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High-power laser interference lithography process on photoresist: Effect of laser fluence and polarisation |
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| Authors: | M Ellman A Rodríguez M Echeverria CS Peng Z Wang I Ayerdi |
| Institution: | a CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018, San Sebastián, Spain b Institute of Applied Physics, 46 Ul’yanova Street, 603600 Nizhny Novgorod, Russia c ORC (Tampere University of Technology), Korkeakoulunkatu 3, 33720 Tampere, Finland d SILIOS Technologies SA, Rue Gaston Imbert prolongée 13790 Peynier, France e MEC (Cardiff University), Queen's Buildings, The Parade, Newport Road, Cardiff CF24 3AA, UK |
| Abstract: | High throughput and low cost fabrication techniques in the sub-micrometer scale are attractive for the industry. Laser interference lithography (LIL) is a promising technique that can produce one, two and three-dimensional periodical patterns over large areas. In this work, two- and four-beam laser interference lithography systems are implemented to produce respectively one- and two-dimensional periodical patterns. A high-power single pulse of ∼8 ns is used as exposure process. The optimum exposure dose for a good feature patterning in a 600 nm layer of AZ-1505 photoresist deposited on silicon wafers is studied. The best aspect ratio is found for a laser fluence of 20 mJ/cm2. A method to control the width of the sub-micrometer structures based on controlling the resist thickness and the laser fluence is proposed. |
| Keywords: | Laser interference lithography LIL Photoresist Surface nanostructuring Pulsed lithography |
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