新型碳材料在钙钛矿太阳电池中的应用研究进展

新型碳材料如石墨烯及其氧化物、碳纳米管、富勒烯及石墨炔等因其优异的热学、力学、电学、光学性能成为了钙钛矿太阳电池研究的又一亮点. 本文总结了新型碳材料在钙钛矿太阳电池对电极、电子传输材料及空穴传输材料中的研究进展, 新型碳材料的引入有效地提高了钙钛矿电池的性能, 为下一步新型碳材料的应用开发以及钙钛矿电池器件的研究提供了新的思路.     

Pentacene as a hole transport material for high performance planar perovskite solar cells

A cost-effective and efficient organic semiconductor pentacene was developed as a hole transport layer (HTL) material to replace classical PEDOT:PSS for planar perovskite solar cells (PSCs). As expected, the pentacene based device exhibits power conversion efficiency (PCE) of 15.90% (J_sc of 19.44 mA/cm², V_oc of 1.07 V, and FF of 77%), comparable to the PEDOT:PSS based device (PCE of 15.65%, J_sc of 18.78 mA/cm², V_oc of 1.07 V, and FF of 77%) under the same experimental conditions. The excellent performance of vacuum deposited pentacene is mainly attributed to the high efficient charge extraction and transfer in device due to the high-quality perovskite film grown on the top of pentacene substrate and a favorable energy-level alignment together with a desired downward band bending formed at the perovskite/pentacene interface. Our research has confirmed that pentacene could be served as a promising HTL material to achieve effective and potentially economical planar type PSCs.     

Reveal the large open-circuit voltage deficit of all-inorganicCsPbIBr2 perovskite solar cells

Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic—inorganic hybrid perovskite solar cells (PSCs), but the larger voltage loss (V_loss) cannot be ignored, especially CsPbIBr₂, which limits the improvement of efficiency. To reduce V_loss, one promising solution is the modification of the energy level alignment between the perovskite layer and adjacent charge transport layer (CTL), which can facilitate charge extraction and reduce carrier recombination rate at the perovskite/CTL interface. Therefore, the key issues of minimum V_loss and high efficiency of CsPbIBr₂-based PSCs were studied in terms of the perovskite layer thickness, the effects of band offset of the CTL/perovskite layer, the doping concentration of the CTL, and the electrode work function in this study based on device simulations. The open-circuit voltage (V_oc) is increased from 1.37 V to 1.52 V by replacing SnO₂ with ZnO as the electron transport layer (ETL) due to more matching conduction band with the CsPbIBr₂ layer.     

Charge transfer modification of inverted planar perovskite solar cells by NiOx/Sr:NiOx bilayer hole transport layer

Perovskite solar cells (PSCs) are the most promising commercial photoelectric conversion technology in the future. The planar p-i-n structure cells have advantages in negligible hysteresis, low temperature preparation and excellent stability. However, for inverted planar PSCs, the non-radiative recombination at the interface is an important reason that impedes the charge transfer and improvement of power conversion efficiency. Having a homogeneous, compact, and energy-level-matched charge transport layer is the key to reducing non-radiative recombination. In our study, NiO$_{x}$/Sr:NiO$_{x}$ bilayer hole transport layer (HTL) improves the holes transmission of NiO$_{x}$ based HTL, reduces the recombination in the interface between perovskite and HTL layer and improves the device performance. The bilayer HTL enhances the hole transfer by forming a driving force of an electric field and further improves $J_{\rm sc}$. As a result, the device has a power conversion efficiency of 18.44%, a short circuit current density of 22.81 mA$\cdot$cm$^{-2}$ and a fill factor of 0.80. Compared to the pristine PSCs, there are certain improvements of optical parameters. This method provides a new idea for the future design of novel hole transport layers and the development of high-performance solar cells.     

