H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响

利用磁控溅射法,采用亚分子分层掺杂技术交替溅射Co靶和ZnO靶,在Si衬底上制备了不同氢氩流量比的H:ZCO薄膜样品,研究了氢氩流量比对薄膜结构特性和磁学性能的影响。所制备的薄膜样品具有c轴择优取向。由于H对表面和界面处悬挂键的钝化作用,随H₂流量比的增加,薄膜的择优取向变差。磁性测量结果显示,薄膜样品的铁磁性随着氢氩流量比的增大而增强。XPS结果表明,随着H含量的增大,金属态Co团簇的相对含量逐渐增加,而氧化态Co离子的相对含量逐渐减小。H:ZCO样品中的铁磁性可能来源于Co金属团簇,H的掺入促使ZnO中的Co离子还原成Co金属团簇,从而增强了薄膜样品的室温铁磁性。     

纯锆上离子注入钇和镧后的表面分析

用金属蒸汽真空弧源，以40kV加速电压对纯锆样品分别进行了10¹⁶—10¹⁷/cm²的钇、镧离子注入，注入温度约为130℃.然后对注入样品进行表面分析.x射线光电子能谱分析表明，注入的钇以Y₂O₃形式存在，镧以La₂O₃形式存在.俄歇电子能谱表明，纯锆基体表面的氧化膜厚度随着离子注入剂量的增加而增加，当离子注入剂量达到10¹⁷/cm²时，氧化膜的厚度达到了最大值.卢瑟福背散射显示镧层的厚度约为30nm，同时直接观察到当离子注入剂量为(La+Y)10¹⁷/cm²时，纯锆样品表面发生了严重的溅射. 关键词： 纯锆 钇和镧离子共注入 卢瑟福背散射 x射线光电子能谱     

类金刚石膜不同能量下的离子注入

本文对等离子体气相沉积法制备的类金刚石膜(a-C:H)进行了离子注入研究。注入剂量固定为5×10⁵Ar/cm²,注入能量分别为50,100,140和180keV。离子注入前后分别作了红外吸收谱,Raman谱,光学能隙,氢含量和电阻率的测量。结果表明,注入离子破坏了膜中的C—H键,sp²和sp³态都减少,而(sp²/sp³)比值增大;光学能隙E_opt,电阻 关键词：     

激光功率密度对类金刚石膜结构性能的影响

采用大功率高重复频率准分子激光溅射热解石墨靶制备了类金刚石膜，研究了激光功率密度对膜的结构和性能的影响，分析了膜的紫外可见透过谱及膜的带隙结构、Raman谱和电子衍射图，结果表明随着激光功率密度由10⁸W／cm²提高至10¹⁰ W／cm²，膜的结构也由无定形非晶结构转变为纳米晶金刚石结构，膜 中的sp³键舍量及各项性能均有提高. 关键词： 激光功率密度 类金刚石膜 性能 结构     

C+轰击铍的分子动力学模拟

使用分子动力学模拟方法研究了入射能量对C⁺离子与Be样品表面相互作用的影响。模拟结果表明,随着C⁺离子的入射能量增大,C⁺离子注入深度也增加,Be原子的溅射产额近似线性增加,而滞留在样品中的C原子数量变化不大,在C⁺离子轰击Be样品的初始阶段,样品中Be原子的溅射产额较大,而随着C⁺离子注入剂量的增加,Be原子的溅射产额逐渐减小并趋于稳定。在此作用过程中,在样品表面形成一个富C层,减缓了样品中Be原子的溅射速率,起到了保护Be样品的作用。     

