电子回旋共振等离子体技术

微波电子回旋共振是一种先进的低温等离子体技术，它具有优良的综合指标，提高了微电子，光电子集成电路制造工艺等应用领域中的低温等离子体加工水平，文章介绍了电子回旋共振等离子体产生原理，特点及重要的实验研究结果。     

脉冲调制射频功率测量中的标定及FFT分析方法研究

利用电压/电流探头和数字示波器实现了脉冲调制射频功率测量。电压/电流探头输出的电压、电流信号由数字示波器采集存储,电压、电流的幅值及相位差由FFT分析得到。在不同频率下,对电压、电流幅值及相位差进行标定,获得计算射频功率的标定参数。分析表明电压、电流相位差是影响标定系数的主要因素,FFT方法处理非稳态调幅电压、电流时存在问题,只有在零无功功率处才能获得可信的吸收功率。     

Characteristics of Microwave Discharge in a Modified Surfaguide with a Large Diameter

The characteristics of the microwave discharge are studied in a modified surfaguide with a large diameter. Ex-perimental results show that there exist three discharging modes, one is the plasma mode, and the others are the waveguide modes. The discharge can jump between one of the wavegudde modes and the plasma mode, and the corresponding hysteresis loop is influenced by the discharging pressure. In the higher pressure region, the hysteresis loop is wide enough so that the discharge in each mode is stable. In the middle pressure region, the discharge becomes unstable as a result of the hysteresis loop being sufficiently narrow. When the gas pressure is further decreased, the plasma mode disappears, while the mode jumps between the two wavegulde modes always appear and are stable in the discharge region we have explored.     

STUDY ON THE OPTICAL PROPERTIES AND HYDROGEN CONTENT OF THE SILICON NITRIDE THIN FILM

The Si₃N₄ thin films have been manufactured by electron cyclotron resonance plasma enhanced chemical vapour deposition technology on the KBr and (111) monocrystal Si sub-strates, The infrared optical properties of the Si₃N₄ film have been studied by analysing its IR spectrum. The results show that the Si₃N₄ film can be used as an antireflexion and an-tireflectiug film of Si surface, The H content of Si₃N₄ thin film has been estimated from the infrared absorption area. It is obtained that the H content of the Si₃N₄ film deposited on the KBr substrate is lower than that deposited on Si substrate, and it derceases with increasing deposition temperature. The Raman spectra of the Si₃N₄ film deposited at 360℃ has also been measured.     

等离子体高频不稳定性的高阻抗探针测量

采用高阻抗探针，测量了热电子等离子体的高频扰动，扰动频率与外磁场的关系及爆发区域匠实验观察表明，高频扰动为离子漂移回旋不稳定性。     

ECR-PECVD制备Si3N4薄膜沉积工艺的研究

由偏心静电单探针诊断了电子回旋共振等离子体增强化学汽相沉积(ECR-PECVD)反应室内等离子体密度的空间分布规律．结果表明在轴向位置Z=50cm处,直径Φ12cm范围内等离子体密度分布非常均匀．分析了等离子体密度径向均匀性对沉积速率均匀性和薄膜厚度均匀性的影响．讨论了沉积制备一定薄膜厚度的Si₃N₄薄膜的工艺重复性．研究了各种沉积工艺参数与Si₃N₄薄膜沉积速率的相互关系．得到了ECR-PECVD技术在沉积薄膜时的工 关键词：     

可调谐射频磁探针研究

提出了一种利用可调谐变压器提高磁探针灵敏度的方法。可调谐射频变压器采用在原线圈并联可变电容及在副线圈串联可变电容的结构,用平面分立式法拉第屏蔽抑制变压器原、副线圈间寄生的容性耦合。测量结果表明：在采用中心抽头变压器及法拉第屏蔽的情况下,磁探针的容性耦合大幅度降低;当调节并联或串联电容时,磁探针输出电压均出现共振现象;调节并联电容得到的共振输出电压高于调节串联电容时的对应值;在典型条件下,共振输出电压幅值比无可变电容磁探针提高了约一个量级。建立了探针电路模型,计算结果与测量结果符合较好。     

热电子、双离子成分对离子漂移迴旋不稳定性的影响

分析了热电子、温(热)离子成分对离子漂移迴旋不稳定性的影响。给出了临界稳定热电子成分值α与温(热)离子成分值、离子温度比和离子抗磁漂移速度的关系;讨论了热电子、温(热),冷离子成分对不稳定性各谐频分支的影响;分析了热电子成分稳定作用的物理机制。     

热电子与热离子共存时的电荷裸露效应

本文采用简晰的平板模型，在局域近似下讨论了热电子，热离子共存时它们对低频交换模的影响，分析了两种热成分电荷裸露效应的相互作用。     

Experimental study on parameters of dust plasma in SiH4/C2H4/Ar discharges

Measurements of dust plasma parameters were carried out in the discharges of （SiH4/C2H4/Ar） mixtures. Dust particles were formed in the capacitively coupled radio-frequency discharge of these reactive mixtures in a cylindrical chamber. Langmuir probe was employed for diagnosing and measuring the important plasma parameters such as electron density and electron temperature. The results showed that the electron density dropped, and in contrast the electron temperature rose when the dust particles formed. The curves of the electron density and temperature versus the RF power and pressure were presented and analysed. Further, it was found that the wriations of electron temperature and the size of dust void with the RF power followed the similar trends. These trends might be useful for understanding more about the characteristics of dusty voids.