GexSb20Se80-x玻璃的拉曼光谱和X射线光电子能谱

用拉曼散射光谱和X射线光电子能谱研究了Ge_xSb₂₀Se_80-x(x=5 mol%, 10 mol%, 15 mol%, 17.5 mol%, 20 mol%和25 mol%)玻璃的结构. 通过对拉曼光谱和X射线光电子能谱(Ge 3d, Sb 4d 和Se 3d谱)进行分解, 发现当硫系玻璃处于富Se状态下时, 玻璃结构中会出现Se–Se–Se结构单元, 其数量随着Ge含量的增加而迅速减少, 并最终在Ge₁₅Sb₂₀Se₆₅玻璃结构中消失; Ge和Sb原子分别以GeSe_4/2 四面体和SbSe_3/2三角锥结构单元在玻璃结构中出现, GeSe_4/2四面体结构单元的数量会随着Ge浓度的增加而增加, 而SbSe_3/2三角锥结构单元的数量基本保持稳定. 另一方面, 在缺Se的硫系玻璃中, 玻璃会有Ge–Ge和Sb–Sb同极键产生, 随着Ge含量的增大, 这种同极键的数量会越来越多; 而GeSe_4/2四面体和SbSe_3/2三角锥结构的数量则相应减少. 在所有玻璃样品的结构中均有同极键Se–Se的存在. 当玻璃组分越接近完全化学计量配比时, 异质键Ge–Se和Sb–Se将占据玻璃结构中的主导地位, 同极键Ge–Ge, Sb–Sb和Se–Se 的比例降为最小.     

换能器间距对SAW器件特性的影响

如以如H_i(ω)(i=1,2)表示输入输出换能器(含匹配电路)的频率特性,R_i(ω)(i=1,2)表示二者对声表面波的反射系数,T(ω)表示声表面波传播路径的频率特性,则声表面波器件的主信号响应、三次行程信号(TTE)响应以及考虑了TTE影响之后器件的总响应分别为: H_d(ω)=H_1(ω)H_2(ω)T(ω) (1) TTE(ω)=H_1(ω)H_2(ω)T~3(ω)R_1(ω)R_2(ω) (2) H(ω)=H_d(ω)+TTE(ω)=H_d(ω)[1+T~2(ω)R_1(ω)R_2(ω)(3) 设/R_i(ω)/=r_i(ω),arg{R_i(ω)}=φ_i(ω)。二者与外电路有关。在良好匹配下,r_i(ω_0)=1/2(通常小于此值),在调谐情况下运用,φ_i(ω_0)=π。通常r_i(ω)≤r_i(ω_0),且随着频偏的增大而减小的速度大于H_i(ω)。如以两换能器间的间距为x,则一般情况下T(ω)=Texp[jωx/v](v为基片中声表面波的速度)。T<1,且随x的增大而降低。但一般器件x为几十个波长,故T总是接近于1而变化不大。如令 θ(ω)=2ωx/v+φ_1(ω)+φ_2(ω) (4)     

S取代Se对Ge_(11.5)As_(24)Se_(64.5–x)S_x玻璃结构及光学性质的影响

本文制备了硫系玻璃Ge_(11.5)As_(24)Se_(64.5–x)S_x (x=0, 16.125%, 32.25%, 48.375%和64.5%)并研究了其光学性质,目的在于筛选可用于光学器件的最佳组分.通过测试该系列玻璃的激光损伤阈值、折射率、三阶非线性折射率以及吸收光谱,结果发现,玻璃中的Se被S原子逐渐替代后,玻璃的线性和三阶非线性折射率逐渐降低,玻璃光学带隙和激光损伤阈值不断升高.我们进一步利用拉曼散射光谱和高分辨率X射线光电子能谱研究导致这些物理性能变化的结构起源,通过分析玻璃中不同结构单元的演变过程,发现在这些玻璃网络结构中均以异极键(Ge—Se/S, As—Se/S)为主,且相对于Se而言, Ge和As优先与S结合成键.随着玻璃结构中S/Se比例的增加,与Se相关的化学键(Ge—Se,As—Se和Se—Se)数量逐渐减少, S相关化学键(Ge—S,As—S和S—S)数量逐渐增加,但这对玻璃的拓扑结构几乎没有影响.由此可以断定引起玻璃物理性质变化的主要原因是玻璃结构体系中各个化学键强度之间的差异.     

