软模板纳米压印技术及其对共轭高分子的取向控制研究

纳米压印模板通常需要经过电子束光刻、电子束沉积、光刻胶剥离、反应离子刻蚀等一系列复杂工艺获得,这使得纳米压印模板的制作难度大,成本高. 寻找一种灵活简单的纳米压印模板制备方法以提升纳米压印模板的制作效率,是广泛应用纳米压印技术的研究重点和难点. 本文以写好光栅结构的电子束光刻胶层为母模板,获得聚二甲基硅氧烷软模板,并以此为模板对共轭高分子聚(9,9-二辛基)芴薄膜进行纳米压印,实现光栅结构转移,成功制备出纳米光栅结构的共轭高分子薄膜. 偏振吸收谱和透射电镜结果表明,纳米压印实现图案转移的同时,还可以将共轭高分子的主链控制在光栅条纹方向,这对有机发光器件性能的提升具有重要的意义. 研究结果还表明,应用该方法同样可以对聚(9,9-二辛基芴共苯并噻二唑)薄膜进行光栅图案化,同时实现其取向控制. 关键词： 纳米压印 软模板共轭高分子 分子链取向     

用PAA模板法实现硅基纳米孔阵列结构

用二次阳极氧化方法制备出分立、双向贯通并且超薄（500—1000 nm）的多孔阳极氧化铝膜,贴合到硅片上进行干法刻蚀,实现图形转移,得到了硅基纳米孔阵列结构,并对工艺中影响图形转移质量的因素进行了探索.扫描电镜（SEM）测试结果表明该途径得到的纳米结构孔形态均匀且大面积有序,孔深度可达到125 nm.对该样品进行热氧化处理后进行光致发光（PL）测试,结果表明其光致发光机理是基于通常较微弱的TO声子辅助的硅带边发光,并实现了显著发光增强,对这种增强效果的物理机理进行了理论分析.该结构具有的独特光学特性为利用 关键词： 多孔阳极氧化铝模板 硅基纳米孔阵列结构 图形转移     

添加剂对纳米压印模板光栅结构填充效果的改善作用

为改善电铸填充高深宽比纳米光栅结构时出现的空洞现象,本文向电铸液中添加平整剂健那绿,利用健那绿分子的静电吸附原理消除该工艺缺陷.结合纳米压印技术及电铸工艺,在柔性基底上完成了纳米压印镍模板的复制.复制过程中,首先通过热压将硅原始模板上的纳米光栅结构转移到聚合物基底上,制作出压印所需的软模板;然后采用溅射工艺在聚合物基底纳米结构表面沉积镍种子层并通过电铸工艺完成纳米光栅结构的填充及复制模板背板的生长;最后将铸层与聚合物基底进行分离.通过此工艺,成功复制了一块带有6个1.3mm×1.3mm纳米光栅区域的纳米压印镍模板,模板表面光栅周期为201nm,线宽98nm,深度104nm.与原始硅模板相比,复制模板特征尺寸偏差在5%以内,表明复制模板特征尺寸与相应原始模板特征尺寸之间有良好的一致性.热压实验后复制模板表面光栅结构周期无偏差,线宽偏差在2%以内,实验结果表明复制的纳米压印模板机械强度足以适用于热压过程.     

用于折射率传感的聚合物基狭缝波导的模拟与制备

设计了在极近红外波段(890 nm)的聚合物基狭缝波导微环折射率传感器.分析了波导高度、宽度及狭缝宽度对灵敏度的影响,以找到最佳的设计标准用于折射率传感.采用电子束光刻工艺制备了硅母版模,并用独特的氟化聚合物PFPE从硅母版模上成功制备了柔性软模具.采用紫外软压印工艺制备了聚合物基狭缝波导.波导的宽度和高度以及狭缝波导的宽度分别约为510 nm、830 nm和234 nm,聚合物狭缝波导残留层的厚度约为350 nm.制备的狭缝波导具有高的高宽比并与低成本批量生产工艺相兼容.     

硅表面抗反射纳米周期阵列结构的纳米压印制备与性能研究

硅表面固有的菲涅耳反射, 使得硅基半导体光电器件(如太阳能电池、红外探测器)表面有30%以上的入射光因反射而损失掉, 严重影响着器件的光电转换效率. 寻找一种方法降低硅基表面的反射率, 进而提高器件的效率成为近年来研究的重点.本文基于纳米压印光刻技术, 在2 英寸单晶硅表面制备出周期530 nm, 高240 nm的二维六角截顶抛面纳米柱阵列结构. 反射率的测试表明, 当入射光角度为8° 时, 有纳米结构的硅片相对于无纳米 结构的硅片来讲, 在400到2500 nm波长范围内的反射率有很明显的降低, 其中, 800到2000 nm波段的反射率都小于10%, 在波长1360 nm附近的反射率由31%降低为零. 结合等效介质理论和严格耦合波理论对结果进行了分析和验证. 关键词： 纳米压印 截顶抛物面阵列 抗反射 等效介质理论     