Improving efficiency of inverted perovskite solar cells via ethanolamine-doped PEDOT:PSS as hole transport layer

In order to fabricate high-performance inverted perovskite solar cells (PeSCs), an appropriate hole transport layer (HTL) is essential since it will affect the hole extraction at perovskite/HTL interface and determine the crystallization quality of the subsequent perovskite films. Herein, a facile and simple method is developed by adding ethanolamine (ETA) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as HTL. The doping of a low-concentration ETA can efficiently modify the electrical properties of the PEDOT:PSS film and lower the highest occupied molecular orbital (HOMO) level, which is more suitable for the hole extraction from the perovskite to HTL. Besides, ETA-doped PEDOT:PSS will create a perovskite film with larger grain size and higher crystallinity. Hence, the results show that the open-circuit voltage of the device increases from 0.99 V to 1.06 V, and the corresponding power conversion efficiency (PCE) increases from 14.68% to 19.16%. The alkaline nature of ethanolamine greatly neutralizes the acidity of PEDOT:PSS, and plays a role in protecting the anode, leading the stability of the devices to be improved significantly. After being stored for 2000 h, the PCE of ETA-doped PEDOT:PSS devices can maintain 84.2% of the initial value, which is much higher than 67.1% of undoped devices.     

十二烷二酸修饰TiO_2电子传输层改善钙钛矿太阳电池的电流特性

在经典的平面异质结钙钛矿太阳电池中,TiO_2致密层的电子传输性能一直是获得优异光伏性能的决定性因素之一.相较于spriro-OMe TAD等常见的空穴传输材料优异的空穴传输能力,作为电子传输材料的TiO_2的导电性较弱,无法形成良好的电荷匹配.为了解决这个问题,我们使用自组装的十二烷二酸(DDDA)单分子层来修饰TiO_2致密层的表面,TiO_2致密层的导电性能得到大幅提升,并且其能带结构得到优化,促进了电子传输,降低了电子积聚和载流子复合,使得电池的短路电流密度(JSC)从修饰前的20.34 mA·cm~(-2)提升至修饰后的23.28 mA·cm~(-2),进而使得电池在标准测量条件下的光电能量转换效率从14.17%提升至15.92%.同时还发现,通过DDDA修饰TiO_2致密层,所制备的器件的光稳定性显著提升,器件未封装暴露在AM 1.5光强100 mW·cm~(-2)的模拟太阳光下超过720 min,保持初始效率的71%以上且趋于稳定.     

溶剂对钙钛矿薄膜形貌和结晶性的影响研究

溶剂对钙钛矿太阳能电池器件有着至关重要的影响. 基于目前常用的N, N-二甲基甲酰胺(DMF)和丁内酯(GBL)溶剂, 一步溶液旋涂技术和介孔电池结构, 制备的钙钛矿薄膜的形貌、结晶性, 以及最终的器件光电转化效率存在较大的差异, 利用DMF作为溶剂, 效率仅为2.8%, 而基于GBL的电池效率可以达到10.1%. 结合SEM, HRTEM, XRD和UV等表征手段, 分析了钙钛矿从DMF溶液和GBL溶液中结晶析出的不同机理, 明确了溶剂跟PbI₂的配位作用对钙钛矿的溶解、析出过程的制约作用, 揭示了造成器件效率差异的本质原因.     

DPVBi空穴阻挡层对OLED性能的优化

研究了宽带隙有机小分子材料DPVBi作为空穴阻挡层对OLED器件效率和亮度的优化作用.DPVBi的引入有效地改善了以PEDOT:PSS做空穴注入层的OLED器件的空穴过剩问题.实验结果表明:通过优化DPVBi的厚度,插入30 nm厚的DPVBi空穴阻拦层可以有效地平衡OLED器件的电子和空穴浓度,降低器件的工作电压,优...     