退火温度对a-Se0.70Ge0.15Sb0.15薄膜的结构和光学性质的影响

研究了退火温度对Se0.70Ge0.15Sb0.15薄膜的影响.通过热蒸发技术,在300K温度下将大块无定形Se0.70Ge0.15Sb0.1s沉积在石英和玻璃衬底上.研究发现,未经过退火处理的薄膜结构和在300K,1.33×10-5Pa下退火1小时后的薄膜结构都是无定形结构,而在同样气压470K温度下退火1小时的薄膜有结晶现象.通过在300 2 500nm范围内垂直入射光方向上透射率和反射率的测试,研究了薄膜的一些光学参数,如消光系数(k),折射系数(n)和吸收系数(a).研究发现,n和k同热处理温度有关.通过光学数据的分析,得到了不同条件下薄膜的间接带隙宽度(Enong),未经过热处理薄膜的Enong是1.715±0.021eV,300K下退火薄膜的Enong是1.643±0.021eV,470K下退火的Enong是1.527±0.021eV.退火温度降低了带隙宽度Enong,但增加了带尾eo这种效应可以根据Mott和Davis提出的多晶体系中态密度来解释.     

溅射气压对Ge2Sb2Te5薄膜光学常数的影响

实验研究了氩气气压对溅射制备的Ge2 Sb2 Te5 薄膜的光学常数随波长变化的影响 ,结果表明 :随薄膜制备时氩气气压的增加 ,Ge2 Sb2 Te5 薄膜的折射率n先增大后减小 ,而消光系数k先减小后增大。二者都随波长的变化而变化 ,且在长波长范围变化较大 ,短波长范围变化较小 ,解释了溅射气压对Ge2 Sb2 Te5 薄膜的光学常数影响的机理     

中红外色散平坦硫系光子晶体光纤设计及性能研究

本文以自制Ge20Sb15Se65硫系玻璃为基质材料,设计一种正八边形结构色散平坦型中红外硫系光子晶体光纤,并采用多极法对其中红外色散和传输特性进行数值研究.结果表明:控制该光纤占空比(d/Λ)在0.323—0.367之间,其色散及传输特性在3—5μm范围内可调.当孔间距Λ=3.4μm,孔直径d=1.1μm时,光纤在4.1—4.9μm波段的色散值在0.8—0.8 ps·nm 1·km 1波动,且具备单模低损耗传输(Loss0.049dB/m),小模场面积(Aeff8.46μm2)特性,适合于中红外非线性应用领域.     

Ⅰ型锗基笼合物Ba8Ga16-xSbxGe30的合成及热电性能

用高温熔融结合放电等离子烧结(SPS)方法合成了Sb掺杂的单相n型Ba8Ga16-xSbxGe30化合物,探索了Sb对Ga的取代对其热电性能的影响规律.研究结果表明随着Sb取代分数x的增加,Seebeck系数逐渐降低,Seebeck系数峰值对应的温度向低温方向偏移.电导率随着x的增加先增大后减小,当x=2时达到最大值.Sb取代Ga后对化合物的热性能有较大影响,其热导率和晶格热导率都有不同程度的降低.在所有n型Ba8Ga16-xSbxGe30化合物中,Ba8Ga14Sb2Ge30化合物的ZT值最大,在950 K左右其最大ZT值达1.1.     

