| 基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究 |
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| 引用本文： | 王琪,张金龙,王立军,刘云.基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究[J].发光学报,2011,32(12):1276-1280. |
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| 作者姓名： | 王琪 张金龙 王立军 刘云 |
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| 作者单位： | 1. 中国科学院 激发态重点实验室 长春光学精密机械与物理研究所, 吉林 长春 130033;
2. 中国科学院 研究生院, 北京 100039 |
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| 基金项目： | 国家自然科学基金(61106047,61176045,61106068,51172225);国家自然科学基金重点项目(90923037)资助项目 |
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| 摘 要： | 研究了基于电感耦合等离子体(ICP)刻蚀系统的InP基半导体材料的干法刻蚀.采用Cl2/Ar/H:混合刻蚀气体,分别研究了氯气体积分数和ICP功率与刻蚀速率之间的关系,及镍、二氧化硅和二者结合型掩膜版的适用范围.获得有效的刻蚀速率为450～1 200 nm/min,InP对金属镍的选择性刻蚀比值为175～190.掩膜版...
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| 关 键 词： | 固体掩膜版 电感耦合等离子体 InP 干法刻蚀 |
| 收稿时间： | 2011-07-24 |
Dry Etching of InP Material Based on Inductivity Coupled Plasma |
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| WANG Qi,ZHANG Jin-long,WANG Li-jun,LIU Yun.Dry Etching of InP Material Based on Inductivity Coupled Plasma[J].Chinese Journal of Luminescence,2011,32(12):1276-1280. |
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| Authors: | WANG Qi ZHANG Jin-long WANG Li-jun LIU Yun |
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| Institution: | 1. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Machines and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2. Graduate University of Chinese Academy of Sciences, Beijing 100039, China |
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| Abstract: | Dry etching of InP material based on inductivity coupled plasma(ICP) was thoroughly studied, Cl2/Ar/H2 gas mixture was adopted, and the etching depth could reach 10 μm with a vertical and a smooth surface. The gas percentages of the total gas versus etching rate, and the applicable regions of Ni, SiO2, and the combination of Ni and SiO2 were studied, respectively. The regions of the effective etching rate and selectivity against Ni are 450~1200 nm/min and 175~190,respectively. The choosing and fabrication approaches adopted are highly suitable for any semiconductor material based on ICP system. |
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| Keywords: | hard mask inductivity coupled plasma InP dry etching |
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