Sputtered SnO2 as an interlayer for efficient semitransparent perovskite solar cells

SnO₂ is widely used as the electron transport layer (ETL) in perovskite solar cells (PSCs) due to its excellent electron mobility, low processing temperature, and low cost. And the most common way of preparing the SnO₂ ETL is spin-coating using the corresponding colloid solution. However, the spin-coated SnO₂ layer is sometimes not so compact and contains pinholes, weakening the hole blocking capability. Here, a SnO₂ thin film prepared through magnetron-sputtering was inserted between ITO and the spin-coated SnO₂ acted as an interlayer. This strategy can combine the advantages of efficient electron extraction and hole blocking due to the high compactness of the sputtered film and the excellent electronic property of the spin-coated SnO₂. Therefore, the recombination of photo-generated carriers at the interface is significantly reduced. As a result, the semitransparent perovskite solar cells (with a bandgap of 1.73 eV) based on this double-layered SnO₂ demonstrate a maximum efficiency of 17.7% (stabilized at 17.04%) with negligible hysteresis. Moreover, the shelf stability of the device is also significantly improved, maintaining 95% of the initial efficiency after 800-hours of aging.     

二硫化钨纳米片制备及其钙钛矿太阳能电池空穴传输层应用

开发新型无机空穴传输层材料是钙钛矿电池实现商业应用的重要挑战之一。本文开展了二硫化钨纳米片制备及其钙钛矿太阳能电池空穴传输层应用研究。采用液相超声剥离法成功制备了WS 2纳米片,并将其引入钙钛矿太阳能电池中用作空穴传输层。结果表明,当WS 2纳米片溶液浓度为1 mg/mL时,制备的WS 2纳米片空穴传输层具有较合适的厚度,并且后续在其上生长的钙钛矿活性层成膜质量高、结晶性能好,电池取得6.3%的光电转换效率。结果证实WS 2纳米片可作为新型无机空穴传输层材料用于钙钛矿太阳能电池。     

Overcoming the thickness paradox: Systematical optimization of inverted polymer solar cells

Inverted structure comes out to be a promising alternative for making polymer solar cells (PSC) with high efficiency and long-term stability. Vertically stacked functional layers with planar shapes often suffer contradictions in holding high optical absorption and excellent charge transfer/hindrance capability to construct well performed inverted PSC devices. Here, we give an example of rational control of the thickness of electron transport layer (ETL), hole transport layer (HTL) and organic active layer (OAL) to achieve a synergistic effect on promoting the overall photovoltaic behaviors. With in-depth exploration of the interaction between device performance and layer thickness, we obtain the optimized device ITO/ZnO Ncs (45 nm)/P3HT:PCBM (70 nm)/MoO₃ (1 nm)/Ag (70 nm) exhibiting an V_oc of 0.63 V, J_sc of 12.52 mA/cm², FF of 54% and PCE of 4.26%.     

退火温度对电子束蒸发沉积Cu_2O薄膜性能的影响

近年来,钙钛矿太阳电池(PSCs)得到了迅猛发展,而无机空穴传输材料(IHTMs)的使用可进一步降低电池的成本,提高电池的稳定性.本文通过电子束蒸发制备了Cu_2O薄膜,研究了空气中退火温度及时间对薄膜组成、结构及光电性能的影响,并构筑了p-i-n反型平面异质结钙钛矿太阳电池.研究发现:由于热解作用,直接通过电子束蒸发制备的薄膜为Cu_2O和Cu的混合物;而在空气中经过退火后,由于氧化作用,随着退火温度的升高,薄膜的组分由混合物转变为纯的Cu_2O,再转变成纯的CuO.通过控制退火温度制备的Cu_2O薄膜的光学带隙约为2.5 eV,载流子迁移率约为30 cm~2·V~(-1)·s~(-1).应用于PSCs,薄膜的最佳厚度为40 nm,但电池性能低于PEDOT:PSS基的PSCs.这主要是由于钙钛矿前驱液在Cu_2O薄膜的润湿性较差,吸收层中有大量微孔洞存在,致使漏电流增强,电池的性能降低.然而,当采用Cu_2O/PEDOT:PSS双HTMs设计时,由于PEDOT:PSS对Cu_2O具有较强的腐蚀作用,使电池性能恶化.     