一种可控纳米柱阵列的研制

在一次阳极氧化法制备多孔氧化铝(anodized aluminum oxide,AAO)的基础上,进行了二次、三次、四次氧化制备AAO,并对多次氧化制备多孔AAO的电流变化曲线和模板表面的形貌特点等进行了比较分析.二次、三次、四次氧化制备的AAO纳米孔孔径依次增大、孔间距减小,而模板表面的纳米孔有序性分布没有明显变化.控制一次氧化AAO模板的除膜时间,～10 min即可得到孔径规则、高度有序的AAO膜.最后,利用所制备的不同孔深和孔径的AAO为模板,通过热纳米压印复制技术制备了长度和直径等性质可控的PMMA纳米柱阵列. 关键词： 纳米柱阵列 聚甲基丙烯酸甲酯 多孔氧化铝模板 多次氧化法     

CdS纳米颗粒填充的自支撑多孔硅光致发光特性

为了研究CdS纳米颗粒填充的自支撑多孔硅的光致发光特性,选用电阻率为0.01~0.02Ω·cm的P型硅片,先采用二步阳极氧化法制备自支撑多孔硅,再利用电泳法将CdS纳米颗粒填充入该自支撑多孔硅中.采用扫描电子显微镜、X射线能谱分析、X射线衍射分析、光致发光谱分析对所制备样品的形貌、相结构、组份及发光性能进行研究.实验结果表明:自支撑多孔硅内部成功填充了CdS纳米颗粒,该CdS纳米颗粒衍射峰为(210);CdS纳米颗粒填充的自支撑多孔硅光致发光峰峰位发生红移,且从570nm转移到740nm;电泳时间直接影响CdS纳米颗粒的填充量,导致相关的发光峰强度及发光峰位明显不同.     

电子束蒸发法在多孔氧化铝膜上制备银纳米点阵列

采用二步阳极氧化法在草酸溶液中制备了高度有序的多孔阳极氧化铝(Porous Anodic Alumina,PAA)薄膜。以多孔氧化铝薄膜为模板,采用真空电子束蒸发的方法在多孔氧化铝模板上制备出了高度有序的金属银纳米点阵列体系。扫描电镜(SEM)测试结果表明,所制备的金属银纳米点阵列与多孔阳极氧化铝膜的多孔阵列具有完全相同的有序结构,阵列中银纳米颗粒的形状接近球形,其直径大约为70nm,与氧化铝模板的孔径基本一致。研究了高度有序银纳米点阵列的形成过程。     

罗丹明6G在银纳米线阵列上的SERS光谱研究

制备出有序、均匀的活性衬底一直足表面增强拉曼散射(SERS)研究中的关键.阳极氧化法制备的多孔氧化铝膜的结构有序、均匀,为纳米金属SERS基底的制备提供了模板.以沉积了银的多孔氧化铝组装体为衬底,研究了罗丹明6G(Rh6G)分子的表面增强拉曼散射光谱.结果表明,沉积了银的多孔氧化铝模板是很好的SERS衬底,Rh6G分子在此衬底上的SERS谱强度与银纳米线在表面的显露高度有关,而其拉曼频移未受表面状态的影响,而PO43-离子的存在使SERS强度得到很大提高.     

纳电子器件中的超低介电常数材料与多孔SiCOH薄膜研究

65nm以下线宽的纳电子器件，要求采用介电常数k小于2的超低介电常数材料作为层间和线间绝缘介质，等离子体增强的化学气相沉积技术制备的硅基纳米多孔薄膜，提供了实现k〈2的可能性，多孔SiCOH薄膜成为最具希望的候选材料，但是，纳米孔的引入带来了材料其他性能恶化、集成工艺困难、薄膜微结构分析等许多新问题．文章介绍了多孔SiCOH（超）低k薄膜研究的主要进展及面临的挑战．     

Fabrication of semiconductor-and polymer-based photonic crystals using nanoimprint lithography

The technology of fabricating photonic crystals with the use of nanoimprint lithography is described. One-and two-dimensional photonic crystals are produced by direct extrusion of polymethyl methacrylate by Si moulds obtained via interference lithography and reactive ion etching. The period of 2D photonic crystals, which present a square array of holes, ranges from 270 to 700 nm; the aperture diameter amounts to the half-period of the structure. The holes are round-shaped with even edges. One-dimensional GaAs-based photonic crystals are fabricated by reactive ion etching of GaAs to a depth of 1 μm through a mask formed using nanoimprint lithography. The resulting crystals have a period of 800 nm, a ridge width of 200 nm, and smooth nearly vertical side walls.     

Replication of mold for UV-nanoimprint lithography using AAO membrane

A simple and highly effective method to the replication of soft mold based on the anodic aluminum oxide (AAO) membrane was developed. The soft mold with nanopillar arrays was composed of the toluene diluted PDMS layer supported by the soft PDMS. A water contact angle as high as 114° was achieved. The hexagonally well-order arrays of holes of nanometer dimensions, ∼100 nm pore diameter and 125 nm center-to-center pore, could be gained over large areas by UV-nanoimprint lithography (UV-NIL) with the replicated soft PDMS mold. It is expected that the developed soft mold would find applications in light emitting diodes devices.     

