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介绍了一种基于溶液的廉价制备Al诱导晶化多晶硅薄膜的方法. 先以低压化学气相沉积(LPCVD)方法制备50 nm厚的非晶硅(amorphous silicon, a-Si)薄膜作为前驱物, 通过旋涂的方法, 将含有Al的盐溶液涂覆在a-Si薄膜表面, 550-620 ℃下氮气氛围退火若干小时得到多晶硅薄膜. 文中针对化学诱导源的种类、前驱物表面状况对晶化效果的影响进行了研究. 发现只有反应生成物中含有偏铝酸根(AlO-2)的碱性溶液才能发生诱导晶化, 而若Al溶液浓度过低, 则不能得到连续的多晶硅薄膜. a-Si表面若附有薄氧化层会有利于Al盐溶液在表面上的粘附以及得到大尺寸的晶粒, 然而又会增高退火晶化所需要的温度. 同时溶液在薄膜表面的粘附状况还会受到溶液中存在的其它离子的影响. 因此必须选用合适的实验条件. 相似文献
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The mechanism of hydrogen plasma passivation for poly-crystalline silicon (poly-Si) thin films is investigated by optical emission spectroscopy (OES) combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in polySi. The Ha with lower energy is mainly responsible for passivating the solid phase crystallization (SPC) poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition (PECVD). The H* with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, Hβ and H7 with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited bv low pressure chemical vapor deposition(LPCVD) 相似文献
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