新型空穴传输材料在钙钛矿太阳能电池中的研究进展

钙钛矿太阳能电池是一种全新的全固态薄膜电池. 报道的能量转换效率已提高到19.3%, 成为可再生能源领域的热点研究方向. 空穴传输材料是构成高效钙钛矿太阳能电池的重要组分之一. 本文介绍了钙钛矿太阳能电池的基本结构, 对空穴传输材料的分子结构、能级水平和迁移率等对电池性能的影响进行了详细的总结和评述.     

High efficiency ETM-free perovskite cell composed of CuSCN and increasing gradient CH3NH3PbI3

To enhance device performance and reduce fabrication cost,a series of electron transporting material(ETM)-free perovskite solar cells(PSCs)is developed by TCAD Atlas.The accuracy of the physical mode of PSCs is verified,due to the simulations of PEDOT:PSS-CH₃NH₃PbI₃-PCBM and CuSCN-CH₃NH₃PbI₃-PCBM p-i-n PSCs showing a good agreement with experimental results.Different hole transporting materials(HTMs)are selected and directly combined with n-CH₃NH₃PbI₃,and the CuSCN-CH₃NH₃PbI₃ is the best in these ETM-free PSCs.To further study the CuSCN-CH₃NH₃PbI₃ PSC,the influences of back electrode material,gradient band gap,thickness,doping concentration,and bulk defect density on the performance are investigated.Energy band and distribution of electric field are utilized to optimize the design.As a result,the efficiency of CuSCN-CH₃NH₃PbI₃ PSC is achieved to be 26.64%.This study provides the guideline for designing and improving the performances of ETM-free PSCs.     

基于MADN空穴传输层的双层结构高效率黄绿光OLED及其阻抗谱分析

以MADN为空穴传输层,主-客掺杂体系[Alq₃∶0.7 Wt%rubrene]为发光兼电子传输层,构建了双层结构的高效率黄绿光OLED器件。该器件的黄绿光由主发光体Alq₃通过不完全能量转移到客发光体rubrene实现,电致发光峰值位于560 nm,1931CIE色坐标为(0.46, 0.52),最大发光效率达到了7.63 cd·A-1,比相应的NPB做空穴传输层的双层结构器件提高了30%。通过构建以MADN或NPB为空穴传输层的空穴单载流子器件并进行阻抗谱分析,结果表明MADN可以作为一种非常有效的空穴传输层,其空穴迁移性略低于NPB,这恰好弥补了OLED器件中空穴迁移比电子迁移快这一缺陷,为改善OLED发光层中载流子的平衡性创造了条件,从而提高了器件的发光效率。此外,MADN做空穴传输层的双层结构OLED的发光效率与传统三层结构器件(MADN和Alq₃分别作为空穴传输层和电子传输层)基本相当,表明了这种双层结构器件在简化器件结构的同时并不以牺牲发光效率为代价,发光层[Alq₃∶0.7 Wt%rubrene]兼具有优良的电子传输性能。     

Efficiency enhancement of fluorescent blue organic light-emitting diodes using doped hole transport and emissive layers

The electroluminescent characteristics of blue organic light-emitting diodes(BOLEDs) fabricated with doped charge carrier transport layers are analyzed. The fluorescent blue dopant BCzVBi is doped in an emissive layer,hole transport layer(HTL) and electron transport layer(ETL), respectively, to optimize the probability of exciton generation in the BOLEDs. The luminance and luminous efficiency of BOLEDs made with BCzVBi-doped HTL and ETL increase by 22% and 17% from 11,683 cd/m2 at 8.5 V and 6.08 cd/A at 4.0 V to 14, 264 cd/m2 at8.5 V and 7.13 cd/A at 4.0 V while CIE coordinates of(0.15, 0.15) of both types of BOLEDs remained unchanged. The electron mobility of BCzVBi is estimated to be 1.02 x 10_o cm2/Vs by TOF.     