ZnO薄膜的掺杂特性

通过MOCVD方法生长的ZnO薄膜一般为富锌生长,呈n型电导,要想得到高阻或低阻p-ZnO薄膜需要对其进行掺杂施主或受主杂质.主要研究在生长过程中通过NH₃对ZnO薄膜进行氮掺杂的情况,利用优化生长条件,即生长温度为610℃,Ar气(携带DEZn)流量为4sccm,O₂流量为120sccm,N₂流量为600sccm,得到在NH₃流量为80sccm时生长样品的结晶质量最高,在掺杂薄膜中NH₃流量高于或低于80sccm时,样品的表面形貌都将变差,只有在80sccm时表面粗糙度最低晶粒最小,表明该流量下获得的样品表面较光滑致密.所以80sccmNH₃流量为在R面蓝宝石上生长<110>取向ZnO薄膜的最佳掺杂流量.Hall测量结果表明,NH₃流量为50sccm的样品电导呈弱p型,电阻率为102Ω·cm,空穴载流子浓度为+1.69×10¹⁶cm^-3,迁移率为3.6cm²·V^-1·s^-1;当NH₃流量增加时样品的电导呈n型,电阻率最高达10⁸Ω·cm,我们认为与进入ZnO薄膜的H的量有关,并对其变化机理进行了详细的分析.     

Alq3/ITO结构的表面和界面电子状态的XPS研究

用传统的真空蒸镀法制备了Alq3/ITO样品,并用X光电子能谱（XPS）研究了Alq3/ITO紧密接触的表面和界面电子化学状态。对Alq3/ITO样品的表面分析表明,在Alq3分子中,Al原子的束缚能（Eb)为70．7eV和75．1eV,分别对应于Al(0)和Al(Ⅲ）态;C原子的束缚能为285．8eV、286．3eV和286．8eV,分别对应于C－C、C－O和C－N键;N原子的主峰位于401．0eV,对应于C－N＝C键;而O原子主要与H原子成键,其束缚能为532．8eV。为了研究Alq3/ITO的界面电子状态,我们用氩离子束对样品表面进行了溅射剥蚀,当溅射时间分别为30,35,45分种时进行XPS采谱分析。结果表明,随着氩离子束溅射时间增长,Al2p、Cls、Nls、Ols、In3d5/2和Sn3d5/2峰都向低束缚能方向有微小移动,且Al2p、Cls和Nls峰变弱,这是受ITO中扩散进入Alq3层的O、In和Sn原子的影响所致。     

H$lt;sub$gt;2$lt;/sub$gt;$lt;sup$gt;+$lt;/sup$gt;在强激光场中的解离及其量子调控的理论研究

利用非波恩-奥本海默近似的三维含时量子波包法,理论研究了氢分子离子在强激光场中的解离动力学.通过分析H₂⁺在不同的初始振动态（ν=0–9）和激光场强度下的解离核动能谱,得到了H₂⁺的光解离机理及其随激光场的变化规律.研究结果表明：当激光场的强度I₁=5.0×10¹³ W/cm²时,分子的解离来源于高振动态ν=5–9,其解离机理主要是通过键软化、键硬化和阈下解离过程.当激光场的强度I₂=1.0×10¹⁴ W/cm² 时,H₂⁺在低振动态ν=3–4上的阈上解离起主导作用,而高振动态的键软化、键硬化和阈下解离所占的比重明显地下降了.研究结果为后续的量子调控的实验研究提供了科学的理论预测和指导. 关键词： 光解离 氢分子离子 含时波包法 核动能谱     

表面粗糙度对面向等离子体钨材料溅射的影响

依据钨材料表面溅射的实验现象,建立钨材料表面粗糙模型,模拟了高能H⁺、He⁺粒子辐照下的钨材料表面的溅射行为过程,并与基于离子输运的双群模型计算得到的结果作了比较。结果表明,随着钨材料表面粗糙程度的增加,溅射率降低;对一定的粗糙表面,相同能量的不同入射粒子,质量越大粒子溅射率越高,这些结果为分析聚变装置中心等离子体杂质水平和评价偏滤器寿命等提供了一定的理论支撑。     

GaS/GaAs界面电学性质研究

报道了微波放电法在GaAs表面生长GaS薄膜．用电容 电压法（C-V）、伏安法（I-V）以及深能级瞬态谱（DLTS）等测试手段对GaS/GaAs界面的电学性质进行了研究．GaS/GaAs界面的CV特性反映此处的界面特性比较好，界面态密度约为10¹²/（cm²·eV）．DLTS的测试得到了与其一致的结果．另外，从I-V曲线中漏电流的大小，估算出GaS的电阻率为10¹¹Ω·cm 关键词：     