Ge-As-S硫系玻璃的结构与性能调控

制备了系列具有不同化学配比特征的Ge-As-S硫系玻璃,并研究了玻璃的结构、折射率和光学带隙(Eg).Ge-As-S玻璃具有以[Ge S_4]四面体和[As S_3]三角锥为骨架结构单元相互交联形成的连续网络结构,当S过量时,结构中出现S链或S_8环;当S不足时,结构中形成As_4S_4/As_4S_3分子,甚至出现大量AsAs/Ge-Ge同极键.玻璃的组成元素在2—10μm波段的摩尔折射度分别为R_(Ge)=9.83—10.42 cm~3/mol,RAs=11.72—11.87 cm~3/mol和R_S=7.78—7.86 cm3/mol.Ge-As-S玻璃的折射率与密度和组成元素的摩尔折射度之间存在较好的定量关系,可根据该定量关系在1%偏差内对玻璃的折射率进行预测或调控.提出了采用玻璃粉末的漫反射光谱确定可靠Eg的方法,通过该方法可获得玻璃的强吸收数据用于确定Eg.Ge-As-S玻璃的Eg与玻璃的平均键能之间存在较好的关联,S含量较高的玻璃更倾向于具有较大的平均键能,因此具有较大的Eg.     

结合高分辨率X射线光电子能谱和拉曼散射研究GexGa8S92-x玻璃结构

本文在固定Ga原子含量为8%的情况下,结合高分辨率X射线光电子能谱和拉曼散射光谱对硫系玻璃Ge_xGa₈S_92-x(x=24%,26.67%,29.6%,32%和36%)的结构进行了研究.通过分析玻璃结构中各单元结构的演变情况,发现玻璃内部网络结构主要为S原子桥接GeS₄和GaS₄四面体结构.随着Ge含量的逐渐增大,S链状或环状结构单元迅速减少,并消失于Ge_26.67Ga₈S_65.33玻璃组分中;而类乙烷结构S₃Ge-GeS₃中的Ge—Ge同极键和S3Ge/Ga-Ga/GeS3结构中的M—M (Ge—Ge,Ga—Ga或Ge—Ga)同极键同时出现于Ge_29.6Ga₈S_62.4玻璃中,并且其结构数量随着Ge含量的增大而逐渐增加.由此可以判定,首先,在硫系玻璃Ge_xGa₈     

连续氢化法电感耦合等离子体发射光谱同时测定生物样品中痕量硒、砷、锡、锑

本文叙述用氢化法电感耦合等离子体发射光谱同时测定生物样品中痕量硒、砷、锡、锑的方法。比较了浓度为2.88mol/L,4.8mol/L和6.0mol/L的HCl对Se,As,Sn,Sb,Hg和Ge谱线强度的影响,也比较了NaBH_4溶液中VC对测定Se,As,Sb,Sn,Hg和Ge的影响。在4.8mol/L HCl浓度下,在1％NaBH_4溶液中加0.5％VC,HY-ICP-AES的检出限是:Se 0.3ng/ml,As 2.5ng/ml,Sn 5.0ng/ml,sb 0.4ng/ml,Hg 0.3ng/ml,Ge 8.0ng/ml。用国家标准物质GBW09101来检验本方法的准确性,得到的se,As,Sn和Sb结果良好。     

