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We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films. 相似文献
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Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing 下载免费PDF全文
Solid reactions between Ni and relaxed Si0.7Ge0.3 substrate were systematically investigated with different Al interlayer thicknesses. The morphology, composition, and micro-structure of the Ni germanosilicide layers were analyzed with different annealing temperatures in the appearance of Al. The germanosilicide layers were characterized by Rutherford backscattering spectrometry, cross-section transmission electron microscopy, scan transmission electron microscopy, and secondary ion mass spectroscopy. It was shown that the incorporation of Al improved the surface and interface morphology of the germanosilicide layers, enhanced the thermal stabilities, and retarded the Ni-rich germanosilicide phase to mono germanosilicide phase. With increasing annealing temperature, Al atoms distributed from the Ni/Si0.7Ge0.3 interface to the total layer of Ni2Si0.7Ge0.3, and finally accumulated at the surface of NiSi0.7Ge0.3. We found that under the assistance of Al atoms, the best quality Ni germanosilicide layer was achieved by annealing at 700 ℃ in the case of 3 nm Al. 相似文献
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文章研究了在700℃退火下,铝插入层调制镍和硅锗合金反应形成单相镍硅锗化物的生长机理.透射电镜测试结果表明,镍硅锗薄膜和硅锗衬底基本达到赝晶生长;二次质谱仪和卢瑟福沟道背散射测试结果表明,在镍硅锗薄膜形成的过程中,铝原子大部分移动到镍硅锗薄膜的表面.研究结果表明,铝原子的存在延迟了镍和硅锗合金的反应,镍硅锗薄膜的热稳定性和均匀性都得到了提高.最后,基于上述实验结果给出了铝原子调制形成外延镍硅锗薄膜的生长机理. 相似文献
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