惯性约束聚变靶中硅支撑冷却臂的制备

论述了基于反应离子深刻蚀技术加工惯性约束聚变（ICF）靶的硅支撑冷却臂。利用扫描电子显微镜、白光干涉仪和视觉显微系统等对所制备的硅支撑冷却臂的形貌、侧壁陡直度和卡爪径向形变量等参数进行了表征分析。分析结果表明，硅支撑冷却臂的侧壁陡直度大于88，卡爪径向形变量大于20 m，符合靶的设计要求。     

急冷条件下Cu-Pb偏晶合金的相分离研究

研究了Cu-Pb偏晶合金的急冷快速凝固和组织形成规律，并通过将金属熔体的热传导方程和Navier-Stokes方程相耦合, 理论分析了合金熔体的冷却速率、液固相变时间等物理参量与液相分离之间的相关性. 研究结果表明，在急冷快速凝固条件下，熔体的快速冷却对偏晶合金组织形成的影响要比熔体内部液相流动的影响更为显著. 快速凝固使液相分离受到抑制，Cu-Pb偏晶合金均可获得均匀的微观组织结构. 随着冷速的增大，晶粒尺寸明显减小，凝固组织显著细化，晶体形态由粗大枝晶向均匀细小的等轴晶过渡. 提高冷却速率，缩短液固相变时间是重力场中抑制液相分离、获得均匀偏晶组织结构的重要条件. 关键词： 偏晶合金 快速凝固 液相分离 微观结构     

溶液法铝诱导晶化制备多晶硅薄膜

采用铝（Al）盐溶液作为诱导源进行了非晶硅晶化成多晶硅的研究.光学显微镜观测与Raman光谱分析表明,合适配比的铝盐溶液能够将非晶硅予以诱导晶化.采用剥层XPS测试分析,探究了Al盐溶液与硅表面可能的化学反应以及随之发生的硅-铝层交换的过程.最后对溶液法诱导晶化的机理进行了讨论. 关键词： 铝诱导晶化 多晶硅薄膜 溶液法     

(001)面任意方向单轴应变硅材料能带结构

首先计算了(001)晶面单轴应变张量,在此基础上采用结合形变势理论的K ·P微扰法建立了在(001)晶面内受任意方向的单轴压/张应力作用时,应变硅材料的能带结构与应力(类型、大小)及晶向的关系模型,进而分析了不同单轴应力(类型、大小)及晶向对应变硅材料导带带边、价带带边、导带分裂能、价带分裂能、禁带宽度的影响.研究结果可为单轴应变硅器件应力及晶向的选择设计提供理论依据. 关键词： 单轴应变硅 K ·P法 能带结构     

点火靶半腔套装实验系统设计

根据美国NIF点火基准靶REV4.0要求,对半腔套装工艺进行了具体的参数分析,确定了半黑腔与冷冻罩的铝套筒过盈配合公差带等关键参数,制定了装配系统技术指标,设计了系统方案,研制了实验样机。该样机具有12个电控台,重复定位精度达到0.3μm和0.01°,并配备激光测头和6轴微力传感器,对靶件姿态与套装过程中的受力情况进行检测,可完成半黑腔套入与入射孔衬垫装配两道工序。利用该样机对模拟靶件进行了装配实验,半黑腔与铝套筒同轴度为8μm,轴向与径向夹角优于0.5°,验证了装配工艺与系统功能的有效性。     

700℃退火下铝调制镍硅锗薄膜的外延生长机理

文章研究了在700℃退火下,铝插入层调制镍和硅锗合金反应形成单相镍硅锗化物的生长机理.透射电镜测试结果表明,镍硅锗薄膜和硅锗衬底基本达到赝晶生长;二次质谱仪和卢瑟福沟道背散射测试结果表明,在镍硅锗薄膜形成的过程中,铝原子大部分移动到镍硅锗薄膜的表面.研究结果表明,铝原子的存在延迟了镍和硅锗合金的反应,镍硅锗薄膜的热稳定性和均匀性都得到了提高.最后,基于上述实验结果给出了铝原子调制形成外延镍硅锗薄膜的生长机理.     

毫秒脉冲激光辐照硅基PIN的温度场应力场数值分析

为了研究毫秒脉冲激光辐照硅基PIN多层结构产生的温度场和应力场的特点,本文基于热传导理论和弹塑性力学理论,利用等效比热容法处理相变潜热,考虑多个热源,尤其是底层铝电极反射的影响,并考虑硅基PIN探测器每层材料参数的非线性影响,采用有限元模拟软件COMSOL Multiphysics,对毫秒脉冲激光辐照硅基PIN多层结构的过程进行了二维数值模拟,得到了材料表层及内部各层的瞬态温度场与应力场的时空分布和变化规律.结果表明,底层铝电极对激光的反射,使得在底层铝电极处及附近硅层的温度都略有升高.在此基础上,分析了毫秒脉冲激光辐照硅基PIN的硬破坏机理,即熔融前力学损伤导致硅基PIN探测器的功能失常.     

