sensors was performed with rapid photothermal processing (RPP). The effect of rapid photothermal processing was found to have an important role in ZnO based sensor sensitivity to NO₂, NH₃. While the undoped ZnO film surface exhibited higher NH₃ sensitivity than that of NO₂, an enhanced NO₂ sensitivity was noticed for the ZnO films doped with Sn and higher NH₃ sensitivity was obtained by Ni doping.     

A comparative study of the microstructures and optical properties of Cu- and Ag-doped ZnO thin films

Cu- and Ag-doped ZnO films were deposited by direct current co-reactive magnetron sputtering technique. The microstructure, the chemical states of the oxygen, zinc, copper and silver and the optical properties in doped ZnO films were investigated by X-ray diffraction spectroscopy (XRD), X-ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. XRD analysis revealed that both of Cu- and Ag-doped ZnO films consist of single phase ZnO with zincite structure while the doping elements had an evident effect on the (0 0 2) preferential orientation. The XPS spectra showed that the chemical states of oxygen were different in Cu- and Ag-doped ZnO thin films, which may lead to the shift of the band gap as can be observed in the transmittance and absorption spectra. Meanwhile, the widths of band tails of ZnO films became larger after Cu and Ag doping.