Hydrogen plasma treatment: desorption of atomic hydrogen from silicon surfaces studied by in-situ spectroscopic ellipsometry

The use of H₂ and Ar plasmas for the cleaning of crystalline Si surfaces has been investigated previously by in-situ spectroscopic ellipsometry, LEED and Auger spectroscopy. H₂ plasma treatment, followed by annealing at 700°C to desorb the adsorbed hydrogen, was found to produce high quality clean crystalline surfaces. Ellipsometry was shown to be sensitive not only to surface oxide layers and micro-roughness but also to hydrogen adsorbed on silicon surface. The desorption of hydrogen as a function of temperature from H₂ plasma treated Si (1 0 0) and (1 1 1) surfaces was investigated. The presence of different phases of adsorbed hydrogen was shown by spectroscopic ellipsometry, in agreement with UPS and EELS studies. The clean (plasma treated and annealed) Si (1 0 0) and Si (1 1 1) surfaces show differences in their apparent dielectric functions, which may be due to the nature of the surface reconstruction.     

Quantitative cleaning characterization of a lithium-fluoride iondiode

An ion source cleaning testbed was created to test plasma-cleaning techniques, and to provide quantitative data on plasma-cleaning protocols prior to implementation on the SABRE accelerator. The testbed was designed to resolve issues regarding the quantity of contaminants absorbed by the anode source (LiF), and the best cleaning methodology. A test chamber was devised containing a duplicate of the SABRE diode. Radio-frequency (RF) power was fed to the anode, which was isolated from ground and thus served as the plasma discharge electrode. RF plasma discharges in 1-3 mtorr of Ar with 10% O₂ were found to provide the best cleaning of the LiF surface. X-ray photoelectron spectroscopy (XPS) showed that the LiF could accrue dozens of monolayers of carbon just by sitting in a 2×10^-5 vacuum for 24 h. Tests of various discharge cleaning protocols indicated that 15 min of an Ar/O₂ discharge was sufficient to reduce this initial 13-45 monolayers of carbon impurities to 2-4 monolayers. Rapid recontamination of the LiF was also observed. Up to ten monolayers of carbon returned in 2 min after termination of the plasma discharge and subsequent pumping back to the 10^-5 torr range. Heating of the LiF also was found to provide anode cleaning. Application of heating combined with plasma cleaning provided the highest cleaning rates     

基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究

研究了基于电感耦合等离子体(ICP)刻蚀系统的InP基半导体材料的干法刻蚀.采用Cl2/Ar/H:混合刻蚀气体,分别研究了氯气体积分数和ICP功率与刻蚀速率之间的关系,及镍、二氧化硅和二者结合型掩膜版的适用范围.获得有效的刻蚀速率为450～1 200 nm/min,InP对金属镍的选择性刻蚀比值为175～190.掩膜版...     

采用ICP-MS/MS准确测定食品中钙和氯

建立利用电感耦合等离子体串联质谱测定食品中钙和氯的分析方法。针对Ca的高丰度同位素40Ca受到来自等离子气40Ar的干扰,35Cl受到来自16O18OH的严重干扰,在MS/MS模式下,利用碰撞/反应池技术,以H₂为反应气,使40Ar+与H₂发生反应,而40Ca+不与H₂发生反应,利用H₂原位质量法消除40Ar+对40Ca+的干扰;而35Cl+则能与H₂发生质量转移反应生成H₂35Cl+,通过测定H₂35Cl+消除16O18OH+对35Cl+的干扰。Ca和Cl在0.0~100.0 μg·L-1的浓度范围内线性关系良好,线性相关系数（R2）≥0.999 9,Ca和Cl的检出限分别为0.061和2.32 μg·L-1。采用系列国家标准物质验证了对方法的准确性和精密度,其测定结果与标准参考物质的认定值基本一致,表明方法的准确性好、精密度高。所建立的新方法可实现食品中钙和氯的准确测定。     