镨铁硼低温波荡器机械结构的传热分析

对镨铁硼材料在低温和室温下的热学和力学物性进行了测量;使用实测的镨铁硼物性并结合数值模拟的方法对镨铁硼低温波荡器的传热特性进行了分析;结果表明,磁极和磁极夹持机构与磁铁间的热传导是冷却磁铁的关键因素,冷却管道宜采用双通道同向并联的方式。使用该设计通过液氮可以冷却磁铁至82K,同时能够控制由于温差带来的磁极间相位误差小于0.1度,满足镨铁硼低温波荡器设计要求。     

螺旋线慢波结构夹持性能测试方法研究

提出了一种由螺旋线慢波结构热分布特性来获知其夹持性能的方法. 设计了基于光纤光栅和热电偶的分布式温度测试平台, 计算和分析了光纤光栅等测温元件对慢波结构散热特性的影响. 搭建了实验系统, 研制了分布式微型光纤光栅温度传感阵列, 并对某型X波段行波管慢波结构进行对比测试. 结果表明, 实验获得的温差曲线可准确判别慢波结构夹持性能的优劣, 且不破坏器件结构与性能. 关键词： 慢波结构 夹持特性 散热能力 光纤光栅传感阵列     

相变域硅薄膜材料的光稳定性

采用RF-PECVD技术，通过改变反应气体的硅烷浓度制备了一系列不同晶化率不掺杂的硅薄膜材料，研究了工艺变化对材料结构的影响及材料光电特性同微结构的关系.随后进行了光衰退试验，在分析光照前后光电特性变化规律的基础上，认为材料中的非晶成分是导致材料光电特性衰退的主要原因.在靠近过渡区非晶一侧的硅材料比普通非晶硅稳定，衰退率较少；高晶化率微晶硅材料性能稳定，基本不存在光衰退；在靠近过渡区微晶一侧的硅材料虽然不是完全不衰退，但相比高晶化率硅材料来说更适合制备高效微晶硅电池. 关键词： 射频等离子体增强化学气相沉积 硅薄膜 Staebler-Wronski(SW)效应 稳定性     

Experimental study of temperature and clamping force during Nd:YAG laser butt welding

During welding, a high quality clamping device not only holds workpieces firmly together, but should also take the thermal strain of the welding heat without undermining the strength of the weld joint, inducing any excessive distortions, misalignment of workpieces or reducing the weld joint strength. This paper studies the clamping force during laser butt welding of steel workpieces. The clamping force and welding temperature for a butt welded joint during laser welding are measured simultaneously. The preset clamping force is varied during welding for different thicknesses of workpieces and weld joint strengths. The thermal expansion, cooling contraction, and workpiece width reduction during welding induce variations in the preset clamping force and consequently change the weld joint strength. Our study also reveals that there is an optimal preset clamping force that improves the weld joint strength significantly and the welding temperature during steady welding process remains unchanged for any preset clamping force.     

不良导体导热系数与温度关系研究

采用稳态平板法测量不良导体的导热系数时,关键是得到稳态时不良导体的传热速率。根据稳态时传热速率与散热铝盘的散热速率相等,可以测定自然冷却过程中,稳态时散热铝盘温度T2所对应的冷却速率。基于Matlab软件,分析并绘制曲线直观反映出温度、时间、冷却速率三者之间的关系,用拟合法研究了不良导体导热系数随温度变化的关系。     

Effects of controllable process factors on Al rear surface bumps in Si solar cells

High efficiency solar cells require good back surface field passivation and high back reflectance in the rear Al region. In module processes, wafer-based solar cell can break through stress during soldering uneven rear aluminum surfaces - a serious problem that affects throughput. This work examined rear surfaces with respect to controllable process factors such as ramping and cooling rates during rapid thermal processing, and the fineness of aluminum powder used in the screen-printed paste. A faster ramp up rate resulted in a uniform temperature gradient between the aluminum and silicon surfaces. As a results, the bumps on the aluminum surface were small and of high density. Fine aluminum metal powder in the paste for screen-printing contact points resulted in large distribution, high density bumps. Bumps formed during cooling in metallization, their sizes and densities were dependent the on uniformity of the aluminum and silicon liquid wetting of the silicon surface.     