高效无空穴传输层碳基钙钛矿太阳能电池的制备与性能研究

碳基钙钛矿太阳能电池因稳定性高、成本低廉而备受关注,但由于钙钛矿与碳电极之间能级匹配度不高,界面阻力大而导致效率不及金属基钙钛矿太阳能电池.本文制备了碳基无空穴传输层FTO/c-TiO₂/m-TiO₂/CH₃NH₃PbI₃/Carbon电池结构.通过对介孔二氧化钛层、钙钛矿层厚度进行优化,并对钙钛矿的薄膜形貌及钙钛矿激发电子寿命、可见光吸收度、载流子的提取与分离等进行深度分析,讨论了电池效率提升的内在机理.当介孔氧化钛层和钙钛矿层达到最优厚度时,钙钛矿太阳能电池获得了开路电压（V_oc）为0.93 V、电流密度（J_sc）为21.75 mA/cm²、填充因子为55%、光电转化效率达到11.11%.同时对电池进行了稳定性研究,在室温湿度为40%–50%的条件下放置15 d电池性能依旧稳定保持原来的95%,优于金属基钙钛矿太阳能电池,从而为碳电极钙钛矿太阳能电池的商业化发展提供了可能.     

Observation of large in-plane anisotropic transport in van der Waals semiconductor Nb2SiTe4

Two-dimensional (2D) van der Waals material is a focus of research for its widespread application in optoelectronics, memories, and spintronics. The ternary compound Nb₂SiTe₄ is a van der Waals semiconductor with excellent air stability and small cleavage energy, which is suitable for preparing a few layers counterpart to explore novel properties. Here, properties of bulk Nb₂SiTe₄ with large in-plane electrical anisotropy are demonstrated. It is found that hole carriers dominate at a temperature above 45 K with a carrier active energy of 31.3 meV. The carrier mobility measured at 100 K is about 213 cm²·V^-1·s^-1 in bulk Nb₂SiTe₄, higher than the reported results. In a thin flake Nb₂SiTe₄, the resistivity ratio between the crystalline axes of a and b is reaching about 47.3 at 2.5 K, indicating that there exists a large anisotropic transport behavior in their basal plane. These novel transport properties provide accurate information for modulating or utilizing Nb₂SiTe₄ for electronic device applications.     

双电子传输层对有机发光二极管效率及其衰减的改善

采用Bphen和BCP制成双电子传输层(Doubleelectrontransportlayers, DETLs)的有机发光二极管器件, 与Bphen单独作ETL的器件相比, DETLs器件具有较小的空穴漏电流, 效率提升10%。与BCP独自作ETL的器件相比, 更多的电子注入使DETLs器件的效率在50~600mA/cm²的电流范围内没有衰减。BCP作ETL的器件的效率从50mA/cm²时的2.5cd/A衰减至300mA/cm²的2.1cd/A, 衰减了16%。Cs₂CO₃:BCP独自作ETL的器件效率在50~300mA/cm²的电流范围内衰减了30%, 而Bphen/Cs₂CO₃:BCP作DETLs的器件效率在50~600mA/cm²的电流范围内衰减幅度为0, 原因是Bphen阻挡了Cs原子扩散至发光层。     

钙钛矿薄膜气相制备的晶粒尺寸优化及高效光伏转换

钙钛矿薄膜的气相制备是一种极具潜力的工业化生产工艺,但薄膜的质量控制目前远落后于溶液制备法.本文通过建立PbI_2薄膜向钙钛矿薄膜完全转化过程中反应时间、晶粒尺寸与温度的关系,实现了薄膜的质量优化及大面积钙钛矿薄膜的制备,将薄膜的平均晶粒粒径从0.42μm优化到0.81μm.基于空间电荷限制电流模型对缺陷密度的研究显示,钙钛矿薄膜的缺陷密度由5.90×10~(16)cm~(–3)降低到2.66×10~(16)cm~(–3).光伏器件(FTO/TiO_2/C_(60)/MAPbI_3/spiro-OMeTAD/Au结构)测试显示,面积为0.045cm~2器件的平均光电转换效率从14.00%提升到17.42%,最佳光电转换效率达到17.80%,迟滞因子减小至4.04%.同时,基于180℃制备的1cm~2器件的光电转换效率达到13.17%.