用低能电子衍射谱计算过渡金属吸附CO的表面结构

本文用低能电子衍射谱研究了CO分子吸附在过渡金属上的表面结构。     

在有限温度下运用弱测量保护量子纠缠

根据单量子比特的映射, 提出一个在有限温度下运用弱测量保护两量子比特纠缠的方案. 在两个可通过局域幺正变化实现的等价的初始纠缠进入广义振幅阻尼信道前后, 对其分别进行弱测量, 并对四个弱测量的参数做全面的优化, 获取最大共生纠缠C_r 和弱测量参数m, n的解析表达式, 然后再进一步研究弱测量参数与信道参数的关系. 发现这种基于弱测量的纠缠保护方法在某些情况下可以有效地提高纠缠, 甚至可以避免纠缠的突然死亡. 当信道参数r一定时, 对不同的参数p,初始态|ψ>纠缠达到最大值时对应的弱测量参数m的取值一样, 共生纠缠关于p=0.5对称, 而初始态|φ>对应的参数m的取值不同; 在参数p一定、参数r不同、初始态|ψ>或|φ>的情况下, 当纠缠度取最大值时, 弱测量参数m的取值不变, 且随着r的增加, 纠缠度减少. 通过对信道参数的分析, 发现可以选择合适的信道参数和初始态来获得较大的纠缠.     

An optimized fitting function with least square approximation in InAs/AlSb HFET small-signal model for characterizing the frequency dependency of impact ionization effect

An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of In As/Al Sb HFET, in which an optimized fitting function D(ωτ_i) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect.The enhanced model with D(ωτ_i) can accurately characterize the key S parameters of In As/Al Sb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D(ωτ_i) is helpful in further improving the modeling accuracy degree.     

O-乙基O-芳基N-异丙基硫代磷酰胺酯类化合物的除草活性与其31P化学位移的关系

本文测定了标题所示一类化合物的³¹P的化学位移,并讨论了它与取代基电子性间存在如下的关系δP=-0.9193σ+3.5891F+66.5385提出了³¹P化学位移与此类化合物的除草活性间存在一定的相关性,其关系如下PI₅₀=-0.9025π²+0.9017π-0.5600E_s-0.1620△δP+0.8445I+4.2514并对此关系的适用性及存在偏差作了初步讨论。     

光解苯半醌自由基的CIDEP谱

用高时间分辨ESR谱仪实验给出了光解对苯醌产生的苯半醌自由基的CIDEP发射谱.用三重态机理,同时考虑了自由基对机理的影响,从理论上分析了极化强度,计算出了增强因子V(Ⅰ)=-0.66,V(R)=0.2,一级反应速率k_1,A=0.05/μs,二级反应速率β=0.02/μs,横向和纵向弛豫时间T₁≈T₂=2.3μs.     

Infrared reflectivity and dielectric permeability of ultra-thin Cu and Al films

In this report we present an experimental investigation of the reflectivity (R) and the dielectric permeability () for Cu and Al ultra-thin films ranging in thickness from a few monolayers to 12 nm at infrared and visible wavelengths. The metal films were prepared by RF-sputtering on SiO₂ (glass) and Si substrates. IR reflectivity was measured at 9.2 μm, while was measured with the help of laser ellipsometer at a wavelength of 632.8 nm. Two types of oscillations on R(d) and (d) were discovered for two thickness regions determined by the critical thickness value d*. Oscillations at d<d* with periods near 0.3 nm for Al and Cu films were observed on R(d) and (d) due to quantum sized effects (QSEs). At d>d* (thickness between 6–12 nm) we discover a new type of strong oscillation of R(d) and (d) with an oscillating period of 0.2 nm. For thickness larger than 12 nm all the oscillations tend to disappear and R and behave almost as their volume values. A possible explanation for the appearance of these two kinds of oscillations is based on the introduction of the critical film thickness d*.     

Degradation of β-Ga_2O_3 Schottky barrier diode under swift heavy ion irradiation

The electrical characteristics and microstructures of β-Ga_2 O_3 Schottky barrier diode(SBD) devices irradiated with swift heavy ions(2096 Me V Ta ions) have been studied. It was found that β-Ga_2 O_3 SBD devices showed the reliability degradation after irradiation, including turn-on voltage Von, on-resistance Ron, ideality factor n, and the reverse leakage current density Jr. In addition, the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5 × 10~6–1.3 × 10~7 cm~(-1). Latent tracks induced by swift heavy ions were observed visually in the whole β-Ga_2 O_3 matrix. Furthermore, crystal structure of tracks was amorphized completely. The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration. Eventually,these defects caused the degradation of electrical characteristics of the devices. In terms of the carrier removal rates, theβ-Ga_2 O_3 SBD devices were more sensitive to swift heavy ions irradiation than Si C and Ga N devices.     