Thermal effects on laser-ablated particle velocities from thin film targets

The thermal history of the target surface on the plume dynamics was studied by high-speed streak photography. A thin aluminum layer was deposited on a thick substrate material. By choosing substrate materials with different thermal conductivity, it is possible to control the heat flux inside the target material, which in turn controls the particle ejection process. In all the experimental conditions tested, the plume was found to have two different velocity clouds. By a series of experiments with different substrate materials, their velocities were shown to depend on the substrate material. The heat conduction equation was solved to simulate the temperature history of the target materials. The result was discussed with those from streak photography and burn patterns, showing an appreciable dependence on the heat conductivity of the material.     

Thermal parameters of layers and interfaces in silicon-on-diamond structures

The heat propagation at room temperature was studied in a heterostructure consisting of a polycrystalline diamond film deposited from a hydrocarbon plasma on an oriented silicon substrate. The dynamics of cooling of a thin-film indium thermometer evaporated atop the diamond film was measured following its heating by nanosecond nitrogen laser pulses. The experimental data were compared with the values calculated in the framework of the theory of thermal conductivity for multilayer systems. This analysis permitted the determination of both the thermal conductivity of the diamond film and the thermal resistance of the diamond/Si and In/diamond interfaces.     

Window materials for high power gyrotron

The room temperature application of sapphire as window material at higher frequencies is not feasible since its absorption coefficient increases almost linearly with increasing frequency in the millimeter wavelength region. At cryogenic temperature the absorption coefficient value decreases only by a few factors (factor of 2 to 3) in the 90 – 200 GHz region. The earlier reported temperature squared dependence (decrease) in the absorption coefficient or the loss tangent value is totally absent in our broad band continuous wave data we are reporting here (at 6.5 K, 35K, 77K and 300K) and one we reported at conferences earlier. Our results are verified by another technique. We utilize our precision millimeter wave dispersive Fourier transform spectroscopic techniques at room temperature and at cryogenic temperatures The extra high resistivity single crystal compensated silicon is no doubt the lowest loss material available at room temperature in the entire millimeter wavelength region At higher millimeter wave frequencies an extra high resistivity silicon window or an window made with extra high resistivity silicon coated with diamond film would certainly make a better candidate in the future. A single free standing synthetic diamond window seems to have higher absorption coefficient values at millimeter wavelength region at this time although it is claimed that it possesses good mechanical strength and higher thermal conductivity characteristics. It certainly does not rule out the use of diamond film on a single crystal high resistivity silicon to improve its mechanical strength and thermal conductivityThis research program was supported by the U.S. Department of Energy, Office of Fusion Research. Authors acknowledge the loan of a synthetic diamond specimen from Dr. Kevin Gray of Norton Diamond Company     

LNG船用超低温截止阀的低温试验瞬态特性研究

应用有限元分析软件ANSYS,对通径为DN80的LNG船用超低温截止阀低温试验状态进行了瞬态降温过程中温度的模拟与热力分析。分别对填料函温度以及阀门其他部分温度进行详细的研究分析,从而判定所设计的阀门阀颈长度是否合理,以及达到稳定状态时所需要的时间,并提出了一些建议。为超低温截止阀的结构设计提供了理论指导。     

Thermal conductivity of bio-SiC and the Si embedded in cellular pores of the SiC/Si biomorphic composite

The thermal conductivity of bio-SiC, a heavily defected material with specific cellular pores (channels), was studied in the temperature range 5–300 K. The bio-SiC sample was prepared from the SiC/Si biomorphic composite through the chemical removal of silicon. The thermal conductivity of silicon embedded in cellular pores of the SiC/Si biomorphic composite was determined.     

高压热处理对铝青铜热物理性能的影响

在5 GPa压力下对铝青铜进行750℃、保温15 min的高压热处理,对高压热处理前后铝青铜的电导率以及25～600℃温度范围内的热扩散系数、热容和热导率进行测试,结合显微组织的观察结果,探讨了高压热处理对铝青铜热物理性能的影响。研究表明:高压热处理能增大铝青铜的热扩散系数,减小热容;对热导率而言,温度低于400℃时高压热处理能增大铝青铜的热导率,而温度高于400℃时高压热处理能减小铝青铜的热导率。分析认为,产生变化的主要原因是高压热处理使铝青铜的微观组织发生了变化。     

Experimental and numerical study of the effect of conjugate heat transfer on film cooling

Combined convection heat transfer and thermal conduction for film cooling of a flat plate with 45° ribs on one wall was investigated experimentally and numerically. The flat plate surface temperature was measured using thermochromic liquid crystals. The results show that the film cooling is the main mechanism for the local cooling with a very low thermal conductivity while the convection heat transfer of the coolant in the coolant channel is the dominant heat transfer mechanism for the high thermal conductivity plate, with both film cooling and convection heat transfer by the coolant being important with medium thermal conductivity walls.