基于GaN同质衬底的高迁移率AlGaN/GaNHEMT材料

研究了表面预处理对GaN同质外延的影响,获得了高电子迁移率AlGaN/GaN异质结材料.通过NH_3/H_2混合气体与H_2交替通入反应室的方法对GaN模板和GaN半绝缘衬底进行高温预处理.研究结果表明,NH_3/H_2能够抑制GaN的分解,避免粗糙表面,但不利于去除表面的杂质,黄光带峰相对强度较高;H_2促进GaN分解,随时间延长GaN分解加剧,导致模板表面粗糙不平,AlGaN/GaN HEMT材料二维电子气迁移率降低.采用NH_3/H_2混合气体与H_2交替气氛模式处理模板或衬底表面,能够清洁表面,去除表面杂质,获得平滑的生长表面和外延材料表面,有利于提高AlGaN/GaN HEMT材料电学性能.在GaN衬底上外延AlGaN/GaN HEMT材料,2DEG迁移率达到2113 cm~2/V·s,电学性能良好.     

Characterization by electrolyte electroreflectance and X-ray photoelectron spectroscopy of amorphous Ni59Nb40Pt1−xSnx alloys and their activation by HF solutions

The influence of chemical etching with HF on the nature of the surface of amorphous Ni₅₉Nb₄₀Pt_1−xSn_x alloys has been studied in situ by electrolyte electroreflectance (EER) and ex situ by X-ray photoelectron spectroscopy (XPS). The EER spectrum of the untreated alloy in 0.5 M H₂SO₄ shows a bipolar band, which disappears after the HF treatment yielding a structureless EER spectrum similar to that of Pt, but reappears after several hours in the 0.5 M H₂SO₄ electrolyte. This process of dissolution by HF of an oxide species and its reappearance after a few hours cannot be followed by XPS, since the time interval between sample withdrawal from the electrolyte and actual measurement is of a few hours as well. XPS spectra showed the presence of metallic Nb before and after the HF treatment, and that niobium pentoxide was the main species in the as-quenched alloy, but that after treatment with HF it became a minor component, the main one being NbO. The main effect of the HF treatment is to produce a platinum enrichment of the surface, as unequivocally determined by cyclic voltammetry, XPS and EER. After Ar sputtering for 9 min the XPS spectrum of the untreated alloy showed metallic Nb only, while in the HF-treated alloy the peaks of metallic Nb were swamped by those of NbO and some Nb₂O₅. We interpret this difference as being due to the formation by the HF attack of a porous Nb film which becomes oxidized in the electrolyte and/or during transfer to the spectrometer, and so thick that it is not eliminated by Ar sputtering for 9 min.     

Effects of surface treatments and annealing on carbon-based molecular sieve membranes for gas separation

A new method in preparing carbon-based molecular sieve (CMS) membranes for gas separation has been proposed. Carbon-based films are deposited on porous Al₂O₃ disks using hexamethyldisiloxane (HMDSO) by remote inductively coupled plasma (ICP) chemical vapor deposition (CVD). After treating the film with ion bombardment and subsequent pyrolysis at a high temperature, carbon-based molecule sieve membranes can be obtained, exhibiting a very high H₂/N₂ selectivity around 100 and an extremely high permeance of H₂ around 1.5 × 10⁻⁶ mol m⁻² s⁻¹ Pa⁻¹ at 298 K. The O₂/N₂ selectivity could reach 5.4 with the O₂ permeance of 2 × 10⁻⁷ mol m⁻² s⁻¹ Pa⁻¹ at 423 K.

During surface treatments, HMDSO ions were found to be more effective than CH₄, Ar, O₂ and N₂ ions to improve the selectivity and permeance. Short and optimized surface treatment periods were required for high efficiency. Without pyrolysis, surface treatments alone greatly reduced the H₂ and N₂ permeances and had no effect on the selectivity. Besides, without any surface treatment, pyrolysis alone greatly increased the H₂ and N₂ permeances, but had no improvement on the selectivity, owing to the creation of large pores by desorption of carbon. A combination of surface treatment and pyrolysis is necessary for simultaneously enhancing the permeance and the selectivity of CMS membranes, very different from the conventional pore-plugging mechanism in typical CVD.     