Improvement in coercivity,thermal stability,and corrosion resistance of sintered Nd-Fe-B magnets with Dy_(80)Ga_(20) intergranular addition

To investigate the coercivity,corrosion resistance,and thermal stability of Nd-Fe-B magnets,their properties were investigated at room and high temperature before and after doping with Dy_(80)Ga_(20)(at.%) powder.The coercivity of the magnets increased from the undoped value of 12.72 kOe to a doped value of 21.44 kOe.A micro-structural analysis indicates that a well-developed core-shell structure forms in the magnets doped with Dy_(80)Ga_(20) powder.The improvement in magnetic properties is believed to be related to the refined and uniform matrix grains,continuous grain boundaries,and a hardened(Nd,Dy)_2Fe_(14)B shell surrounding the matrix grains.Additionally,the doped magnets exhibit an obvious improvement in thermal stability.For the magnets with added Dy_(80)Ga_(20) powder,the temperature coefficients of remanence(α) and coercivity(β) increased to-0.106%℃~(-1) and-0.60%℃~(-1) over the range 20-100 ℃,compared to temperature coefficients of-0.117%℃~(-1)(α) and-0.74%℃~(-1)(β) in the regular magnets without Dy_(80)Ga_(20) powder.The irreversible loss of magnetic flux(Hirr) was investigated at different temperatures.After being exposed to 150 ℃ for 2 h,the Hirr of magnets with 4 wt.%Dy_(80)Ga_(20) decreased by ~95%compared to that of the undoped magnets.The enhanced temperature coefficients and Hirr indicate improved thermal stability in the doped Nd-Fe-B magnets.The intergranular addition of Dy_(80)Ga_(20) also improved the corrosion resistance of the magnets because of the enhanced intergranular phase.In a corrosive atmosphere for 96 h,the mass loss of the sintered magnets with 4 wt.%Dy_(80)Ga_(20) was 2.68 mg/cm~2,less than 10%of that suffered by the undoped magnets(28.1 mg/cm~2).     

基于介质环形柱结构的二维光子晶体中Dirac点的实现

利用偶然简并方法在二维正方格子介质环形柱结构光子晶体中成功实现了Dirac点, 并利用平面波展开法对实现Dirac点的过程进行了研究. 研究结果表明, 对于二维正方格子介质环形柱结构光子晶体, 在一定的外径R_O范围内(0.37a<R_O<0.5a), 当Dirac点存在时(n>1.4), 介质环内径R_I与外径R_O满足一个不随介质环折射率n变化的恒定关系式. 同时, Dirac点对应的光子约化频率f随折射率n及外径R_O的增大而减小. 利用所得的关系式对特定介质环折射率n条件下能实现Dirac点的环形光子晶体进行了预判设计.     

Crystal growth and characterisation of new organic nonlinear optical materials: 6-cyano and 6-nitro-2,2-dimethyl-3,4-epoxychroman

Two chiral organic nonlinear optical materials, (3S,4S)-(−)-6-cyano-2,2-dimethyl-3,4-epoxychroman (1) and (3R,4R)-(+)-6-nitro-2,2-dimethyl-3,4-epoxychroman (2), have been grown into single crystals of cm³-size. Although both compounds crystallise in the orthorhombic P2₁2₁2₁ space group, they are not isomorphous and their crystal packings are quite different. Angle tuned type II phase-matched second harmonic generation between 0.8 and 1.064 μm has been evidenced, with effective nonlinear coefficients d_eff of 1 and 5 pm/V at 0.96 μm for 1 and 2, respectively. These values are in agreement with those estimated in the oriented gas model approximation using EFISH first order hyperpolarisability values (β₀=2.6 and 4.0×10⁻³⁰ esu for 1 and 2, respectively).