2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

自旋玻璃锰氧化物La0.67Ca0.33(Mn,Fe)O3中的分步磁化和超大磁电阻

在Mn位替代钙钛石氧化物La_0.67Ca_0.33(Mn,Fe)O₃中观察到分步磁化现象,并在临界场附近获得大于10⁴%的超大磁电阻效应.指出自旋玻璃相中反铁磁团簇在外磁场下的熔化是分步磁化的物理起因.     

CO2对Ba0.5Sr0.5Co0.8Fe0.2O3−δ表面氧交换的影响

采 用 了 一 种 新 的 脉 冲 同 位 素 交 换 技 术 , 研 究了CO₂对Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3?δ(BSCF)的表面氧交换动力学的毒害作用．当BSCF暴露于CO₂时,由于在材料表面形成了碳酸盐,其表面交换率严重降低．在低CO₂浓度(1%)时,毒害作用从375 oC开始,并且随着温度的上升而变得更加明显．同时,表面交换动力学的下降导致BSCF在CO₂条件下氧渗透性能快速下降．     

ECR-PECVD制备Si3N4薄膜的光学特性研究

本文研究了ECR-PECVD制备的Si₃N₄薄膜的光学特性.得到的Si₃N₄薄膜具有光致发光效应,在280℃沉积制备的Si₃N₄薄膜的光致发光波长为400nm,具有较好的单色性.测试分析了Si₃N₄薄膜对可见光、红外光具有较高的透射性能,Si₃N₄薄膜可作为红外光的增速减反射膜.     

La0.67Sr0.33MnO3薄膜光响应特性研究

实验测量了在不同温度和电场下,超巨磁电阻CMR(colossal magnetoresistance)薄膜材料La_0.67Sr_0.33MnO₃(LSMO)的光响应特性.发现样品被激光照射后,具有光诱导电阻变化的特性.在温度小于居里点Tc时,电阻随温度升高而增大,在Tc以上时,电阻则随温度升高而减小.通过对样品的光脉冲响应和偏置电场的关系分析,可认为其光响应特性的机理与激光激励下引起的自旋系统变化有关.     

锰位铁掺杂La0.67Sr0.33FexMn1-xO3薄膜的光诱导效应

分别采用溶胶-凝胶法和脉冲激光沉积的方法制备了La_067Sr_033Fe_xMn_1-xO₃(x=0, 005, 010, 015)系列块材和薄膜，研究了Fe部分替代对La_067Sr_033Fe_xMn_1-xO₃薄膜     

La0.67Ca0.33MnO3单晶中Fe的掺杂提高本征磁电阻率和激活能的研究

La_0.67Ca_0.33MnO₃ and La_0.67Ca_0.33Mn_0.96Fe0.04O₃单晶的磁性和磁电阻特性。由于缺少晶粒间界，磁场对于自旋涨落的抑制作用更加明显，所以单晶中的磁电阻率比多晶的提高了两个数量级。通过Fe的掺杂，在40×10⁵A/m的磁场下，磁电阻率从3400%进一步提高到了17600%。通过对居里温度以上电阻率的小极化子模型拟和的结果，我们看到随着Fe的掺杂，激活能被提高。磁极化子激活能的增大可以更加局域电子，这可能是在Fe掺杂单晶中本征磁电阻率进一步提高的主要原因。     

脉冲激光沉积制备的Co80Cr20/Ti90Cr10薄膜的结构与磁性

用脉冲激光沉积(PLD)的方法在硅单晶基片上制备了Ti₉₀Cr₁₀和Co₈₀Cr₂₀/Ti₉₀Cr₁₀薄膜，用XRD研究了Ti₉₀Cr₁₀薄膜的晶体结构与制备温度的关系，结果表明随着温度升高，薄膜从非晶态逐步向晶态转化，并且计算了Ti₉₀Cr₁₀薄膜的晶粒大小以及晶格常数. 利用透射电镜对Ti₉₀Cr₁₀薄膜进行了表面和截面形貌的表征. 采用纳米压痕仪对Ti₉₀Cr₁₀薄膜的硬度和膜基界面结合力进行了分析，表明薄膜的硬度和膜基结合力随制备条件改变有所变化，制备温度增加，薄膜的硬度和膜基结合力随之增加. 利用Ti₉₀Cr₁₀薄膜作为中间层，用PLD制备了Co₈₀Cr₂₀磁性层，获得了很好的垂直磁化性质，膜厚减小，矫顽力和矩形比有所增加，600℃真空条件下制备的Co₈₀Cr₂₀(8 nm)/Ti₉₀Cr₁₀(14 nm)薄膜的矫顽力为65.25 kA/m，矩形比为0.86，并且讨论了Co₈₀Cr₂₀/Ti₉₀Cr₁₀薄膜的磁化性质.     

