| DPVBi空穴阻挡层对OLED性能的优化 |
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| 引用本文： | 廖亚琴,甘至宏,刘星元.DPVBi空穴阻挡层对OLED性能的优化[J].发光学报,2011,32(10):1041-1045. |
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| 作者姓名： | 廖亚琴 甘至宏 刘星元 |
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| 作者单位： | 1. 中国科学院 激发态物理重点实验室 长春光学精密机械与物理研究所, 吉林 长春 130033;
2. 中国科学院 研究生院, 北京 100039 |
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| 基金项目： | 吉林省科技发展计划(20090346,20100570)资助项目 |
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| 摘 要： | 研究了宽带隙有机小分子材料DPVBi作为空穴阻挡层对OLED器件效率和亮度的优化作用.DPVBi的引入有效地改善了以PEDOT:PSS做空穴注入层的OLED器件的空穴过剩问题.实验结果表明:通过优化DPVBi的厚度,插入30 nm厚的DPVBi空穴阻拦层可以有效地平衡OLED器件的电子和空穴浓度,降低器件的工作电压,优...
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| 关 键 词： | 有机电致发光器件 空穴阻挡层 DPVBi |
| 收稿时间： | 2011-03-20 |
Improvement of OLED Performance by Using DPVBi as Hole-blooking Layer |
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| LIAO Ya-qin,GAN Zhi-hong,LIU Xing-yuan.Improvement of OLED Performance by Using DPVBi as Hole-blooking Layer[J].Chinese Journal of Luminescence,2011,32(10):1041-1045. |
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| Authors: | LIAO Ya-qin GAN Zhi-hong LIU Xing-yuan |
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| Institution: | 1. Laboratory of Exicited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2. Graduate School of Chinese Academy of Sciences, Beijing 100039, China |
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| Abstract: | High performance organic light emitting devices (OLEDs) should have a low operating voltage, high efficiency and relatively good stability. Inserting of a hole blocking layer (HBL) between hole transporting layer (HTL) and electron transporting layer (ETL) is one of the effective method to improve device performances. In this paper, a DPVBi HBL was incorporated in OLED between the PEDOT∶PSS hole injection layer (HIL) and Alq3 ETL. Such a structure helps to reduce the hole-leakage of the cathode, which resulting an enhanced device performances. The optimized device with a thickness of 30 nm DPVBi HBL shows a signi-ficantly improved current efficiency (5.2 cd/A) and luminance (24 350 cd/m2), which is 20% and 87% higher compared with those data of reference device with the structure of ITO/PEDOT∶PSS/NPB/Alq3/LiF/Al. |
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| Keywords: | OLED hole blocking layer DPVBi |
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