Simple fabrication of hexagonally well-ordered AAO template on silicon substrate in two dimensions

In this study, thin anodic aluminum oxide (AAO) templates both on silicon substrates (AAO template/SiO₂/Si) and Ti-coated silicon substrates (AAO template/Ti/SiO₂/Si) were developed for design of magnetic, electronic and optoelectronic devices, chemical sensors and chip-scale lithium-ion rechargeable microbatteries. Two types of AAO template were prepared by using a two-step anodization procedure. The templates were characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. The obtained thin AAO templates were approximately 50 nm in diameter and 700 nm in length with 80-nm interpore distances in a relatively large area of 6 cm². A barrier layer of the AAO templates was removed by a cathodic polarization method in KCl solution for several seconds. The current–time transient during removing the alumina barrier layer of the thin AAO template and the mechanism of electrochemical dissolution of the barrier layer are given in detail.     

Temperature dependence of a nanoporous Pd film hydrogen sensor based on an AAO template on Si

In this study, hydrogen sensing properties of nanoporous Pd films based on Anodic Aluminium Oxide (AAO) templates grown on a silicon substrate have been investigated at various temperatures (25–100°C) and hydrogen concentrations (100–1000 ppm) to determine the temperature-sensitivity relationship. For this purpose, a hexagonally shaped AAO template of approximately 50 nm in diameter and 700 nm in length with 80 nm interpore distances was fabricated using two-step anodization of an Al film deposited on an n-type (100) oriented oxidized Si substrate. Then, the nanoporous surface of the AAO template was used as a substrate for supporting a nanoporous Pd film of an approximately thickness of 60 nm. The morphologies of the AAO template and Pd film coated on the AAO template were studied mainly by Scanning Electron Microscopy (SEM). Hydrogen sensing properties of the nanoporous Pd film were measured using a resistance transient method. It was found that the sensor response of the nanoporous Pd films on the AAO template was better than the traditional Pd thin film sensors, the sensitivity of the sensor was approximately 1.8% for 1000 ppm H₂, and the detection limit was lower than 100 ppm at room temperature. The highest sensitivity was measured at room temperature.     

Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography

We present a fabrication procedure that can form large-scale periodic silicon nanopillar arrays for 2D nanomold which determines the feature size of nanoimprint lithography, using modified nanosphere lithography. The size of silicon nanopillars can be easily controlled by an etching and oxidation process. The period and density of nanopillar arrays are determined by the initial diameter of polystyrene (PS) spheres. In our experiment, the smallest nanopillar has a full width half maximum (FWHM) of approximately 50 nm, and the density of silicon pillar is ∼10⁹/cm². Using this approach, it is possible to fabricate 2D nanoimprint lithography mask with 50 nm resolution.     

Template preparation of Pt nanowire array electrode on Ti/Si substrate for methanol electro-oxidation

Platinum (Pt) nanowire array electrode is obtained by dc electrodeposition of Pt into the pores of anodic aluminum oxide (AAO) template on Ti/Si substrate. Transmission electron microscope (TEM) examination shows all the nanowires have uniform diameter of about 30 nm. The brush shapes Pt nanowire array electrode can be seen clearly by field emission scanning electron microscope (FESEM). Pt nanowire array electrode gives the X-ray diffraction (XRD) pattern of face-centered cubic (fcc) crystal structure. The electro-oxidation of methanol on this electrode is investigated at room temperature by cyclic voltammetry. The results demonstrated that the Pt nanowire array electrode will have good potential applications in portable power sources.     

Controllable fabrication of highly ordered thin AAO template on Si substrate for electrodeposition of nanostructures

In this work, simple fabrication of hexagonally highly ordered porous anodic aluminum oxide (AAO) of Al thin film (1 μm) on Si substrate is described using two-step anodization method for electrochemical synthesis of nanostructures. In this method, the templates were prepared under the controllable conditions of the parameters, which give rise to the possibility of highly ordered nanopore arrays with a well aspect ratio. Pore widening was then fulfilled in 5 wt% phosphoric acid solution at 25 °C. The pore diameter and spacing are proportional to the applied voltage, which is due to the mechanical stress associated with the volume expansion of the aluminum during the anodization according to the mechanical stress model. Pore-widening solution adjusted the pore diameter and thinned the AAO barrier layer at room temperature under the control of etching time. As an application, Cu nanorods arrays embedded in anodic alumina (AAO) template were fabricated by dc electrodeposition. The characterization of the AAO templates and the Cu nanorods produced was made by X-ray diffraction, field emission scanning microscope, energy dispersive X-ray spectroscopy and atomic force microscope (AFM). The images of AFM show that porous AAO template under constant voltage is 40 V which presents the optimum ordering.     

产生量子点的一种新方法(英文)

我们提出并试验了一种制备量子点阵的新方法。利用二步法制备的阳极氧化铝上规则排列纳米洞为模板,以紫外脉冲激光(2 48nm)溅射方法将氧化物经过带纳米洞的模板溅射到单晶Si的衬底上。以荧光材料La0 .95Eu0 .0 5BaB9O16 为靶材,初步获得了Si衬底上荧光材料的点阵。