脉冲激光沉积温度及氧压对Bi2Sr2Co2Oy热电薄膜晶体结构与电输运性能的影响

利用脉冲激光沉积技术在c-Al₂O₃单晶基片上制备了Bi₂Sr₂Co₂O_y热电薄膜并研究了沉积温度和氧压对薄膜晶体结构及电输运性能的影响.在最佳沉积条件下制备的单相、c轴取向的Bi₂Sr₂Co₂O_y薄膜的室温电阻率ρ和塞贝克系数S分别为2.9mΩ/cm和110μupV/K,其功率因子S²/ρ好于在单晶样品上得到的值.此外,该薄膜在低温下表现出较强的负磁阻效应,在2K,9T时达到了40%.     

Pd/Ag掺杂的La0.67(Ca0.65Ba0.35)0.33MnO3体系电特性和磁电阻增强效应

系统研究了xAg-La_0.67(Ca_0.65Ba_0.35)_0.33MnO₃和xPd-La_0.67(Ca_0.65Ba_0.35)_0.33MnO₃(xAg-LCBMO和xPd-LCBMO)两种复合体系的电特性和磁电阻特性. 结果发现,Pd和Ag的掺杂都引起电阻率的大幅降低和峰值电阻率温度的升高,这主要源于晶粒边界/表面良导体金属晶粒的析出. 另外,Pd和Ag的掺杂都引起室温磁电阻的大幅增强. 尤其是27%摩尔比的Ag掺杂诱导了高达70%的室温磁电阻,几乎是未掺杂母体LCBMO的10倍,而27%摩尔比的Pd掺杂诱导产生了更高的磁电阻,约170%. 磁电阻的大幅增强,与良导体金属掺杂引起的样品电阻率的降低有关. 另一方面,晶粒表面/边界Mn离子与Pd离子接近诱导Pd离子的自旋极化对磁电阻的增强起了重要的促进作用.     

La0.33Pr0.34Ca0.33MnO3薄膜的应变效应

采用脉冲激光沉积法分别在(100)LaAlO₃和(100)SrTiO₃基片上生长了La_0.33Pr_0.34Ca_0.33MnO₃薄膜,并通过磁测量和电输运测量对生长在不同基片上的La_0.33Pr_0.34Ca_0.33MnO₃薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La_{关键词： 钙钛矿锰氧化物 相分离 电荷有序}     

Ti/Pr0.7Ca0.3MnO3/La0.67Sr0.33MnO3/Pt异质结电致电阻效应的改善

采用脉冲激光沉积技术制备了Ti/Pr_0.7Ca_0.3MnO₃/Pt和Ti/Pr_0.7Ca_0.3MnO₃/La_0.67Sr_0.33MnO₃/Pt异质结并研究了La_0.67Sr_0.33MnO₃功能插层对异质结电致电阻特性的影响. 实验结果表明La_0.67Sr_0.33MnO₃功能层的引入有效提高了器件的电阻转变特性,尤其是电阻转变率和疲劳性得到了极大的改善. 对La_0.67Sr_0.33MnO₃插层改善电致电阻转变特性的机理进行了定性的分析. 关键词： 电致电阻效应 电阻转变比率 疲劳特性     

Influence of microstructures on exchange bias behaviors of La0.7Sr0.3MnO3/La0.33Ca0.67MnO3 bilayers

Ferromagnetic La_0.7Sr_0.3MnO₃ (LSMO) and antiferromagnetic La_0.33Ca_0.67MnO₃ (LCMO) layers were grown on SrTiO₃ (STO) substrates by the pulsed laser deposition technique. LSMO films had rougher surfaces and larger grain sizes than LCMO films. Fully strained bilayers, in which each layer was as thin as 10 nm, were prepared by changing their stacking sequences, i.e. LSMO/LCMO/STO and LCMO/LSMO/STO. The former had higher T_C (350 K) than the latter (300 K), and exchange bias effects were only observed in the former bilayers. This revealed that microstructures could play an important role in the transport and magnetic properties of manganese oxide thin films.     

Magnetoresistance and transport properties of different impurity doped La0.67Ca0.33MnO3 composite

An enhanced magnetoresistance and a two-fold effect result from impurity dopant were observed in composites of La_0.67Ca_0.33MnO₃/YSZ and La_0.67Ca_0.33MnO₃/Fe₃O₄. Where YSZ represents yttria-stabilized zirconia and the doping level of both YSZ and Fe₃O₄ is 1 mol%. Different electrical and magnetic transport properties, in particular a lower field magnetization behavior, were observed between pure La_0.67Ca_0.33MnO₃ and the impurity doped La_0.67Ca_0.33MnO₃ composites. Compared with pure La_0.67Ca_0.33MnO₃, a possible interpretation is presented by considering the influences of YSZ and Fe₃O₄ on the structure of grain boundaries and/or surfaces of La_0.67Ca_0.33MnO₃grains.     