Electrical conductivity and defect structure of Mg-doped Cr2O3

The electrical conductivity of Cr₂O₃ nominally doped with 2 mol% MgO has been studied by the four point a.c. technique as a function of the oxygen activity (O₂ + Ar, CO + CO₂ and H₂ + H₂O) in the temperature range 400–1200 °C. It is concluded that Cr₂O₃ doped with MgO is an extrinsic conductor and that the dissolved Mg-dopant is compensated by the formation of electron holes at near atmospheric oxygen pressures and by oxygen vacancies (or possibly interstitial chromium ions) at highly reduced oxygen activities (in CO + CO₂ and H₂ + H₂O gas mixtures). In H₂ + H₂O mixtures Mg-doped chromia also dissolves hydrogen as protons and significantly affects the defect structure and electrical conductivity. The defect structure of the oxide under various conditions is discussed.     

Evidence for bicarbonate formation on vacuum annealed TiO2(110) resulting from a precursor-mediated interaction between CO2 and H2O

The reaction of CO₂ and H₂O to form bicarbonate (HCO⁻₃) was examined on the nearly perfect and vacuum annealed surfaces of TiO₂(110) with temperature programmed desorption (TPD), static secondary ion mass spectrometry (SSIMS) and high resolution electron energy loss spectrometry (HREELS). The vacuum annealed TiO₂(110) surface possesses oxygen vacancy sites that are manifested in electronic EELS by a loss feature at 0.75 V. These oxygen vacancy sites bind CO₂ only slightly more strongly (TPD peak at 166 K) than do the five-coordinated Ti⁴⁺ sites (TPD peak at 137 K) typical of the nearly perfect TiO₂(110) surface. Vibrational HREELS indicates that CO₂ is linearly bound at the latter sites with a ν_a(OCO) frequency similar to the gas phase value. In contrast, oxygen vacancies dissociate H₂O to bridging OH groups which recombine to liberate H₂O in TPD at 490 K. No evidence for a reaction between CO₂ and H₂O is detected on the nearly perfect surface. In sequentially dosed experiments on the vacuum annealed surface at 110 K, CO₂ adsorption is blocked by the presence of preadsorbed H₂O, adsorbed CO₂ is displaced by postdosed H₂O, and there is little or no evidence for bicarbonate formation in either case. However, when CO₂ and H₂O are simultaneously dosed, a new CO₂ TPD state is observed at 213 K, and the 166 K state associated with CO₂ at the vacancies is absent. SSIMS was used to tentatively assign the 213 K CO₂ TPD state to a bicarbonate species. The 213 K CO₂ TPD state is not formed if the vacancy sites are filled with OH groups prior to simultaneous CO₂+H₂O exposure. Sticking coefficient measurements suggest that CO₂ adsorption at 110 K is precursor-mediated, as is known to be the case for H₂O adsorption on TiO₂(110). A model explaining the circumstances under which the proposed bicarbonate species is formed involves the surface catalyzed conversion of a precursor-bound H₂O–CO₂ van der Waals complex to carbonic acid, which then reacts at unoccupied oxygen vacancies to generate bicarbonate, but falls apart to CO₂ and H₂O in the absence of these sites. This model is consistent with the conditions under which bicarbonate is formed on powdered TiO₂, and is similar to the mechanism by which water catalyzes carbonic acid formation in aqueous solution.     

Passivation of TiO2 by ultra-thin Al-oxide

The passivation of sol–gel TiO₂ by ultra-thin layers of Al-oxide has been investigated using transient and spectral photovoltage (PV) techniques. The ultra-thin layers of Al-oxide were prepared by the ion-layer gas reaction (ILGAR) technique and modified by thermal treatments in air, vacuum or Ar/H₂S atmosphere. The samples where characterized by elastic recoil detection analysis (ERDA), X-ray photoelectron spectroscopy (XPS), and contact potential difference (CPD) technique. Without an Al-oxide surface layer, electronic states in the forbidden gap of TiO₂ are formed during thermal treatments in vacuum and Ar/H₂S. The trap density is strongly reduced at the TiO₂/Al-oxide interface. The formation of electronic defects is prevented by a closed ultra-thin layer of Al-oxide.