Synthesis and enhanced low-field magnetoresistance in La0.67Ca0.33MnO3 /CuO composites

The (1−x)La_0.67Ca_0.33MnO₃+xCuO composites have been synthesized by a new liquid phase method. The XRD and SEM measurements reveal that little CuO is soluble in the structure of La_0.67Ca_0.33MnO₃ and is mainly distributed at the grain boundary of La_0.67Ca_0.33MnO₃. As CuO content x increases, the magnetization M values increase until x=0.05 and M values decrease when x further increases at low temperature. For x=0.10, 0.20 and 0.30 composites, double metal-insulator transitions accompanying a single ferromagnetic transition are observed. Large low-field magnetoresistance is achieved for the composites and the largest magnetoresistance appeared when x=0.20.     

Epitaxial growth La0.67Ca0.33MnO3 thin film by radio frequency sputtering method

Perfect epitaxial growth of La_0.67Ca_0.33MnO₃ (LCMO) thin film has been achieved on (1 0 0) LaAlO₃ (LAO) single crystal substrate by radio frequency sputtering method. X-ray diffraction (XRD) and electron diffraction analysis indicates that La_0.67Ca_0.33MnO₃ film grows epitaxially on LaAlO₃ along [1 0 0] direction of the substrate. The resistivity variation with temperature of the film shows a sharp metal to semiconductor transition peak around 253 K, which is close to that of the target. The magnetoresistance (MR) also reveals high quality epitaxy film characteristic at low temperatures and near the metal to semiconductor transition temperature.     

Ag掺杂的La0.67Pb0.33MnO3薄膜中激光感生热电电压效应

采用脉冲激光沉积法在倾斜LaAlO₃衬底上制备了Ag掺杂的La_0.67Pb_0.33MnO₃(LPMO)系列薄膜，发现该类薄膜中有激光感生热电电压(LITV)效应.随着掺Ag量x(x为Ag的质量与LPMO的质量之比)从0.00增加到0.10，LPMO薄膜中的LITV信号的响应时间先递减后递增，但始终小于未掺Ag的薄膜，掺Ag量x=0.06时响应时间最小.研究发现LPMO薄膜存在一个最佳厚度，在这一厚度下可使得LITV信号 关键词： 3薄膜')" href="#">LaPbMnO₃薄膜 激光感生热电电压 各向异性Seebeck系数 响应时间     

Magnetotransport properties of La0.67Ca0.33MnO3//La0.67Sr0.33MnO3 bilayers

The perovskite bilayers La0.67Ca0.33MnO3 （LCMO） （100 nm） / La0.67Sr0.33MnO3（LSMO） （100 nm） and LSMO （100 nm） / LCMO （100 nm） are fabricated by a facing-target sputtering technique. Their transport and magnetic properties are investigated. It is found that the transport properties between them are different obviously due to distinguishable structures, and the different lattice strains in both films result in the difference of metal-to-insulator transition. Only single-step magnetization loop appears in our bilayers from 5K to 320K, and the coercive force of LSMO/LCMO varies irregularly with a minimum ～ 2387A/m which is lower than that of LCMO and LSMO single layer films. The behaviour is explained by some magnetic coupling.     

Thickness dependence of electroresistance in La0.67Ca0.33MnO3 epitaxial films

The electroresistance (ER) of La_0.67Ca_0.33MnO₃ (LCMO) epitaxial thin films with different thicknesses was studied. For the 110 nm thick LCMO film, its ER shows a maximum at T_p, where the resistance shows a peak, and decreases to zero at lower temperatures. While for the 30 nm thick LCMO film, its ER is remarkable in a wide temperature range. Another interesting observation in this work is that the electric current can tune the magnetoresistance of the ultrathin LCMO thin film. The results were discussed by considering the coexistence of ferromagnetic metallic phase with the charge ordered phase, and the variation of the phase separation with film thickness and electric current. This work also demonstrates that electric current can tune the magnetoresistance of the manganites, which is helpful for their applications.     

Metastable structure and properties of (La0.73Bi0.27)0.67Ca0.33MnO3

The electrical transport and magnetic properties of high Bi doped (La_0.73Bi_0.27)_0.67Ca_0.33MnO₃ are studied at the temperature and magnetic field ranges from 10 to 300 K and 0 to 3 T. Significant temperature and magnetic field hystereses are observed in both resistivity and magnetization measurements. Meanwhile, an enhanced magnetoresistance effect, within a wide temperature window, is obtained in the (La_0.73Bi_0.27)_0.67Ca_0.33MnO₃. The hysteresis and enhanced magnetoresistance are discussed based on an inhomogeneous metastable structure related to the Bi dopant.